WFU/D1 5 N1 0
Wisdom Semiconductor
N-Channel MOSFET
Features
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1. Gate{
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General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Symbol
VDSS
ID
3. Source
D-PAK, I-PAK
2
1
3
1
2
3
Tc=25℃ unless other wise noted
Parameter
WFU/D1 5N1 0
Units
100
V
-continuous (Tc=25℃)
15
A
-continuous (Tc=100℃)
11.5
A
±30
V
Drain-Sourse Voltage
Drain Current
2. Drain
{
Symbol
RDS(on) (Max 70mΩ )@VGS=10V
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
VGS
Gate-Sourse Voltage
EAS
Single Plused Avanche Energy
(Note1)
250
mJ
IAR
Avalanche Current
(Note2)
15
A
PD
Power Dissipation (Tc=25℃)
55
W
TJ,TSTG
Operating and Storage Temperature Range
-55 ~ +150
℃
TL
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
300
℃
Thermal Characteristics Symbol
RθJC
Parameter
Thermal Resistance,Junction to Case
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Typ.
Max
Units
--
2.27
℃/W
WFU/D1 5 N1 0
Wisdom Semiconductor
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100
110
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.2
1.8
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
-
56
70
mΩ
gFS
VDS=50V,ID=9A
12
-
-
S
-
1350
-
PF
-
240
-
PF
-
180
-
PF
-
13.8
-
nS
Off Characteristics
On Characteristics (Note 3)
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
VDS=25V,VGS=0V,
Crss
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
-
9.3
-
nS
td(off)
VGS=10V,RG=2.5Ω
-
43.8
-
nS
-
11.4
-
nS
-
31
-
6.4
-
nC
-
9.4
-
nC
-
-
1.2
V
-
17
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=3A,
VGS=10V
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=9A
Diode Forward Current (Note 2)
IS
-
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Wisdom Semiconductor
Test Circuit
1）EAS test Circuit
2）Gate charge test Circuit
3）Switch Time Test Circuit
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFU/D1 5 N1 0
ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
C Capacitance (pF)
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Package Dimensions
DPAK
0.89 ±0.10
MIN0.55
0.91 ±0.10
0.50 ±0.10
9.50 ±0.30
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(1.00)
(3.05)
(2XR0.25)
(0.10)
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
2.70 ±0.20
2.30 ±0.10
2.70 ±0.20
2.30TYP
[2.30±0.20]
(0.50)
6.10 ±0.20
MAX0.96
(4.34)
9.50 ±0.30
0.80 ±0.20
0.60 ±0.20
(0.50)
6.10 ±0.20
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
Package Dimensions
(Continued)
IPAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
0.50 ±0.10
16.10 ±0.30
6.10 ±0.20
0.70 ±0.20
(0.50)
9.30 ±0.30
MAX0.96
(4.34)
1.80 ±0.20
0.80 ±0.10
0.60 ±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters