μRDS(on) FET™ Series PI5101-01-LGIZ 360μΩ, 5 V/60 A N-Channel MOSFET Product Description Features The PI5101μRDS(on) FET™ solution combines a highperformance 5 V, 360 μΩ lateral N-Channel MOSFET with a thermally enhanced high density 4.1mm x 8mm x 2mm land-grid-array (LGA) package to enable world class performance in the footprint area of an industry standard SO-8 package. The PI5101 offers unprecedented figure-ofmerits for DC & switching applications. The PI5101 will replace up to 6 conventional “SO-8 form factor” devices for the same on-state resistance, reducing board space by ~80%. The PI5101 offers unprecedented figure-of-merit for RDS(on) x QG, gate resistance (RG) and package inductance (LDS) outperforming conventional Trench MOSFETs and enabling very low loss operation. • Ultra Low “micro-Ohm” RDS(on) The PI5101 LGA package is fully compatible with industry standard SMT assembly processes. • Extremely Low Gate Charge • Very Low Gate Resistance • High Density, Low Profile • Very Low Package Inductance • Low Thermal Resistance Applications • Power Path Management Solutions • Active ORing & Load Switches • High Current DC-DC Converters Product Summary Package Information Symbol Condition ID TA = 25°C 60 ADC Max V(BR)DSS ID = 5 mA 5V 360 μΩ Min 380 μΩ Typ 65 nC Typ RG 0.1 Ω Typ LDS 0.1 nH Typ RDS(ON) QG VGS = 4.5 V VGS = 3.5 V VGS = 4.5 V μRDS(on) FET™ Series Page 1 of 10 Value • 4.1mm x 8mm x 2mm Thermally Enhanced LGA Typ Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ Order Information Part Number Package Transport Media PI5101-01-LGIZ 4.1mm x 8mm x 2mm 3-Lead LGA T&R Maximum Rating and Thermal Characteristics TA = 25°C unless otherwise specified. Parameter Symbol Limit Unit Drain-to-Source Voltage VDS 5 V Gate-to-Source Voltage VGS ±5 V ID 60 A IDM 150 A IAS 100 A 3.1 W 2 W TJ, TSTG -55 to 150 °C RθJ-A 40 °C/W 6 °C/W 260 °C Continuous Drain Current Pulsed TAV <100 μs Single Pulse Avalanche Current TA = 25°C Maximum Power Dissipation PD TA = 70°C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance [1] Junction-to-PCB Lead Temperature (Soldering, 20 sec) [1] RθJ-PCB The thermal resistance is measured when the device is mounted on 1 inch square 4-layer 2-oz copper FR-4 PCB at 0LFM and 40A drain current μRDS(on) FET™ Series Page 2 of 10 Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ Electrical Characteristics TA = 25°C unless otherwise specified. Parameter Symbol Drain-to-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-to-Source Leakage Current Gate-to-Source Leakage Gate Threshold Voltage V(BR)DSS ∆V(BR)DSS ∆TJ IDSS IGSS VGS(th) Drain-to-Source On-State Resistance RDS(on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Transconductance Conditions Input Specifications VGS = 0 V, ID = 5 mA Min Typ Max 5.0 Unit V Reference to 25°C, VGS = 0 V, ID = 5 mA 3.1 0.2 10 td(on) tr td(off) tf gfs VDS = 4.8 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = VGS, ID = 1 mA VGS = 4.5 V, ID = 60 A VGS = 3.5 V, ID = 60 A VGS = 4.5 V, ID = 60 A, RG = 0.1Ω VGS = 4.5 V, ID = 60 A, RG = 0.1Ω VGS = 4.5 V, ID = 60 A, RG = 0.1Ω VGS = 4.5 V, ID = 60 A, RG = 0.1Ω ID = 60 A, VDS = 4 V Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Gate Capacitance VDS = 5 V, VGS = 0 V, f = 1MHz; See Figure 6 VDS = 5 V, VGS = 0 V, f = 1MHz; See Figure 6 VDS = 5 V, VGS = 0 V, f = 1MHz Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Qg Qgs Qgd RG 0.4 360 380 14 4.5 23 3.5 620 mV/℃ 2 200 0.8 450 475 μA nA V μΩ μΩ ns ns ns ns S 7600 5200 1100 pF pF pF 65 7.7 9.0 0.1 nC nC nC Ω IS = 16 A, di⁄dt = 33 A⁄μs 300 ns IS = 16 A, VGS = 0 V (Pulse Test) 0.63 0.1 Gate Charge VGS = 4.5 V, VDD = 4.4 V, ID = 60 A; See Figure 3 VGS = 4.5 V, VDD = 4.4 V, ID = 60 A VGS = 4.5 V, VDD = 4.4 V, ID = 60 A Reverse Diode Source-to-Drain Reverse Recovery Time Diode Forward Voltage Package Inductance μRDS(on) FET™ Series Page 3 of 10 trr VSD LDS Rev 1.0 vicorpower.com 01/2014 800 927.9474 1.0 V nH PI5101-01-LGIZ Typical Characteristics TA = 25°C unless otherwise specified. 200 160 180 VGS = 3 V, 2 V, 1.4 V 140 V GS 100 .2 V =1 ID, Drain Current (A) ID - Drain Current (A) 160 120 80 60 40 140 120 TJA = 125°C 100 25°C 80 -55°C 60 40 VGS = 1.0 V 20 0 0.0 0.2 0.4 0.6 20 0 0.5 0.8 0.6 0.7 VDS - Drain-to-Source Voltage (V) VGS = 4.5 V ID = 60 A 1.2 1.1 1.0 0.9 -25 0 25 50 75 100 125 150 RDS(on), Drain-to-Source On-Resistance (mΩ) RDS(on), Normalized on State Resistance 1.4 0.8 -50 1.2 1.5 1.0 0.5 0.0 0 1 2 3 4 5 Figure 5 — On-Resistance vs. Gate Voltage 9000 ID = 60 A VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd: while Cds Shorted Ciss 8000 4 Capacitance (pF) VGS, Gate-to-Source Voltage (V) 1.1 VGS, Gate-to-Source Voltage (V) Figure 2 — On-Resistance vs. Junction Temperature 3 2 7000 Coss 6000 5000 1 4000 0 0 10 20 30 40 50 60 70 0 QG, Total Gate Charge (nC) Figure 3 — Gate Charge μRDS(on) FET™ Series Page 4 of 10 1.0 2.0 TJ, Junction Temperature (°C) 5 0.9 Figure 4 — Transfer Characteristics (Pulsed VGS) Figure 1 — Output Characteristics (Pulsed VGS) 1.3 0.8 VGS, Gate-to-Source (V) 1 2 3 4 5 VDS, Drain-to_Source Voltage (V) Figure 6 — Gate Capacitance vs. Drain-to Source Voltage Rev 1.0 vicorpower.com 01/2014 800 927.9474 6 PI5101-01-LGIZ Typical Characteristics TA = 25°C unless otherwise specified. VGS(th), Normalized Gate Threshold Voltage 1.4 100 ID = 1 mA IS, Source Current (A) 1.2 1.0 0.8 0.6 TJ = 150°C TJ = 25°C 10 0.4 0.2 -50 -25 0 25 50 75 100 125 1 150 0 TJ, Junction Temperature (°C) 0.4 0.6 0.8 1 Figure 10 — Reverse Diode Forward Voltage (Pulsed Test) Figure 7 — Gate Threshold Voltage vs. Temperature 700 1.00 VG S= 0 V 600 gfs, Transconductance (S) Drain Current (µA) 0.2 VSD, Source-to-Drain Voltage (V) 0.10 500 400 300 200 100 0 0.01 0 1 2 3 4 0 5 10 20 Drain-to-Source Votage (V) 50 60 1.06 1000 VGS = 0 V ID = 5 mA 1.05 1µ s 10 µs 10 10 1.04 V(BR)DSS Normalized 100 ID, Drain Current (A) 40 Figure 11 — Forward Transconductance Figure 8 — Drain-to-Source Leakage Current 0µ s DC 1 RDS(on) Limit Package Limit Thermal Limit 0.1 0.01 0.01 1.03 1.02 1.01 1.00 0.99 0.98 Single Pulse VGS = 3.5V 0.97 0.96 0.1 1 -50 10 Figure 9 — Maximum Safe Operation Area μRDS(on) FET™ Series -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain-to-Source Voltage (V) Page 5 of 10 30 ID, Drain Current (A) Figure 12 — Drain-to-Source Breakdown Voltage vs. temperature Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ Typical Characteristics Normalized Transient Thermal Impedance (Rθ-JA) TA = 25°C unless otherwise specified. 1.00 1 = 0.5 0.2 0.1 0.10 0.05 PPK 0.02 ton Single Pulse τ Duty Cycle: δ= 0.01 10 10 -4 10 -3 10 -2 -1 1 10 10 1 t on τ 103 2 ton On Time Pulse Duration (s) Figure 13 — Normalized Transient Thermal Impedance, Junction-to-Ambient 60 60 ID Drain Current (A) ID Drain Current (A) 40 35 30 RθJPCB = 6°C/W 25 20 20 45 55 65 75 85 95 105 115 100 125 Ambient Temperature (°C) Figure 14 — PI5101 Drain current de-rating based on the maximum TJ = 150°C vs. ambient temperature μRDS(on) FET™ Series Page 6 of 10 μΩ 25 = 36 0 RθJA = 40°C/W 45 μΩ 30 R DS(on) 35 4 50 40 50 n)= μΩ R DS(o 0 μΩ 45 45 60 =3 DS (o n) = 50 55 ) on S( R RD 55 110 120 130 140 150 PCB Temperature (°C) Figure 15 — PI5101 Drain current de-rating vs. PCB temperature, for maximum TJ at 150°C Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ MOSFET Power Dissipation vs. Junction Temperature 150 145 130 Junction Temperature (°C) RDS(on)=450μΩ RθJA = 40°C/W 140 Junction Temperature (°C) 150 VGS = 4.5 V 120 110 100 90 80 70 60 50 100°C 90°C 80°C 70°C 60°C 5 135 130 125 120 140°C 130°C 120°C 115 110 110°C 105 100 95 TA = 50°C 0 140 VGS = 4.5 V RDS(on)=450μΩ RθJPCB = 6°C/W 90 100°C TPCB = 90°C 0 5 10 15 20 25 30 35 40 45 50 55 60 10 15 20 25 30 35 40 45 50 55 60 Drain Current (A) Drain Current (A) Figure 16 — Junction Temperature vs. Drain Current for a given ambient temperature (0LFM) Figure 17 — Junction Temperature vs. Drain Current for a given PCB temperature In applications such as low loss ORing Diodes or circuit breakers where the MOSFET is normally on during steady state operation, the MOSFET power dissipation is derived from the total Drain current and the on-state resistance of the MOSFET. This may require iteration to get to the final junction temperature. figure 16 and figure 17 are added to aid the user to find the final junction temperature without the iterative calculations. The PI5101 power dissipation can be calculated with the following equation: PD = ID2 • RDS(on) To find the final junction temperature for a given drain continuous DC or RMS current and a given ambient or PCB temperature; draw a vertical line from the drain current at the X-axis to intersect the ambient or PCB temperature line. At the intersection draw a horizontal line towards the Y-axis (Junction Temperature). Where: PD: ID : RDS(on): Figure 16 shows the MOSFETs final junction temperature curves versus conducted current at maximum RDS(on), and at given ambient temperatures at 0 LFM air flow. Figure 17 shows the MOSFETs final junction temperature curves versus conducted current at maximum RDS(on) at given PCB temperatures. MOSFET power dissipation Drain Current MOSFET on-state resistance Example: Note: For the worst case condition, calculate with maximum rated RDS(on) at the MOSFET maximum operating junction temperature because RDS(on) is temperature dependent. Refer to figure 2 for normalized RDS(on) values over temperature. The PI5101 maximum RDS(on) at 25°C is 450 µΩ and will increase by 24% at 125°C junction temperature. The junction temperature rise is a function of power dissipation and thermal resistance. Trise = RθJA • PD = R JA • ID2 • RDS(on) Assume that the MOSFET maximum drain current is 50 A and maximum operating ambient temperature is 70°C. First use figure 16 to find the final junction temperature for 50 A drain current at 70°C ambient temperature. In figure 16 (illustrated in figure 18) draw a vertical line from 50 A to intersect the 70°C ambient temperature line (dark blue). At the intersection draw a horizontal line towards the Y-axis (Junction Temperature). The typical junction temperature with maximum RDS(on), at load current of 50 A and 70°C ambient is 126°C. Where: RθJA : Junction-to-Ambient thermal resistance (40°C/W) μRDS(on) FET™ Series Page 7 of 10 Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ As a check, recalculate the junction temperature to confirm the plot results. Start from the final junction temperature, 126°C, and use the following steps: RDS(on) is 450μΩ maximum at 25°C and will increase as the Junction temperature increases. From figure 2, at 126°C RDS(on) will increase by 24%, then RDS(on) maximum at 126°C is: RDS(on) = 450 µΩ • 1.24 = 558 µΩ Maximum power dissipation is: PDmax = ID2 • RDS(on) = 50 A • 558 µΩ = 1.39 W Maximum junction temperature is: TJmax = 70°C + 40°C 50 A2 • 558 µΩ = 125.8°C W 150 VGS = 4.5 V RDS(on)=450μΩ RθJA = 40°C/W Junction Temperature (°C) 140 130 126 120 110 100 90 80 70 60 50 100°C 90°C 80°C 70°C 60°C TA = 50°C 0 5 10 15 20 25 30 35 40 45 50 55 60 Drain Current (A) Figure 18 — Example graphing of MOSFET junction temperature at ID = 50 A and TA = 70°C μRDS(on) FET™ Series Page 8 of 10 Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ Package Drawing Layout Recommendation μRDS(on) FET™ Series Page 9 of 10 Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ Vicor’s comprehensive line of power solutions includes high density AC-DC and DC-DC modules and accessory components, fully configurable AC-DC and DC-DC power supplies, and complete custom power systems. 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