C1 E2 E1 G1 C2E1 G2 E2

QIC1208001
Powerex Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
Dual AC Switch IGBT Module
1200V 75A
Description:
Powerex Dual AC Switch IGBT Module designed
specially for customer applications.
Features:
•
Isolated Mounting
•
Low Drive Requirement
•
Internal Series Gate Resistors
•
Low Vce(sat)
•
Rectifier Grade Low Vf Diodes
Dim
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
E1
G1
Page 1
Millimeters
94.0
80.0 ±0.25
48.0
30.0 Max
23.0
21.2
18.0
17.0
16.0
13.0
12.0
7.5
7.0
Dia. 6.5
6.5
M5
4.0
C2E1
E2
C1
Preliminary
Inches
3.70
3.150 ±0.01
1.89
1.18 Max.
0.90
0.83
0.71
0.67
0.63
0.51
0.47
0.30
0.28
0.256 Dia.
0.26
--0.16
E2
G2
09/19/2006
QIC1208001
Dual AC Switch IGBT Module
1200V 75A
Powerex Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
Electrical Charactistics
Characteristics (Each IGBT or Each Diode)
Symbol
Parameter
Min
Typ.
Max.
Units
VCES
Collector Emitter Voltage (G-E SHORT)
1200
VGES
Gate Emitter Voltage
K20
V
IGES
Gate Leakage Current VGE=VGES VCE=0
0.5
uA
ICES
Collector-Cutoff Current VCE=600V VGE=0
1
mA
VGE(th)
Gate Emitter Threshold Voltage IC=7.5mA VCE=10V
7.5
V
IGBT
V
4.5
6.0
CIES
Input Capacitance VCE=10V VGE=0 f=1Mhz
15
nF
COES
Output Capacitance VCE=10V VGE=0 f=1Mhz
5.3
nF
CRES
Reverse Transfer Capacitance VCE=10V VGE=0 f=1Mhz
3
nF
Rth(j-c)
Thermal Impedance Junction to case (Per IGBT)
0.21
C/W
Thermal Impedance Junction to case (Per Diode)
0.30
C/W
DIODE
Rth(j-c)
PACKAGE
Vrms
V Isolation
2500
V
Mounting torque M6 Mounting screw
4
Nm
Terminal torque, M6 Terminal Screw
6
Nm
0.08
C/W
Module weight
Rth(jc-s)
190
Thermal Impedance Case to Sink
Typical IGBT Collector-Emitter Saturation Voltage
Typical Diode Vf
5
1.5
4
1.2
Vf (Volts)
Vce(sat) (Volts)
g
0.9
3
0.6
2
25C
25C
125C
1
125
C
0.3
0
0
0
25
50
75
100
125
Current (Amperes)
Preliminary
150
0
25
50
75
100
Current (Amperes)
Page 2
09/19/2006
125
150