FGH40N60SFDTU_F085 600 V, 40 A Field Stop IGBT Features General Description • • • • • • Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive Requirements of AEC-Q101 Applications • Automotive chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES Description Ratings Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage 20 Transient Gate-to-Emitter Voltage 30 @ TC = 25oC Collector Current IC PD A @ TC = 100oC 40 A Pulsed Collector Current @ TC = 25oC 120 A Maximum Power Dissipation @ TC = 25oC 290 W Collector Current ICM (1) 80 V Maximum Power Dissipation @ TC = 100oC 116 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Typ. Unit Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter RJC(IGBT) Thermal Resistance, Junction to Case 0.43 oC/W RJC(Diode) Thermal Resistance, Junction to Case 1.45 oC/W RJA Thermal Resistance, Junction to Ambient 40 oC/W ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 1 www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT April 2015 Part Number Top Mark FGH40N60SFDTU_F085 FGH40N60SFD Package Packing Method Reel Size Tape Width TO-247 Electrical Characteristics of the IGBT Symbol Parameter Tube N/A Quantity N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVCES TJ Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A Temperature Coefficient of Breakdown VGE = 0 V, IC = 250 A Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 A, VCE = VGE BVCES On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 4.7 6.5 V IC = 40 A, VGE = 15 V - 2.3 2.9 V IC = 40 A, VGE = 15 V, TC = 125oC - 2.5 - V - 1920 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz - 190 - pF - 65 - pF - 21 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 35 - ns td(off) Turn-Off Delay Time - 138 - ns - 18 54 ns - 1.23 - mJ tf Fall Time Eon Turn-On Switching Loss VCC = 400 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC Eoff Turn-Off Switching Loss - 0.38 - mJ Ets Total Switching Loss - 1.61 - mJ td(on) Turn-On Delay Time - 21 - ns tr Rise Time - 39 - ns td(off) Turn-Off Delay Time - 144 - ns tf Fall Time - 48 - ns VCC = 400 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 125oC Eon Turn-On Switching Loss - 1.58 - mJ Eoff Turn-Off Switching Loss - 0.58 - mJ Ets Total Switching Loss - 2.16 - mJ Qg Total Gate Charge - 121 - nC Qge Gate to Emitter Charge - 16 - nC Qgc Gate to Collector Charge - 68 - nC ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 VCE = 400 V, IC = 40 A, VGE = 15 V 2 www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 20 A FGH40N60SFDTU_F085 Rev.1.0 Typ. Max TC = - 1.80 2.6 TC = 125oC - 1.70 - - 68 - - 240 - - 160 - - 840 - TC = 25oC IF =20 A, diF/dt = 200 A/s ©2015 Fairchild Semiconductor Corporation Min. 25oC TC = TC = 25oC TC = 3 125oC 125oC Unit V ns nC www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transfer Characteristics Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 4 www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics Figure 11. SOA Characteristics ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 Figure 12. Turn-on Characteristics vs. Gate Resistance 5 www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 6 www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time Figure 23.Transient Thermal Impedance of IGBT PDM t1 ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 7 t2 www.fairchildsemi.com FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N60SFDTU_F085 — 600 V, 40 A Field Stop IGBT Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2015 Fairchild Semiconductor Corporation FGH40N60SFDTU_F085 Rev.1.0 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* SerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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