Data Sheet - Fairchild Semiconductor

FGH40N60SFDTU_F085
600 V, 40 A Field Stop IGBT
Features
General Description
•
•
•
•
•
•
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
High Current Capability
Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
High Input Impedance
Fast Switching
RoHS Compliant
Qualified to Automotive Requirements of AEC-Q101
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
VCES
VGES
Description
Ratings
Unit
Collector to Emitter Voltage
600
V
Gate to Emitter Voltage
20
Transient Gate-to-Emitter Voltage
30
@ TC = 25oC
Collector Current
IC
PD
A
@ TC =
100oC
40
A
Pulsed Collector Current
@ TC =
25oC
120
A
Maximum Power Dissipation
@ TC = 25oC
290
W
Collector Current
ICM (1)
80
V
Maximum Power Dissipation
@ TC =
100oC
116
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
Typ.
Unit
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RJC(IGBT)
Thermal Resistance, Junction to Case
0.43
oC/W
RJC(Diode)
Thermal Resistance, Junction to Case
1.45
oC/W
RJA
Thermal Resistance, Junction to Ambient
40
oC/W
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
1
www.fairchildsemi.com
FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
April 2015
Part Number
Top Mark
FGH40N60SFDTU_F085 FGH40N60SFD
Package Packing Method Reel Size Tape Width
TO-247
Electrical Characteristics of the IGBT
Symbol
Parameter
Tube
N/A
Quantity
N/A
30
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
-
0.6
-
V/oC
Off Characteristics
BVCES
TJ
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 250 A, VCE = VGE
BVCES
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.0
4.7
6.5
V
IC = 40 A, VGE = 15 V
-
2.3
2.9
V
IC = 40 A, VGE = 15 V,
TC = 125oC
-
2.5
-
V
-
1920
-
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
190
-
pF
-
65
-
pF
-
21
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
35
-
ns
td(off)
Turn-Off Delay Time
-
138
-
ns
-
18
54
ns
-
1.23
-
mJ
tf
Fall Time
Eon
Turn-On Switching Loss
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
Eoff
Turn-Off Switching Loss
-
0.38
-
mJ
Ets
Total Switching Loss
-
1.61
-
mJ
td(on)
Turn-On Delay Time
-
21
-
ns
tr
Rise Time
-
39
-
ns
td(off)
Turn-Off Delay Time
-
144
-
ns
tf
Fall Time
-
48
-
ns
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
Eon
Turn-On Switching Loss
-
1.58
-
mJ
Eoff
Turn-Off Switching Loss
-
0.58
-
mJ
Ets
Total Switching Loss
-
2.16
-
mJ
Qg
Total Gate Charge
-
121
-
nC
Qge
Gate to Emitter Charge
-
16
-
nC
Qgc
Gate to Collector Charge
-
68
-
nC
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
VCE = 400 V, IC = 40 A,
VGE = 15 V
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FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
IF = 20 A
FGH40N60SFDTU_F085 Rev.1.0
Typ.
Max
TC =
-
1.80
2.6
TC =
125oC
-
1.70
-
-
68
-
-
240
-
-
160
-
-
840
-
TC = 25oC
IF =20 A, diF/dt = 200 A/s
©2015 Fairchild Semiconductor Corporation
Min.
25oC
TC =
TC = 25oC
TC =
3
125oC
125oC
Unit
V
ns
nC
www.fairchildsemi.com
FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
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FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
Figure 12. Turn-on Characteristics vs.
Gate Resistance
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FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switching
SOA Characteristics
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
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www.fairchildsemi.com
FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
Figure 23.Transient Thermal Impedance of IGBT
PDM
t1
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
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t2
www.fairchildsemi.com
FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
Mechanical Dimensions
Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
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Rev. I74
©2015 Fairchild Semiconductor Corporation
FGH40N60SFDTU_F085 Rev.1.0
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FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT
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