Datasheet - Diodes Incorporated

A Product Line of
Diodes Incorporated
Green
ZXMN6A11G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits






ID
V(BR)DSS
RDS(on)
TA = +25°C
120mΩ @ VGS= 10V
4.4A
180mΩ @ VGS= 4.5V
3.5A
60V
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.





Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Uninterrupted Power Supply






Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
D
SOT223
G
S
Pin Out - Top
View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Product
ZXMN6A11GTA
Notes:
Marking
See below
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZVN
ZXMN
ZXMN
6A11
4310
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
YWW
SOT223
ZXMN6A11 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 6)
TA = +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
Value
60
±20
Units
V
4.4
ID
3.5
3.1
IDM
IS
ISM
15.6
5
15.6
A
Symbol
Value
2.0
16
3.9
31
62.5
32.0
9.8
-55 to +150
Unit
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Note 5)
PD
(Note 6)
(Note 5)
(Note 6)
(Note 8)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t ≤ 10 seconds.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300μs.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Max Power Dissipation (W)
ID Drain Current (A)
Thermal Characteristics
10 RDS(on)
2.00
Limited
1.50
1
1.25
DC
1.00
1s
100m
100ms
T amb=25°C
10m
25mm x 25mm
1oz FR4
1.75
0.75
10ms
25mm x 25mm
1oz FR4
0.50
1ms
100µs
1
0.25
0.00
10
VDS Drain-Source Voltage (V)
0
20
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Single Pulse
T amb=25°C
25mm x 25mm
1oz FR4
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document number: DS33556 Rev. 6 - 2
100 120 140 160
100
Pulse Width (s)
ZXMN6A11G
80
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
T amb=25°C
25mm x 25mm
1oz FR4
60
Temperature (°C)
Safe Operating Area
60
40
Pulse Power Dissipation
3 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60






1.0
100
V
µA
nA
ID = 250A, VGS = 0V
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS(th)
RDS (ON)
gfs
VSD
trr
Qrr

0.105
0.150
4.9
0.85
21.5
20.5
3.0
0.120
0.180

0.95


V
Static Drain-Source On-Resistance (Note 6)
1.0






ID = 250A, VDS = VGS
VGS = 10V, ID = 2.5A
VGS = 4.5V, ID = 2A
VDS = 15V, ID = 2.5A
IS = 2.8A, VGS = 0V, TJ = +25°C
IS = 2.8A, di/dt = 100A/µs
TJ = +25°C
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf











330
35.2
17.1
3.0
5.7
1.25
0.86
1.95
3.5
8.2
4.6











Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse Recovery Time (Note 7)
Reverse Recovery Charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes:
Ω
S
V
ns
nC
pF
Test Condition
VDS = 40V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V
nC
ns
VGS = 10V
VDS = 15V
ID = 2.5A
VDD = 30V, ID = 2.5A,
RG = 6, VGS = 10V
6. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Typical Characteristics
T = 150°C
10V 5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
4V
3.5V
1
3V
VGS
0.1
2.5V
0.1
1
2.5V
4
5
VGS Gate-Source Voltage (V)
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
0.1
1.8
5V
10V
0.1
T = 25°C
10
On-Resistance v Drain Current
Document number: DS33556 Rev. 6 - 2
RDS(on)
1.4
1.2
1.0
VGS(th)
0.8
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance
()
4.5V
VGS
ZXMN6A11G
ID = 2.5A
Tj Junction Temperature (°C)
1
1
VGS = 10V
1.6
Typical Transfer Characteristics
ID Drain Current (A)
10
Output Characteristics
T = 25°C
4V
1
VDS Drain-Source Voltage (V)
1
3.5V
2V
0.1
T = 150°C
3V
VGS
0.1
10
VDS = 10V
3
3V
1
Output Characteristics
2
4V
3.5V
VDS Drain-Source Voltage (V)
10
10V 5V
10
10
1
T = 150°C
T = 25°C
0.1
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
C Capacitance (pF)
500
VGS = 0V
400
f = 1MHz
300
CISS
COSS
200
CRSS
100
0
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
Typical Characteristics (cont.)
10
ID = 2.5A
8
6
VDS = 30V
4
2
0
0
1
2
3
4
Q - Charge (nC)
5
6
Gate-Source Voltage v Gate Charge
Test Circuit
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
6 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version
D
Q
b1
C
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
0°
-1
0°
e
A1
7°
7°
A
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version
X1
Y1
C1
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y2
Y
X
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
C
7 of 8
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A11G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
8 of 8
www.diodes.com
March 2015
© Diodes Incorporated