RENESAS HAT2285WP

Preliminary Datasheet
HAT2285WP
Silicon N Channel Power MOS FET with Schottky Barrier Diode
REJ03G1371-0310
High Speed Power Switching
Rev.3.10
May 13, 2010
Features




Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A
(Package name: WPAK-D)
5 6
S1/D2 S1/D2
7 8
D1 D1
5 6 7 8
2
G1
4
G2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
4 3 2 1
S1/D2(kelvin)
1
MOS1
S2
3
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
Ratings
ID(pulse)Note1
IDR
MOS1
30
±20
14
56
14
MOS2 & SBD
30
±12
22
88
22
Pch Note2
Tch
Tstg
8
150
–55 to +150
15
150
–55 to +150
VDSS
VGSS
ID
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW  10 s, duty cycle  1 %
2. Tc = 25°C
REJ03G1371-0310 Rev.3.10
May 13, 2010
Page 1 of 9
HAT2285WP
Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
—
—
1.0
—
—
10
—
—
—
—
—
—
—
—
Typ
—
—
—
—
19
27
18
630
155
57
4.6
2.2
1.2
7
30
Max
—
±0.1
1
2.5
24
40
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
—
—
—
—
35
3.6
0.91
18
—
—
1.19
—
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 7 A, VGS = 10 V Note3
ID = 7 A, VGS = 4.5 V Note3
ID = 7 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 14 A
VGS =10 V, ID = 7 A,
VDD  10 V, RL = 1.42 ,
Rg = 4.7 
IF = 14 A, VGS = 0 Note3
IF =14 A, VGS = 0
diF/ dt = 100 A/s
Notes: 3. Pulse test
• MOS2 & Schottky Barrier Diode
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
Forward transfer admittance
Input capacitance
RDS(on)
|yfs|
Ciss
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
Body–drain diode reverse
recovery time
trr
Min
30
—
—
1.4
—
—
24
—
Typ
—
—
—
—
14
15
40
1930
Max
—
±0.1
1
2.5
18
23
—
—
Unit
V
A
mA
V
m
m
S
pF
—
—
—
—
—
—
—
—
—
—
—
300
130
18
5.8
4.5
10
20
45
4.0
0.5
16
—
—
—
—
—
—
—
—
—
—
—
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID =1 mA
ID =11 A, VGS = 10 V Note3
ID = 11 A, VGS = 4.5 V Note3
ID = 11 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 22 A
VGS = 10 V, ID = 11 A,
VDD  10 V, RL = 0.91 ,
Rg = 4.7 
IF = 3.5 A, VGS = 0 Note3
IF = 22 A, VGS = 0
diF/ dt = 100 A/s
Notes: 3. Pulse test
REJ03G1371-0310 Rev.3.10
May 13, 2010
Page 2 of 9
HAT2285WP
Preliminary
Electrical Characteristics
 MOS1
Power vs. Temperature Derating
Maximum Safe Operation Area
Drain Current ID (A)
1000
12
8
4
10
μs
1 m 100
μs
PW
s
DC =
Op 10
era ms
tio
n
10
1
Operation in
this area is
0.1 limited by RDS(on)
Tc = 25°C
0
20
50
100
150
200
100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
4.5 V
VDS = 10 V
Pulse Test
3.6 V
3.2 V
10
VGS = 2.8 V
10
Tc = 75°C
25°C
−25°C
Pulse Test
0
5
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
200
Pulse Test
150
100
ID = 5 A
50
2A
1A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
REJ03G1371-0310 Rev.3.10
May 13, 2010
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
10
Case Temperature Tc (°C)
10 V
Drain Current ID (A)
100
0.01 1 shot Pulse
0.1
1
Drain Current ID (A)
Channel Dissipation Pch (W)
16
100
VGS = 4.5 V
10 V
10
Pulse Test
1
0.1
1
10
100
Drain Current ID (A)
Page 3 of 9
Preliminary
Forward Transfer Admittance vs.
Drain Current
50
Forward Transfer Admittance |yfs| (S)
Static Drain to Source On State Resistance
vs. Temperature
5A
Pulse Test
ID = 1 A, 2 A
40
VGS = 4.5 V
30
20
1 A, 2 A, 5 A
10 V
10
0
–25
0
25
50
75
100 125 150
100
50
Tc = –25°C
20
10
5
25°C
2
75°C
1
0.5
0.1
0.1 0.2 0.5 1
VGS = 0
f = 1 MHz
5000
Capacitance C (pF)
20
10
5
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
2
2000
1000
Ciss
500
200
Coss
100
Crss
50
20
10
0.3
1
3
10
30
0
100
5
10
15
20
25
30
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDD = 25 V
10 V
5V
16
VGS
VDS
12
20
8
10
4
VDD = 25 V
10 V
5V
4
8
12
16
Gate Charge Qg (nC)
REJ03G1371-0310 Rev.3.10
May 13, 2010
0
20
100
Switching Time t (ns)
20
ID = 14 A
40
0
50 100
Typical Capacitance vs.
Drain to Source Voltage
50
30
5 10 20
Body-Drain Diode Reverse
Recovery Time
10000
50
2
Drain Current ID (A)
100
1
0.1
VDS = 10 V
Pulse Test
0.2
Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Reverse Recovery Time trr (ns)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
HAT2285WP
tr
td(off)
50
20
10
td(on)
5
tf
2
VGS = 10 V, VDD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2
0.5 1
2
5
10 20
50 100
Drain Current ID (A)
Page 4 of 9
HAT2285WP
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current IDR (A)
10 V
5V
VGS = 0 V, –5 V
10
Pulse Test
0
0.4
0.8
1.2
1.6
Normalized Transient Thermal Impedance γs (t)
Source to Drain Voltage
2.0
VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
θch – c = 15.6°C/W, Tc = 25°C
0.1 0.1
0.05
02
0.03 0. 1
e
0.0 puls
t
o
h
1s
0.01
10 μ
100 μ
D=
PDM
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
REJ03G1371-0310 Rev.3.10
May 13, 2010
10%
tr
90%
td(off)
tf
Page 5 of 9
HAT2285WP
Preliminary
 MOS2 & Schottky Barrier Diode
Power vs. Temperature Derating
Maximum Safe Operation Area
Drain Current ID (A)
1000
30
20
10
10
μs
10
0
1
PW
μs
ms
DC = 1
10
Op 0 m
era s
tio
n
1 Operation in
this area is
limited by RDS(on)
0.1
Tc = 25°C
0
20
50
100
150
200
10
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
Pulse Test
5V
VDS = 10 V
Pulse Test
2.8 V
2.6 V
10
2.4 V
10
Tc = 75°C
25°C
−25°C
VGS = 2.3 V
0
5
0
10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
160
Pulse Test
120
80
ID = 5 A
40
2A
1A
0
2
4
6
8
10
12
Gate to Source Voltage VGS (V)
REJ03G1371-0310 Rev.3.10
May 13, 2010
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
100
Case Temperature Tc (°C)
10 V
Drain Current ID (A)
100
0.01 1 shot Pulse
0.1
1
Drain Current ID (A)
Channel Dissipation Pch (W)
40
100
Pulse Test
VGS = 4.5 V
10
10 V
1
0.1
1
10
100
Drain Current ID (A)
Page 6 of 9
Preliminary
Forward Transfer Admittance |yfs| (S)
50
Pulse Test
40
30
1 A, 2 A, 5 A
20
VGS = 4.5 V
1 A, 2 A, 5 A
10
10 V
0
–25
0
25
50
75
100 125 150
20
10
5
25°C
2
75°C
1
0.5
VDS = 10 V
Pulse Test
0.2
0.1
0.1 0.2 0.5 1
2
5 10 20
50 100
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
10
5
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
2
10000
5000 VGS = 0
f = 1 MHz
2000
Ciss
1000
500
Coss
200
100
Crss
50
20
10
0.3
1
3
10
30
0
100
5
10
15
20
25
30
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VGS
VDD = 25 V
10 V
5V
10
8
6
VDS
20
4
VDD = 25 V
10 V
5V
10
10
20
30
2
0
40
Gate Charge Qg (nC)
REJ03G1371-0310 Rev.3.10
May 13, 2010
50
100
Switching Time t (ns)
ID = 22 A
40
0
Tc = –25°C
Body-Drain Diode Reverse
Recovery Time
20
30
50
Drain Current ID (A)
50
1
0.1
100
Case Temperature Tc (°C)
100
50
Drain to Source Voltag VDS (V)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source On State Resistance
vs. Temperature
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
HAT2285WP
50
td(off)
tr
20
td(on)
10
5
tf
2
VGS = 10 V, VDD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1
2
5
10 20
50 100
Drain Current ID (A)
Page 7 of 9
HAT2285WP
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
10 V
VGS = 0 V, –5 V
5V
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
θch – c = 8.33°C/W, Tc = 25°C
0.1 0.1
0.05
2
0.03 0.0
1
lse
0
.
0
pu
t
ho
1s
0.01
10 μ
100 μ
D=
PDM
PW
T
PW
T
1m
100 m
10 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
REJ03G1371-0310 Rev.3.10
May 13, 2010
10%
tr
90%
td(off)
tf
Page 8 of 9
HAT2285WP
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PWSN0008DB-A
Previous Code
WPAK-DV
MASS[Typ.]
0.07
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK-D
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
1.7
1.7
0.5
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.545Typ
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part Name
HAT2285WP-EL-E
Quantity
2500 pcs
REJ03G1371-0310 Rev.3.10
May 13, 2010
Shipping Container
Taping
Page 9 of 9
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Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
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11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0