Silicon Rectifier Formosa MS EF101G THRU EF105G List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings .............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Taping & bulk specifications for AXIAL devices.................................... 4 Suggested thermal profiles for soldering processes............................. 5 High reliability test capabilities........................................................... 6 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-222525 2009/02/10 2010/05/10 Revision C Page. 6 Chip Silicon Rectifier Formosa MS EF101G THRU EF105G 1.0A Glass Passivated Leaded Efficient Fast Rectifiers-50-600V Package outline Features DO-41 • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency • High current & surge capability. • Low forward dropdown voltage • Glass passivated chip junction. • Lead-free parts meet environmental standards of 1.0(25.4) MIN. .107(2.7) .080(2.0) DIA. MIL-STD-19500 /228 .205(5.2) • Suffix "-H" indicates Halogen free parts, ex. EF101G-H. .166(4.2) Mechanical data 1.0(25.4) MIN. .034(.9) .028(.7) DIA. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, DO-41 • Lead : Axial leads, solderable per MIL-STD-202, Dimensions in inches and (millimeters) Method 208 guaranteed • Polarity: Color band denotes cathode end • Mounting Position : Any • Weight : Approximated 0.33 gram Maximum ratings (AT o T A=25 C unless otherwise noted) PARAMETER CONDITIONS O Forward rectified current Ambient temperature = 55 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) MAX. UNIT IO 1.0 A I FSM 30 A Symbol MIN. TYP. O V R = V RRM T J = 25 C Reverse current Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature *1 V RRM (V) V RMS*2 (V) *3 VR (V) EF101G 50 35 50 EF102G 100 70 100 EF103G 200 140 200 *4 VF (V) *5 T RR (nS) Operating temperature T J, ( OC) 25 400 280 400 1.25 EF105G 600 420 600 1.75 pF 15 O +175 -65 C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 0.875 EF104G µA 100 CJ T STG SYMBOLS 5.0 IR O V R = V RRM T J = 125 C -55 to +150 *4 Maximum forward voltage@I F=1.0A *5 Reverse recovery time , note 1 Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date DS-222525 2009/02/10 2010/05/10 Revision C Page. 6 Rating and characteristic curves (EF101G THRU EF105G) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 INSTANTANEOUS FORWARD CURRENT,(A) EF101G - EF103G 1 EF104G O TJ=25 C 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.375"(9.5mm) Lead Length 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) 0.1 EF105G pulse width =300 µ S 1% duty cycle FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWARD SURGE CURRENT,(A) 30 (+) 1W NONINDUCTIVE 25 20 8.3ms Single Half TJ=25 C Sine Wave 15 JEDEC method 10 0 1 OSCILLISCOPE (NOTE 1) 5 50 10 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 40 JUNCTION CAPACITANCE,(pF) trr | | | | | | | | +0.5A 0 -0.25A -1.0A 30 25 20 15 10 5 1cm SET TIME BASE FOR 10 / 20ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date DS-222525 2009/02/10 2010/05/10 Revision C Page. 6 Chip Silicon Rectifier Formosa MS EF101G THRU EF105G Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Marking Type number EF101G EF102G EF103G EF104G EF105G Marking code EF101G EF102G EF103G EF104G EF105G Taping & bulk specifications for AXIAL devices 52.4mm 17mm DIA. 55mm Max. A 17mm DIA. 72mm DIA. 71mm Max. 355mm OFF Center both sids 1.0mm Max OFF Alignment 1.2mm 6.3mm REEL PACKING DEVICE Q'TY 1 COMPONENT CARTON Q'TY 2 APPROX. CASE (PCS / REEL) SPACING SIZE (PCS / CARTON) CROSS "A" in FIG. A (m/m) TYPE DO-41 5,000 5 mm 360 * 340 * 370 WEIGHT(kg) 20,000 10.8 AMMO PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS (m/m) (m/m) TYPE DO-41 5,000 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 260 * 83 * 160 440 * 270 * 340 Page 4 WEIGHT(kg) 50,000 20.0 Document ID Issued Date Revised Date DS-222525 2009/02/10 2010/05/10 Revision C Page. 6 Chip Silicon Rectifier Formosa MS EF101G THRU EF105G BULK PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS TYPE (m/m) DO-41 1,000 WEIGHT(kg) (m/m) 194 * 84 * 20 465 * 220 * 260 50,000 20.6 Suggested thermal profiles for soldering processes 1.Lead free temperature profile wave-soldering 280 Peak soldering temperature not to exceed 260ºC 260 240 220 Temperature(°C) 200 180 160 140 120 Peak Max well time 5 Max 100 80 Cool Down Max gradient-4ºC/s Suggested gradient - 2ºC/s or less 60 40 20 Preheat Max gradient 2ºC/s 0 0 20 40 60 80 100 120 140 160 180 200 220 240 Time(Sec) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-222525 2009/02/10 2010/05/10 Revision C Page. 6 Chip Silicon Rectifier Formosa MS EF101G THRU EF105G High reliability test capabilities Item Test Conditions Reference o MIL-STD-750D METHOD-2031 o 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" 2. Solderability at 245±5 C for 5 sec. MIL-STD-202F METHOD-208 3. Pull Test 1kg in axial lead direction for 10 sec. MIL-STD-750D METHOD-2036 4. Bend Lead 1kg weight applied to each lead bending o o arc 90 ±5 for 3 times. MIL-STD-750D METHOD-2036 5. High Temperature Reverse Bias V R=80% rate at T J=150 C for 168 hrs. 6. Forward Operation Life Rated average rectifier current at T A=25 C for 500hrs. MIL-STD-750D METHOD-1026 o MIL-STD-750D METHOD-1027 o O 7. Intermittent Operation Life 8. Pressure Cooker 9. Temperature Cycling 10. Thermal Shock 11. Forward Surge T A = 25 C, I F = I O On state: power on for 5 min. off state: power off for 5 min, on and off for 500 cycles. MIL-STD-750D METHOD-1036 JESD22-A102 o 15P SIG at T A=121 C for 4 hrs. o MIL-STD-750D METHOD-1051 o -55 C to +125 C dwelled for 30 min. and transferred for 5min. total 10 cycles. 0 C for 5 min. rise to 100 C for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 8.3ms single half sine-wave superimposed on rated load, one surge. MIL-STD-750D METHOD-4066-2 o o 12. Humidity o at T A=85 C , RH=85% for 1000hrs. 13. High Temperature Storage Life at 175 C for 1000 hrs. MIL-STD-750D METHOD-1031 14. Solvent Resistance o Dip into Freon at 25 C for 1 min. MIL-STD-202F METHOD-215 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1038 o Page 6 Document ID Issued Date Revised Date DS-222525 2009/02/10 2010/05/10 Revision C Page. 6