HAF1001 Silicon P Channel MOS FET Series Power Switching REJ03G1132-0400 (Previous: ADE-208-583A) Rev.4.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (–4 to –6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 4 G 1 2 Gate resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Gate Shutdown Circuit 3 S Rev.4.00 Apr 27, 2006 page 1 of 7 HAF1001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS VGSS ID Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Value –60 –16 3 –15 –30 –15 50 150 –55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Rev.4.00 Apr 27, 2006 page 2 of 7 Symbol VIH VIL Min –3.5 — Typ — — Max — –1.2 Unit V V Test Conditions IIH1 IIH2 IIL — — — — — — –3.5 — — — –0.8 –0.35 175 — –100 –50 –1 — — — –13 µA µA µA mA mA °C V Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature IIH (sd) 1 IIH (sd) 2 Tsd VOP HAF1001 Electrical Characteristics (Ta = 25°C) Item Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss Min –7 — –60 –16 3 — — — — — — — –1.1 — — 5 — Typ — — — — — — — — — –0.8 –0.35 — — 100 70 10 610 Max — –10 — — — –100 –50 –1 100 — — –250 –2.25 130 90 — — Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time td (on) tr td (off) tf VDF trr — — — — — — 7.5 36 32 29 –1.0 200 — — — — — — µs µs µs µs V ns Over load shut down operation time Note4 tos1 tos2 — — 3.7 1 — — ms ms Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Test Conditions VGS = –3.5 V, VDS = –2 V VGS = –1.2 V, VDS = –2 V ID = –10 mA, VGS = 0 IG = –100 µA, VDS = 0 IG = 100 µA, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –7.5 A, VGS = –4 V Note 3 ID = –7.5 A, VGS = –10 V Note 3 ID = –7.5 A, VDS = –10 V Note 3 VDS = –10 V, VGS = 0 f = 1 MHz ID = –7.5 A VGS = –5 V RL = 4 Ω IF = –15 A, VGS = 0 IF = –15 A, VGS = 0 diF/dt = 50 A/µs VGS = –5 V, VDD = –12 V VGS = –5 V, VDD = –24 V Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. Rev.4.00 Apr 27, 2006 page 3 of 7 HAF1001 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area –500 Thermal shut down Operation area 60 40 20 ID (A) –200 –100 Drain Current Channel Dissipation Pch (W) 80 –20 50 100 150 Case Temperature 10 DC –10 –5 –2 –1 200 = m 10 µs s m s (T c= 25 °C ) –5 –10 –20 –50 –100 Typical Transfer Characteristics –20 –6 V –30 –5 V –20 –4 V –10 VGS = –3 V –3.5 V ID (A) –8 V –40 0 –2 –4 –6 Drain to Source Voltage –8 0 –1.2 ID = –10 A –5 A –0.4 –2 A 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Rev.4.00 Apr 27, 2006 page 4 of 7 –1 –2 –3 –4 Gate to Source Voltage –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) –1.6 0 –4 0 Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.8 –8 VDS (V) Pulse Test 25°C 75°C –10 –2.0 Tc = –25°C VDS = –10 V Pulse Test Pulse Test 0 –16 –12 Drain Current –10 V ID (A) ion 1 0 Drain to Source Voltage VDS (V) Tc (°C) –50 Drain Current at Operation in this area is limited by RDS (on) Typical Output Characteristics Drain to Source Saturation Voltage VDS (on) (V) PW Op er –0.5 Ta = 25°C –0.3 –0.3 –0.5 –1 –2 0 0 20 µs –50 0.5 Pulse Test 0.2 0.1 0.05 VGS = –4 V –10 V 0.02 0.01 –0.1 –0.2 –0.5 –1 –2 Drain Current –5 –10 –20 –50 ID (A) Static Drain to Source on State Resistance vs. Temperature 0.20 ID = –10 A 0.16 –5 A VGS = –4 V 0.12 –2 A –10 A 0.08 –2, –5 A –10 V 0.04 Pulse Test 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAF1001 50 VDS = –10 V Pulse Test 20 Tc = –25°C 10 5 25°C 75°C 2 1 0.5 –0.1 –0.2 –0.5 –1 –2 Tc (°C) Drain Current ID (A) Switching Characteristics 100 500 td(off) 50 Switching Time t (µs) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 200 100 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 –0.1 –0.2 –0.5 –1 –2 tf 20 tr 10 td(on) 5 2 1 VGS = –5 V, VDD = –30 V PW = 300 µs, duty ≤ 1 % 0.5 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 Reverse Drain Current IDR (A) 10000 Pulse Test –16 VGS = –5 V –12 ID (A) Typical Capacitance vs. Drain to Source Voltage Capacitance Coss (pF) Reverse Drain Current IDR (A) –20 –5 –10 –20 –50 Drain Current Reverse Drain Current vs. Source to Drain Voltage 0V –8 –4 0 –5 –10 –20 –50 3000 1000 300 VGS = 0 f = 1 MHz 100 0 –0.4 –0.8 –1.2 Source to Drain Voltage Rev.4.00 Apr 27, 2006 page 5 of 7 –1.6 –2.0 VSD (V) 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) HAF1001 Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test –12 –10 VDD = –36 V –8 –24 V –12 V –9 V –6 –4 –2 0 0.0001 0.001 0.01 0.1 1 200 180 160 140 120 ID = –5 A 100 0 –2 –4 –6 –8 Gate to Source Voltage Shutdown Time of Load-Short Test PW (S) –10 VGS (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 2.50°C/W, Tc = 25°C 0.1 0.1 0.05 0.03 0.0 1 1s D= PDM 2 0.0 h p ot uls 0.01 10 µ e PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin –5 V 50 Ω VDD = –30 V Vout td(on) Rev.4.00 Apr 27, 2006 page 6 of 7 10% tr 10% td(off) tf HAF1001 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part Name HAF1001-90 Quantity Max: 50 pcs/sack Shipping Container Sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Apr 27, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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