CEP04N65/CEB04N65 CEF04N65

CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP04N65
650V
2.8Ω
4A
10V
CEB04N65
650V
2.8Ω
4A
10V
CEF04N65
650V
2.8Ω
4A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
Drain Current-Pulsed a
IDM e
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Single Pulsed Avalanche Energy
S
CEF SERIES
TO-220F
g
Single Pulsed Avalanche Current
Operating and Store Temperature Range
g
TO-220F
650
V
±30
4
Units
V
A
2.4
4
2.4 d
16
16 d
A
104
35
W
0.83
0.28
W/ C
d
A
EAS
220
mJ
IAS
4.2
A
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
1.2
3.6
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Oct
http://www.cetsemi.com
CEP04N65/CEB04N65
CEF04N65
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
650
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 650V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
2.8
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 2A
2
2.3
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
610
pF
75
pF
15
pF
18
ns
18
ns
33
ns
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 4A,
VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
16
ns
Total Gate Charge
Qg
12
nC
Gate-Source Charge
Qgs
3
nC
Gate-Drain Charge
Qgd
5
nC
VDS = 480V, ID = 4A,
VGS = 10V
Drain-Source Diode Characteristics and Maximun Ratings
IS f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
VSD
VGS = 0V, IS = 4A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 2.2A .
g.L = 25mH, IAS =4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
4
A
1.2
V
4.2
6
3.5
5
ID, Drain Current (A)
ID, Drain Current (A)
CEP04N65/CEB04N65
CEF04N65
VGS=10,9,8,6V
2.8
2.1
VGS=5V
1.4
0.7
0
2.5
5
7.5
10
12.5
0
2.5
5
7.5
10
12.5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
450
300
Coss
150
Crss
0
5
10
15
20
25
3.0
2.5
ID=2A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
-55 C
VGS, Gate-to-Source Voltage (V)
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
25 C
1
0
600
1.2
2
VDS, Drain-to-Source Voltage (V)
750
1.3
3
15
900
0
4
VGS=4V
0
TJ=125C
-25
0
25
50
75
100
125
10
1
10
0
10
-1
VGS=0V
0.4
150
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=480V
ID=4A
10
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP04N65/CEB04N65
CEF04N65
6
4
2
0
0
3
6
9
10
RDS(ON)Limit
1
100ms
1ms
10
10
12
2
10ms
0
DC
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
0.1
10
-1
PDM
0.05
t1
0.02
0.01
10
Single Pulse
-2
10
-5
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3