UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES TO-92 *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING INFORMATION PACKAGE MARKING TO-92 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-029.B 9012 PNP SILICON EPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector dissipation PC 625 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(on) DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage TEST CONDITIONS IC=-100μA,IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA MIN -40 -20 -5 TYP 64 40 120 90 -0.18 -0.95 -0.67 -0.6 MAX UNIT V V V -100 nA -100 nA 300 -0.6 -1.2 -0.7 V V V CLASSIFICATION OF hFE1 RANK RANGE D 64-91 E 78-112 F 96-135 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw G 112-166 H 144-202 I 190-300 2 of 3 QW-R201-029.B 9012 PNP SILICON EPITAXIAL TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristic DC Current Gain -50 1000 IB=-150μA -30 IB=-100μA -20 IB=-500μA -10 0 -10 0 -1000 Saturation Voltage ,VBE(sat), VCE(sat) 500 IB=-200μA -20 -30 -40 DC Current Gain ,hFE -40 VCE=-1V 300 100 50 30 10 -10 -50 -30 -50 -100 -300 -500 -1000 Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product VBE(sat) -500 -300 -100 VCE(sat) -50 -30 IC=10IB -10 -10 -30 -50 -100 -300 -500 -1000 Collector Current, IC (mA) Current Gain Bandwidth Paoduct ,fT (MHz) Collector Current, IC (mA) IB=-250μA 1000 500 300 VCE=-6V 100 50 30 10 5 3 1 -1 -3-5 -10 Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-029.B