SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: SOT-23 SOT-23, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.008 gram Marking Information Marking Code BC817-16 BC17-25 BC817-40 6A 6B 6C Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Conditions VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 500 mA PD 225 mW TA=25 ˚C Total Device Power Dissipation 1.8 mW/°C Derate above 25 ˚C 556 °C /W 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C 417 °C /W -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1) PD Total Device Power Dissipation, Alumina Substrate RθJA TJ, TSTG Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage, Temperature Range Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CZ Page 1 of 5 SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage 45 - V IC=10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 50 - V IC=10µA, VEB=0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V IE=1µA, IC=0 - 100 nA VCB=20V - 5 mA VCB=20V, TA=150˚C Min. Max. Unit Conditions 100 250 VCE=1V, IC=100mA 40 - VCE=1V, IC=500mA 160 400 40 - VCE=1V, IC=500mA 250 600 VCE=1V, IC=100mA 40 - VCE=1V, IC=500mA ICBO Collector Cut-off Current On Characteristics Symbol Description BC817-16 hFE BC817-25 D.C. Current Gain BC817-40 - VCE=1V, IC=100mA VCE(sat) Collector-Emitter Saturation Voltage - 0.7 V IC=500mA, IB=50mA VBE(on) Base-Emitter On Voltage - 1.2 V IC=500mA, VCE=1V Description Min. Typ. Unit Conditions Current Gain-Bandwidth Product 100 - MHz - 10 pF Small-signal Characteristics Symbol fT COBO Output Capacitance VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1.0MHz Rev. A/CZ www.taitroncomponents.com Page 2 of 5 SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 Typical Characteristics Curves Fig.2- Saturation Region Voltage (V) Fig.3- “On” Voltage Collector-Emitter Voltage VCE (V) Collector Current IC (mA) Temperature Coefficients θV (mV/°C) DC Current Gain hFE Fig.1- DC Current Gain Base Current IB (mA) Fig.4- Temperature Coefficients Collector Current IC (mA) Collector Current IC (mA) Capacitance (pF) Fig.5- Capacitance Reverse Voltage VR (V) Rev. A/CZ www.taitroncomponents.com Page 3 of 5 SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 Dimensions in mm SOT-23 Rev. A/CZ www.taitroncomponents.com Page 4 of 5 SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CZ www.taitroncomponents.com Page 5 of 5