QEE113 - Fairchild Semiconductor

QEE113
Plastic Infrared Light Emitting Diode
Features
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Description
λ = 940 nm
Package Type = Sidelooker
Chip Material = GaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Gray dot marking on the top side
The QEE113 is a 940 nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
Package Dimensions(1, 2)
0.175 (4.44)
0.087 (2.22)
0.050 (1.27)
Ø0.065 (1.65)
0.200 (5.08)
Ø0.095 (2.41)
0.500 (12.70)
MIN
CATHODE
ANODE
Schematic
0.020 (0.51) SQ.
(2X)
0.100 (2.54)
ANODE
CATHODE
0.030 (0.76)
0.100 (2.54)
NOM
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
© 2002 Fairchild Semiconductor Corporation
QEE113 Rev. 2.2
www.fairchildsemi.com
1
QEE113 — Plastic Infrared Light Emitting Diode
May 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
TOPR
Operating Temperature
-40 to +100
°C
TSTG
Storage Temperature
-40 to +100
°C
(4, 5, 6)
240 for 5 sec
°C
(4, 5)
TSOL-I
Soldering Temperature (Iron)
TSOL-F
Soldering Temperature (Flow)
260 for 10 sec
°C
IF
Continuous Forward Current
50
mA
VR
Reverse Voltage
5
V
100
mW
PD
(3)
Power Dissipation
Notes:
3. Derate power dissipation linearly 1.33 mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
λPE
Peak Emission Wavelength
TCλ
Temperature Coefficient
Conditions
IF = 20 mA
2Θ1/2
Emission Angle
IF = 100 mA
VF
Forward Voltage
IF = 100 mA, tp = 20 ms
TCVF
Reverse Current
VR = 5 V
Radiant Intensity
IF = 100 mA, tp = 20 ms
Temperature Coefficient
Rise Time
tf
Fall Time
Cj
Junction Capacitance
© 2002 Fairchild Semiconductor Corporation
QEE113 Rev. 2.2
Max.
nm
0.3
nm/°C
°
1.5
3
7.5
-0.7
IF = 100 mA
VR = 0 V
Unit
945
-2
lR
tr
Typ.
50
Temperature Coefficient
IE
TCIE
Min.
V
mV/°C
10
μA
12
mW/sr
%/°C
800
ns
800
ns
14
pF
www.fairchildsemi.com
2
QEE113 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
1.0
λPE – PEAK EMISSION WAVELENGTH
975
NORMALIZED INTENSITY
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
700
750
800
850
900
950
1,000
IF = 20mA DC
970
965
960
955
950
945
940
935
1,050
0
10
20
λ (nm)
Figure 1. Normalized Intensity vs. Wavelength
Ie – NORMALIZED RADIANT INTENSITY
Ie – NORMALIZED RADIANT INTENSITY
1
60
70
80
90
100
100
Normalized to:
IF = 20mA Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
1000
0
10
20
30
40
50
60
70
80
90
100
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
Figure 3. Normalized Radiant Intensity vs.
Forward Current
Figure 4. Normalized Radiant intensity vs.
Ambient Temperature
1.55
3.5
IF Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
VF – FORWARD VOLTAGE (V)
VF – FORWARD VOLTAGE (V)
50
1.4
Normalized to:
IF = 100mA Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
2.5
2.0
1.5
1.0
10
40
Figure 2. Peak Wavelength vs. Ambient Temperature
10
3.0
30
TA – AMBIENT TEMPERTURE (°C)
IF = 20mA Pulsed
tPW = 20ms
Duty Cycle = 4%
1.50
1.45
1.40
1.35
1.30
1.25
100
0
1000
Figure 5. Forward Voltage vs. Forward Current
© 2002 Fairchild Semiconductor Corporation
QEE113 Rev. 2.2
10
20
30
40
50
60
70
80
90
100
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
Figure 6. Forward Voltage vs. Ambient Temperature
www.fairchildsemi.com
3
QEE113 — Plastic Infrared Light Emitting Diode
Typical Performance Characteristics
90°
80°
70°
120°
60°
130°
50°
140°
40°
150°
30°
160°
20°
10°
170°
180°
1.0
IC (ON) – NORMALIZED COLLECTOR CURRENT
110°
100°
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0°
1.0
1.0
Normalized to:
d = 0 inch
IF Pulsed
tpw = 100μs
Duty Cycle = 0.1%
VCC = 5V
RL = 100Ω
TA = 25°C
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
LENS TIP SEPARATION (inches)
Figure 7. Radiation Diagram
© 2002 Fairchild Semiconductor Corporation
QEE113 Rev. 2.2
Figure 8. Coupling Characteristics
of QEE113 and QSE113
www.fairchildsemi.com
4
QEE113 — Plastic Infrared Light Emitting Diode
Typical Performance Characteristics (Continued)
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I74
© Fairchild Semiconductor Corporation
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