SKM 100GB125DN ( 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $1: (7 3 -4 5$ (7 3 *4+ 5$ Ultra Fast IGBT Module SKM 100GB125DN *-++ 6 *++ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -++ % D E+ BBB F *4+ 5$ *-4 5$ E+++ 6 $1:3- $ 6$$ 3 ++ 6= 6;2 > -+ 6= 6$2 ? *-++ 6 Units ( 3 -4 5$ 6;2 SEMITRANS® 2N Values Inverse Diode ! !1: !: (7 3 *4+ 5$ !1:3- ! 3 *+ = B (7 3 *4+ 5$ Module )1:, (#7 ( Features ! " # $% &$' & $ ' ( )*+ , )-+ , Typical Applications* . -+ /0 1 # *++ /0 # 2 . -+ /0 6 %$ * B ( 3 -4 5$ Characteristics Symbol Conditions IGBT 6;2), $2 6;2 3 6$2 $ min. 3 - % 6;2 3 + 6 6$2 3 6$2 6$2+ E4 (7 3 -4 5$ typ. max. 44 4 6 +*4 +E4 % (7 3 *-4 5$ % (7 3 -4 5$ 6 (7 3 *-4 5$ $2 6;2 3 *4 6 6 (7 3 -45$ G (7 3 *-45$ 6$2), $ $ $ 3 C4 % 6;2 3 *4 6 6$2 3 -4 6;2 3 + 6 6;2 3 + D F-+6 1; (7 3 5$ ), 2 ), 1; 3 9 G 1; 3 9 G 2 1)7D, ;'( G (7 3 5$ #B HH H94 6 3 * :0 4 +C- +A ! ! +H9 +4 ! $ I; Units 4+ 6$$ 3 ++6 $3 C4% (7 3 *-4 5$ 6;2 3 < *46 $ 4 J 9+ E+ A H+ -+ K H4 K +*9 LMN GB 1 02-08-2012 DIL © by SEMIKRON SKM 100GB125DN Characteristics Symbol Conditions Inverse Diode 6! 3 62$ ! 3 C4 %= 6;2 3 + 6 6!+ min. typ. max. Units (7 3 -4 5$ #B - -4 6 (7 3 *-4 5$ #B *9 (7 3 -4 5$ ** 6 *- (7 3 *-4 5$ ! ® SEMITRANS 2N Ultra Fast IGBT Module 6 (7 3 -4 5$ *- *CH (7 3 *-4 5$ I ! 3 C4 % M 3 9++ %M@ 2 6;2 3 + 6= 6$$ 3 ++ 6 1)7D,& 11: 6 G G (7 3 *-4 5$ 4+ **4 % @$ E K +4 LMN -4 Module SKM 100GB125DN Features ! " # $% &$' & $ ' ( )*+ , )-+ , $2 1$$OF22O -+ B D ( 3 -4 5$ +C4 G ( 3 *-4 5$ * G 1)D, : / : H : :4 -4 ++4 LMN 4 4 *+ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. Typical Applications* . -+ /0 1 # *++ /0 # 2 . -+ /0 GB 2 02-08-2012 DIL © by SEMIKRON SKM 100GB125DN SEMITRANS® 2N Zth Symbol Zth(j-c)l Conditions Values Units 1 1 1 1 3* 33H 3E 3* 33H A4 4 *C4 -4 ++H-C +++9 +++*C /MN /MN /MN /MN 3E +++9 1 1 1 1 3* 33H 3E 3* 33H H++ *+ H E ++4E +++* +++*4 /MN /MN /MN /MN 3E +* Zth(j-c)D Ultra Fast IGBT Module SKM 100GB125DN Features ! " # $% &$' & $ ' ( )*+ , )-+ , Typical Applications* . -+ /0 1 # *++ /0 # 2 . -+ /0 GB 3 02-08-2012 DIL © by SEMIKRON SKM 100GB125DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 02-08-2012 DIL © by SEMIKRON SKM 100GB125DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 02-08-2012 DIL © by SEMIKRON SKM 100GB125DN UL Recognized File 63 532 $ & AH ;' 6 $ & AH 02-08-2012 DIL © by SEMIKRON