Plastic PNP Epitaxial Silicon Power Transistor MJE350 Plastic PNP Epitaxial Silicon Power Transistor Features • High collector-emitter breakdown voltage • Suitable for high voltage general purpose applications • Complement to MJE340 Mechanical Data Case: TO-126 TO-126, Plastic Package Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.08 ounces, 2.24 grams Absolute Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V Collector Current Continuous -0.5 A Power Dissipation @ Ta=25°C Derate above 25°C 1.25 10 W mW/° C IC PD Power Dissipation @ Tc=25°C Derate above 25°C TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 20 0.16 -65 ~ +150 W W/° C °C Rev. A/JH Page 1 of 6 Plastic PNP Epitaxial Silicon Power Transistor MJE350 Thermal Characteristics Symbol Description Value Unit RθJA Thermal Resistance from Junction to Ambient in Free Air 100 ° C /W RθJC Thermal Resistance from Junction to Case 6.25 ° C /W Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol VCEO(sus) Description Collector-Emitter Sustaining Voltage ICBO Collector-Base Cut-off Current IEBO Emitter-Base Cut-off Current hFE DC Current Gain Conditions Min. Max. Unit IC=-1mA, IB=0 -300 - V VCB=-300V, IE=0 - -100 μA VEB=-3V, IC=0 - -100 μA VCE=-10V, IC=-50mA 30 240 Typical Characteristics Curves Fig.2- Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Saturation Voltage VBE(sat), VCE(sat)(V) DC Current Gain, hFE Fig.1- DC Current Gain Collector Current, IC(A) Collector Current, IC(A) Rev. A/JH www.taitroncomponents.com Page 2 of 6 Plastic PNP Epitaxial Silicon Power Transistor MJE350 Fig.4- Power Derating Collector Current, Ic(A) Power Dissipation, PC(W) Fig.3- Safe Operating Area Collector-Emitter Voltage, VCE(V) Case Temperature, TC(°C) Dimensions in mm TO-126 Rev. A/JH www.taitroncomponents.com Page 3 of 6 Plastic PNP Epitaxial Silicon Power Transistor MJE350 Packing Information Tube Dimensions Rev. A/JH www.taitroncomponents.com Page 4 of 6 Plastic PNP Epitaxial Silicon Power Transistor MJE350 Bulk Dimensions Packing Details Pack Description Standard Pack Inner Box Carton Box BL Bulk, RoHS 500/polybag 2K 32K TU Tube, RoHS 50/tube 1K 10K Rev. A/JH www.taitroncomponents.com Page 5 of 6 Plastic PNP Epitaxial Silicon Power Transistor MJE350 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/JH www.taitroncomponents.com Page 6 of 6