SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 256 A Tc = 100 °C 217 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 ... 150 °C -40 ... 125 °C 1 min 4000 V 1s 4800 V Rect. Diode ID IFSM i2t SEMiX® 13 Tj = 150 °C sinus 180° 10 ms 10 ms Tj Bridge Rectifier Module (uncontrolled) Module Tstg Visol SEMiX251D12Fs AC sinus 50Hz Characteristics Features • Terminal height 17 mm • Chips soldered directly to isolated substrate • UL recognised file no. E63532 Typical Applications* • Fast Input Bridge Rectifier for AC/DC motor control • Power supply • High frequency applications Symbol Conditions min. typ. max. Unit Rectifier Diode VF Tj = 25 °C, IF = 155 A, chiplevel 2.5 V V(TO) Tj = 125 °C, chiplevel 1.2 V rT Tj = 125 °C, chiplevel 7 m IRD Tj = 125 °C, VRD = VRRM Rth(j-c) sin. 180 per diode 40 mA 0.26 K/W K/W Module Rth(c-s) per chip K/W per module 0.04 K/W Ms to heat sink (M5) 3 5 Mt to terminals (M6) 2.5 5 Nm 5 * 9,81 m/s² a w 350 Nm g D © by SEMIKRON Rev. 1 – 21.03.2013 1 SEMiX251D12Fs Fig. 4L: Power dissipation per module vs. direct current Fig. 4R: Power dissipation per module vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 2 Rev. 1 – 21.03.2013 © by SEMIKRON SEMiX251D12Fs spring configuration SEMiX 13 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 21.03.2013 3