Formosa MS Silicon Rectifier 1A1 THRU 1A7 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings .............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Taping & bulk specifications for AXIAL devices.................................... 4 Suggested thermal profiles for soldering processes............................. 5 High reliability test capabilities...........................................................6 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-222110 2008/02/10 Revised Date - Revision A Page. 6 Formosa MS Silicon Rectifier 1A1 THRU 1A7 1.0A Leaded Type General Purpose Rectifiers - 50V-1000V Package outline Features R-1 • Axial lead type devices for through hole design. • High current capability. • High surge capability. • Open junction chip inside. • Lead-free parts meet environmental standards of .102(2.6) .091(2.3) DIA. .787(20.0) MIN. MIL-STD-19500 /228 .126(3.2) .106(2.7) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, R-1 • Lead : Axial leads, solderable per MIL-STD-202, .787(20.0) MIN. .025(0.65) .021(0.55) DIA. Method 208 guranteed • Polarity: Color band denotes cathode end • Mounting Position : Any • Weight : Approximated 0.19 gram Maximum ratings (AT Dimensions in inches and (millimeters) T A=25 oC unless otherwise noted) PARAMETER CONDITIONS See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Storage temperature SYMBOLS *1 V RRM (V) I FSM *3 VR (V) 1A1 50 35 50 1A2 100 70 100 1A3 200 140 200 1A4 400 280 400 1A5 600 420 600 1A6 800 560 800 1A7 1000 700 1000 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 *4 VF (V) Operating temperature T J, ( OC) MAX. A 30 A 50 60 CJ 15 -65 UNIT 1.0 5.0 R èJA T STG V RMS*2 (V) TYP. IR V R = V RRM T A = 100 OC Thermal resistance Diode junction capacitance MIN. IO Forward rectified current Reverse current Symbol uA O C/W pF +175 O C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 1.10 -55 to +125 Page 2 *4 Maximum forward voltage Document ID Issued Date DS-222110 2008/02/10 Revised Date - Revision A Page. 6 Rating and characteristic curves (1A1 THRU 1A7) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.375"(9.5mm) Lead Length 0.2 0 0 20 40 60 TJ=25 C 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 30 24 18 8.3ms Single Half TJ=25 C Sine Wave 12 JEDEC method 6 0 1 100 5 50 10 100 NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL JUNCTION CAPACITANCE 35 TJ=100 C JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (uA) 10 1.0 TJ=25 C .1 30 25 20 15 10 5 .01 0 0 20 40 60 80 .01 .1 .5 1 5 10 50 100 Revision Page. REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 .05 100 120 140 Page 3 Document ID Issued Date DS-222110 2008/02/10 Revised Date - A 6 Formosa MS Silicon Rectifier 1A1 THRU 1A7 Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Marking Type number Marking code 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1A1 1A2 1A3 1A4 1A5 1A6 1A7 Taping & bulk specifications for AXIAL devices 52.4mm/ 26.2mm 17mm DIA. 55mm Max. A 17mm DIA. 72mm DIA. 71mm Max. 355mm OFF Center both sids 1.0mm Max OFF Alignment 1.2mm 6.3mm REEL PACKING DEVICE Q'TY 1 COMPONENT CARTON Q'TY 2 APPROX. CASE (PCS / REEL) SPACING SIZE (PCS / CARTON) CROSS "A" in FIG. A (m/m) TYPE R-1/52mm 5,000 5 mm 360 * 340 * 370 WEIGHT(kg) 20,000 7.3 AMMO PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS (m/m) (m/m) TYPE WEIGHT(kg) R-1/26mm 5,000 256 * 4 7 * 73 310 * 268 * 170 36,000 6.8 R-1/52mm 5,000 260 * 80 * 140 410 * 270 * 300 50,000 12.5 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-222110 2008/02/10 Revised Date - Revision A Page. 6 Formosa MS Silicon Rectifier 1A1 THRU 1A7 BULK PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS TYPE (m/m) R-1 194 * 8 4 * 20 1,000 WEIGHT(kg) (m/m) 50,000 465 * 220 * 260 12.2 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-222110 2008/02/10 Revised Date - Revision A Page. 6 Formosa MS Silicon Rectifier 1A1 THRU 1A7 High reliability test capabilities Item Test Conditions Reference o 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 oC for 5 sec. MIL-STD-202F METHOD-208 3. Pull Test 0.5kg in axial lead direction for 10 sec. I F=I O MIL-STD-202F METHOD-211A 4. Bend Lead 0.5kg weight applied to each lead bending arc 90o±5 o for 3 times, I F=I O MIL-STD-202F METHOD-211A V R=80% rate at T J=125 oC for 168 hrs. MIL-STD-750D METHOD-1026 5. High Temperature Reverse Bias Rated average rectifier current at T=25 oC for 500hrs. MIL-STD-750D METHOD-1027 6. Forward Operation Life 7. Intermittent Operation Life T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min, on and off for 500 cycles. MIL-STD-750D METHOD-1036 15P SIG at TA=121 oC for 4 hrs. 8. Pressure Cooker 9. Temperature Cycling -55 oC to +125oC dwelled for 30 min. and transferred for 5min. total 10 cycles. MIL-STD-750D METHOD-1051 0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 10. Thermal Shock 11. Forward Surge 8.3ms single half sine-wave superimposed on rated load, one surge. MIL-STD-750D METHOD-4066-2 at TA=65 oC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 12. Humidity at 175oC for 1000 hrs. MIL-STD-750D METHOD-1031 13. High Temperature Storage Life Dip into Freon at 25oC for 1 min. MIL-STD-202F METHOD-215 14. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-222110 2008/02/10 Revised Date - Revision A Page. 6