SKM 600GA125D

SKM 600GA125D
> (3 ?@ $
Absolute Maximum Ratings
Symbol Conditions
IGBT
A > (3 ?
A > )3& ?
4C
)(&&
30&
<
> 0& ?
2&&
<
0&&
<
D (&
)&
G
> (3 ?
3&&
<
> 0& ?
*3&
<
0&&
<
*"&&
<
3&&
<
2& 111 I )3& +)(3-
?
)(3
?
2&&&
4C>(#
Ultra Fast IGBT Modules
SKM 600GA125D
> "&& E ; (& E
F )(&& Units
> (3 ?
SEMITRANS® 4
Values
A > )(3 ?
Inverse Diode
H
A > )3& ?
H4C
H4C>(#H
HC
> )& E 1
A > )3& ?
Module
+4CA
!
Features
! " # $ $$% "&'()** +$,- *.*/ "01) 2&/)(3/3"
Typical Applications*
4 )&& 567
$ !
$ 8 9(& 567
Remarks
: ; 3&&< $ =, 5 ! $
=, , $1
<@ ) 1
> (3 ?@ $
Characteristics
Symbol Conditions
IGBT
+-
> @ > )" <
> & @ > &
+-
> )3 min.
typ.
max.
Units
2@3
3@3
"@3
A > (3 ?
&@)3
&@23
<
A > (3 ?
)@3
)@'3
A > )(3 ?
)@'
A > (3?
2@3
A > )(3?
"
> 2&& <@ > )3 A > (3? 1
A > )(3? 1
> (3@ > & > ) C67
*@*
3@*
J
J
*@03
2
*"
*@0
H
H
*@3
H
K
> 0 I(&
22&&
4
A > ?
)@(3
L
0&
'&
*&
3'&
"&
M
$+
$+
4
> (@3 L
4
> (@3 J
> "&&
> 2&&<
A > )(3 ?
> D )3
4+A-
M
&@&2)
./8
GA
1
06-10-2009 NOS
© by SEMIKRON
SKM 600GA125D
Characteristics
Symbol Conditions
Inverse Diode
H > H > 2&& <E > & H&
min.
typ.
max.
Units
A > (3 ? 1
(
(@3
A > )(3 ? 1
)@0
A > (3 ?
)@)
)@(
A > )(3 ?
H
®
SEMITRANS 4
Ultra Fast IGBT Modules
A > (3 ?
(@*
*@*
A > )(3 ?
44C
K
H > 2&& <
> & E > "&& 4+A-:
$$
J
J
A > )(3 ?
2"&
"3
<
G
M
&@&N
./8
(&
6
Module
SKM 600GA125D
Features
O
)3
4PIP
1@ 4+-
$ C
5
C
> ?
&@)0
J
&@&*0
./8
*
3
(@3 +)@)-
3 +(-
**&
!
! " # $ $$% "&'()** +$,- *.*/ "01) 2&/)(3/3"
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
Typical Applications*
application. Adjustments may be necessary. The use of SEMIKRON products in
4 )&& 567 life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
$ !
our personal.
$
9(&
567
8
Remarks
: ; 3&&< $ =, 5 ! $
=, , $1
GA
2
06-10-2009 NOS
© by SEMIKRON
SKM 600GA125D
SEMITRANS® 4
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
4
4
4
4
>)
>(
>*
>2
>)
>(
>*
(N
N
(@"
&@2
&@)&2*
&@&&N
&@&&)
5/8
5/8
5/8
5/8
>2
&@&&&(
4
4
4
4
>)
>(
>*
>2
>)
>(
>*
"(
(*
2@(
&@0
&@&3""
&@&)""
&@&&)3
5/8
5/8
5/8
5/8
>2
&@&&&(
Zth(j-c)D
Ultra Fast IGBT Modules
SKM 600GA125D
Features
! " # $ $$% "&'()** +$,- *.*/ "01) 2&/)(3/3"
Typical Applications*
4 )&& 567
$ !
$ 8 9(& 567
Remarks
: ; 3&&< $ =, 5 ! $
=, , $1
GA
3
06-10-2009 NOS
© by SEMIKRON
SKM 600GA125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 600GA125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 600GA125D
UL Recognized
File 63 532
: 3N
:3N
6
<
06-10-2009 NOS
© by SEMIKRON