A-POWER AP3R604GH-HF

AP3R604GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
40V
RDS(ON)
3.7mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on□
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current (Chip)
[email protected]=25℃
[email protected]=100℃
125
A
Continuous Drain Current
4
75
A
Continuous Drain Current
4
75
A
300
A
104
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
62.5
℃/W
Data & specifications subject to change without notice
1
201206131
AP3R604GH-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=40A
-
-
3.7
mΩ
VGS=4.5V, ID=30A
-
-
5.6
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=40A
-
100
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
28
45
nC
Qgs
Gate-Source Charge
VDS=32V
-
5.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
10
-
ns
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
36
-
ns
tf
Fall Time
VGS=10V
-
105
-
ns
Ciss
Input Capacitance
VGS=0V
-
2750 4400
pF
Coss
Output Capacitance
VDS=25V
-
600
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
175
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=40A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
58
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3R604GH-HF
300
160
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
250
200
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
V G = 4.0 V
150
100
10V
7.0V
6.0V
5.0V
120
V G =4.0V
80
40
50
0
0
0.0
1.0
2.0
3.0
4.0
0.0
5.0
1.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
4.4
I D =30A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
4
3.6
3.2
1.6
1.2
0.8
2.8
0.4
2.4
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.6
30
1.2
Normalized VGS(th)
IS(A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =25 o C
T j =150 o C
0
o
V GS , Gate-to-Source Voltage (V)
20
10
0.8
0.4
0
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3R604GH-HF
10
f=1.0MHz
4000
V DS =20V
V DS =24V
V DS =32V
6
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =40A
8
2000
4
1000
C oss
2
C rss
0
0
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
area limited by
RDS(ON)
100us
ID (A)
100
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4