PM75B4L1C060 Photo Voltaic IPM H-Bridge 75A 600V

PM75B4L1C060
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Photo Voltaic IPM
H-Bridge
75 Amperes/600 Volts
A
D
F
E
1
5
N
G
G
G
G
G
G
G
G
G
G
G
G
G
G
F
F
F
9
M
P
13
J
B
H (2 TYP.)
C
K
B
P
N
L
U
Q
W
L
L
F
V
R
L
L
T
S (19 TYP.)
TERMINAL
CODE
C
1 VUPC
V
U
2 UFO
3 UP
4 VUP1
5 VVPC
VVPC VFO
NC FO VNC NC
VN1
NC NC NC NC
UN
VN
VUPC
VP VVP1
UFO
UP
VUP1
6 VFO
7 VP
8 VVP1
9 NC
1.5k
1.5k
1.5k
10 NC
VCC
IN
FO
SI
OUT
IN
FO
VCC
OT
GND GND
OT
SI
OUT
GND GND
IN
FO
VCC
SI
OUT
OT
GND GND
IN
FO
VCC
SI
OUT
GND GND
11 NC
OT
12 NC
13 VNC
14 VN1
15 NC
16 UN
17 VN
18 NC
19 FO
B
N
W
V
U
P
Outline Drawing and Circuit Diagram
Dim.
A
B
C
D
E
F
G
H
J
K
Inches
3.54
1.97
0.98
3.15
0.20
0.39
0.08
0.17 Dia.
0.81
0.91
Millimeters
90.0
50.0
25.0
80.0
5.0
10.0
2.0
4.3 Dia.
20.5
23.0
Dim.
L
M
N
P
Q
R
S
T
U
V
Inches
0.47
0.012
0.57
0.26
0.02
0.56
0.02 Sq.
0.08
0.51
0.65
Millimeters
12.0
0.3
14.6
6.7
0.5
14.2
0.5 Sq.
2.0
13.0
16.5
Description:
Powerex Intellimod™ Photo
Voltaic Intelligent Power Modules
are isolated base modules
designed for single phase power
switching applications. Built-in
control circuits provide optimum
gate drive and protection for the
IGBT and free-wheel diode
power devices.
Features:
£ Complete Output Power
Circuit
£ Gate Drive Circuit
£ Protection Logic
–Short Circuit
–Over Temperature
Using On-chip
Temperature Sensing
–Under Voltage
£ Low Loss Using Full Gate
CSTBT IGBT Chip
Applications:
£ PV Inverters
£ PV UPS
£ PV Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM75B4L1C060 is a 600V,
75 Ampere PV-IPM.
Type
Current Rating
Amperes
VCES
Volts (x 10)
PM75 60
03/11 Rev. 0
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
PM75B4L1C060
Photo Voltaic IPM
H-Bridge
75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M4 Mounting Screws (Typical)
Module Weight (Typical)
SymbolPM75B4L1C060Units
Tj
-20 to 150
°C
Tstg
-40 to 125
°C
—
15
in-lb
—
135
Grams
Supply Voltage, Surge (Applied between P-N)
VCC(surge)500 Volts
Operation of Short Circuit Protections VCC(prot.)450 Volts
(Applied between P-N, VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start)
Isolation Voltage (60Hz, Sinusoidal, RMS, Charged Part to Base, AC 1 Minute)
VISO 2500Volts
Inverter Part
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current (TC = 25°C)
Collector Current (Pulse)
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C, FWDi Current)
Emitter Current (Pulse, FWDi Current)
VCES 600Volts
IC
75Amperes
ICRM
150Amperes
Ptot 201Watts
IE
75Amperes
IERM
150Amperes
Control Part
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VN1-VNC)VD 20Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, UN- VN- WN-Br-VNC)VCIN 20Volts
Fault Output Supply Voltage VFO 20Volts
(Applied between UFO-VUPC, VFO-VVPC, FO-VNC)
Fault Output Supply Current (Sink Current at UFO, VFO, FO Terminals)IFO 20mA
2
03/11 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
PM75B4L1C060
Photo Voltaic IPM
H-Bridge
75 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
VCE(sat)
VD = 15V, IC = 75A, VCIN = 0V,
—
2.2
2.7
Volts
—
2.2
2.7
Volts
—
2.4
3.3
Volts
Inverter Part
Collector-Emitter Saturation Voltage
Pulsed, Tj = 25°C
VD = 15V, IC = 75A, VCIN = 0V,
Pulsed, Tj = 125°C
Emitter-Collector Voltage
Switching Times
VEC
ton
trr
Collector-Emitter Cutoff Current
IE = 75A, VD = 15V, VCIN = 15V
VD = 15V, VCIN = 0 ↔ 15V
0.1
0.5
1.2
µs
—
0.1
0.2
µs
tC(on)
VCC = 300V, IC = 75A,
—
0.15
0.3
µs
toff
Tj = 125°C, Inductive Load
—
1.1
2.0
µs
tC(off)
—
0.2
0.4
µs
ICES
VCE = VCES, VD = 15V, VCIN = 15V, Tj = 25°C —
—
1.0
mA
—
—
10
mA
VD = 15V, VCIN = 15V, VN1-VNC
—
6.5
12
mA
VD = 15V, VCIN = 15V, V*P1-V*PC
—
1.6
4
mA
VCE = VCES, VD = 15V,
VCIN = 15V, Tj = 125°C
Control Part
Circuit Current
ID
Input ON Threshold Voltage
Vth(on)
Applied between UP-VUPC,
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
VP-VVPC, UN- VN- WN-Br-VNC
1.7
2.0
2.3
Volts
SC
-20°C ≤ Tj ≤ 125°C, VD = 15V
112
—
—
Amperes
toff(SC)
VD = 15V
—
0.2
—
µs
Short Circuit Trip Level
Short Circuit Current Delay Time
Over Temperature Protection
OT
Trip Level
135
—
—
°C
(Detect Temperature of IGBT)
OT(hys)
Hysteresis
—
20
—
°C
Supply Circuit Under-voltage Protection
UVt
Trip Level
11.5
12.0
12.5
Volts
(-20°C ≤ Tj ≤ 125°C)
UVr
Reset Level
—
12.5
—
Volts
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
tFO
VD = 15V
1.0
1.8
—
ms
Fault Output Pulse Width*2
*2 Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower devide operate to protect it.
Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level.
03/11 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
PM75B4L1C060
Photo Voltaic IPM
H-Bridge
75 Amperes/600 Volts
Thermal Characteristics, Tj = 25°C unless otherwise specified
Characteristic
Junction to Case Thermal Resistance
Contact Thermal Resistance
Symbol
Min.
Typ.
Max.
Units
Rth(j-c)Q
Inverter IGBT (Per 1
Element)*1
—
—
0.62
°C/Watt
Rth(j-c)D Inverter FWDi (Per 1 Element)*1
—
—
1.06
°C/Watt
—
0.060
—
°C/Watt
Value
Units
Rth(c-f)
Condition
Case to Fin (Per 1
Element)*1,
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Inverter Supply Voltage
VCC
Applied across P-N Terminals
≤450
Volts
Control Supply Voltage*3
VD
Applied between VUP1-VUPC,
15.0 ± 1.5
Volts
Input ON Voltage
VCIN(on)
Applied between UP-VUPC,
≤0.8
Volts
Input OFF Voltage
VVP1-VVPC, VN1-VNC
VCIN(off)
VP-VVPC, UN- VN- WN-Br-VNC
≥9.0
Volts
PWM Input Frequency
fPWM
Using Application Circuit Input Signal of IPM,
≤20
kHz
Arm Shoot-through Blocking Time
tDEAD
≥2.0
µs
3-Phase Sinusoidal PWM VVVF Inverter
For IPMs Each Input Signals
*1 When using this value, Rth(s-a) should be measured just under the chips.
*3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak.
4
03/11 Rev. 0