2SC945 pdf

UNISONIC TECHNOLOGIES CO., LTD
2SC945
NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR

DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.

FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
* Complimentary to UTC 2SA733

ORDERING INFORMATION
Order Number
Package
Lead Free Plating
Halogen Free
2SC945L-x-T92-B
2SC945G-x-T92-B
TO-92
2SC945L-x-T92-K
2SC945G-x-T92-K
TO-92
Note: Pin Assignment: E: Emitter
C: Collector
B: Base

Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SC945

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Dissipation(Ta=25C)
PC
250
mW
Collector Current
IC
150
mA
Base Current
IB
50
mA
Junction Temperature
TJ
125
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure

SYMBOL
BVCBO
BVCEO
ICBO
IEBO
hFE
VCE(SAT)
fT
Cob
TEST CONDITIONS
IC=100μA, IE=0
IC=10mA, IB=0
VCB=40V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz
NF
MIN
60
50
TYP
90
100
0.1
190
2.0
4.0
MAX
100
100
600
0.3
UNIT
V
V
nA
nA
3.0
V
MHz
pF
6.0
dB
CLASSIFICATION OF hFE
RANK
RANGE
R
90-180
Q
135-270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
200-400
K
300-600
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DC Current Gain, hFE
Collector Current, IC (mA)
TYPICAL CHARACTERISTICS
Saturation Voltage (mV)
Collector Current, IC (mA)

NPN SILICON TRANSISTOR
Current Gain-Bandwidth Product
Collector Output Capacitance
103
102
VCE=6V
102
101
101
100
100
10-1
0
1
10
10
Collector Current, IC (mA)
2
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10-1
100
f=1MHz
IE=0
101
102
103
Collector-Base Voltage (V)
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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