Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19 Rev 1.5 Update demo board picture Page 4,5 Replace ACT512 16.8V/0.7A with 5V1.6A CC/CV charger Cover page Change title -2For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions AC/DC Converters – ActiveQRTM Applications • • • AC/DC Adaptors/Chargers for Cell Phones, Cordless Phone, PDAs, E-books Adaptors for Portable Media Player, DSCs, Set-top boxes, DVD players, records Linear Adapter Replacements ACT510 ACT511 ACT512 Topology QR QR CCM&QR Power <30W <60W <60W Standby Power <100mW <100mW &30mW <100mW Package SOT23-6 SOT23-6 SOT23-6 Max Frequency 130~160kHz 70~90KHz 70~90kHz Frequency Foldback Y Y Y Frequency Jittering Y Y Y Auto Restart Y Y Y Soft-Start Y Y Y VDD OVP Y Y Y Lm Compensation Y Y NO OLP Accuracy +/-15% +/-15% Brown Out Protection Y Y Y OTP Y Y Y Short Circuit Protection Y Y Y Short Winding Protection Y Y Y Open Loop Protection Y Y Y +/-20% c: QR is quasi-resonant. Table of Contents 1. ACT512 5V1.6A Universal CC/CV Charger……………………….……………..…….……..……………………..……............5 2. ACT510 5V 2A Universal Adaptor……….………………………..…………………..………….…………………….………….7 3. ACT512 5V 3A Universal Adaptor Low Profile…………….………..………………..…………………..…………………...…..9 4. ACT511 5V 3A Universal Adaptor Standby Power < 30mW …......………………..…………………..…………………...….11 5. ACT512 5V 4A Universal Adaptor………………………………………..…….….….……………………….………..…….......13 6. ACT512 5V 4A Universal Adaptor with Synchronous Rectification ..…….…...….……………………………..…..…….......15 7. ACT511 12V 1A Universal Adaptor ………………………… ………………………..…………………..……..……………… 17 8. ACT512 12V 2A Universal Adaptor..…………...…………...………...…………………..………….………….…….………...19 9. ACT512 15V 3A Universal Adaptor………………………………….…………..…….…….…………………………..…….....21 10. ACT512 Multiple Output 7.5W Set-top Box Universal Adaptor………...…….…...……..……….………….…….…………23 11. ACT512 Multiple Output 24W Set-top Box Universal Adaptor………...……..………..………….………….…….…………25 -3For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Active-Semi (Shanghai) Office Contact Information Fast Technical Support Contact Person: Peter (Director of Product Line) Tel: (86-21) 5108 2797#865; Mobile Phone: 135 8558 2743; E-mail box: [email protected]. Address: RM1202,Sunplus Building,No.1077 Zuchongzhi Road, Zhangjiang High Tech Park, Shanghai 201203, China -4For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/1.6A UNIVERSAL CC/CV CHARGER Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 <150mW 5V 8W CCM&QR flyback Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Normal size Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. W*L*H=29mm*53.5mm*20.5mm Tiny SOT23-6 package. Schematic Picture 1 -5For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Terminal Bill of Materials REF DESCRIPTION IC1 IC, ACT512, SOT23-6 Active-Semi Insulation Start Finish Turns Size*QTY P1 2 3 66 2UEW 0.2Φ*1 SH1 NC 5 15 2UEW S1 9 10 11 TEX-E Type Layer Thick/ Wide Layer 2 0.025*11W 1 0.15Φ*3 1 0.025*11W 1 0.5Φ*1 1 0.025*11W 1 1 Capacitor, Electrolytic, 10µF/400V, 10 × 16mm KSC S2 10 8 20 TEX-E 0.2Φ*1 1 0.025*11W C4 Capacitor, Electrolytic,6.8µF/50V, 5 × 11mm KSC P2 4 5 30 2UEW 0.2Φ*1 1 0.025*11W 1 C3 Capacitor, Ceramic,1000pF/500V,SMD POE P3 3 1 66 2UEW 0.2Φ*1 2 0.025*11W 2 C10 Capacitor, Electrolytic,10µF/35V,5*11mm KSC SH2 core 5 3 wire 0.25Φ*1 1 Capacitor, Ceramic, 1000PF/50V,0805,SMD POE C8,C11 C5 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C6 Capacitor, Electrolytic,680µF/10V,8*16mm KSC C7 Capacitor, Electrolytic,330µF/10V,8*12mm KSC C9 Capacitor, Ceramic, 100PF/50V,0805,SMD POE BD1 Bridge_Diode, 1A1000V,SOT-4 D2,D4,D5 D6,D7,Dgate RS1M SMD Good-Ark Diode L4148 SMD Good-Ark Diode, Schottky, 45V/10A, SBS1045, SOT L1 DM Inductor, 3mH, Dr L2 DM Inductor, 3µH, R5 Q1 Mosfet Transisor, 04N65, TO-220 Infineon PCB, L*W*T =49x68x1.6mm, Cem-1, Rev:A Jintong F1 R1,R2 Item SoKa Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 1 and 2at 1Vac & 1kHz 1.6mH±%7 3 P1 Leakage Inductance Inductance between pins1 with pins2 and 9-8-10,5-4 shorted 75µH SoKa Fusible, 1A/250V TY-OHM Chip Resistor,1M, SMD 0805, 5% TY-OHM metal Resistor,750K Ω,1206,5% TY-OHM R4 Chip Resistor, 100Ω, 0805, 5% TY-OHM Chip Resistor,22Ω, 0805, 5% TY-OHM R6 Chip Resistor,46.4kΩ,1206, 1% TY-OHM R7 Chip Resistor, 9.1KΩ, 0805, 1% TY-OHM R8 Chip Resistor, 2Ω, 1206, 1% TY-OHM R9 Chip Resistor, 10Ω,0805, 5% TY-OHM Chip Resistor, 3.3kΩ,0805, 5% TY-OHM R11,R12,R25 Electrical specifications Vashay R3 R5,R15,R22,R 26 ♦ Vashay D8 PCB1 Note:1,Core and Bobbin:EE16 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1,S2 are secondary 3,Reverse the direction of bobbin when do the S1,S2 R10,R21 Chip Resistor, 1KΩ,0805, 5% TY-OHM R14,R20 Chip Resistor, 10kΩ, 0805, 1% TY-OHM R13 Chip Resistor, 10.5KΩ, 0805, 1% TY-OHM R19 Chip Resistor,13.7KΩ, 0805,5% TY-OHM R18 Chip Resistor,470Ω, 0805,1% TY-OHM R24 Chip Resistor,100Ω, 0805, 5% TY-OHM R23A/B Chip Resistor,0.1Ω, 1206, 1% TY-OHM Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) C1,C2 MFTR Wire Winding 150.00 100.00 50.00 0.00 90 115 230 264 Input Voltage (VAC) STANDBY POWER V-I Characteristic Vs Vin(25℃) 6.00 T1 Output Voltage(V) 5.00 90V 4.00 115V 3.00 230V 264V 2.00 EE16,Lp=1.6mH Y capacitance, 1000pF/400V,Y1 High limit Hiccup 1.00 CY1 Low limit SEC U2 Opto-coupler, PC817C CTR=200 dip-4 U3 IC LM358 SOP-8 ST U4 Voltage Regulator, TL431A, Vref=2.5V TO-92 ST 0.00 Sharp 0 250 500 750 1000 1250 1500 1750 Output Current(mA) CC/CV CURVE Efficiency Vs Po 90.00% Transformer Efficiency 85.00% 80.00% 75.00% 115V 230V 70.00% 65.00% 60.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY ♦ Build up EVALUATION KITS ACT512_5V1.6A_Rev1.0 -6For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT510 5V/2A UNIVERSAL ADAPTOR Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT510 <100mW 5V 10W QR flyback Key Features • Optimized advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line and inductance compensation, provide high accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot. Normal size Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. W*L*H=29mm*53.5mm*20.5mm Tiny SOT23-6 package. Schematic Picture 2 -7For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials Core 1 REF DESCRIPTION MFTR C1 Capacitor, Electrolytic, 10µF/400V, 12x16mm RUBYCON C1 Capacitor, Electrolytic, 15µF/400V,12x16mm RUBYCON P1 SH3 Co re wi t h a c o p p e r wi re c o n n e c te d t o p i n 5 3 10 2 S1 SH1 SH2 4 P2 7 10 S1 7 C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,10µF/35V, 5x11mm POE C5 Capacitor, Ceramic,1000PF/100V, 0805,SMD POE C6 Capacitor, Electrolytic, 330µF/6.3V, 6.3x8mm KSC C7 Capacitor, Electrolytic, 820µF/6.3V, 6.5x15mm Capacitor, Ceramic, 0.33µF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 100pF/25V, 0805,SMD POE C10 Capacitor, Ceramic, 10µF/35V, 0805,SMD Open POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D2 Diode, Ultra Fast, LL4148, SMD ,75V/0.2A, PANJIT Diode, Schottky, 45V/10A, S10U45S, SMD Diodes Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D5 Diode, Ultra Fast, LL4148, SMD Open Good-Ark L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 0.55*5T, 5*7,Dip SoKa D3 D4 LF2 CM Filter,0.55*2/6T,R6K,Dip SoKa Q1 Mosfet Transistor, 4N65,TO-262 Infineon PCB PCB, L*W*T=53x29x1.6mm,Cem-1,Rev:A Jintong F1 Fuse,1A/250V TY-OHM R1,R2 Chip Resistor, 1.0MΩ 1206, 5% R3 Carbon Resistor, 750kΩ, 0805, 5% TY-OHM R4 Chip Resistor, 100Ω, 0805, 5% TY-OHM R5,R9, R15 Chip Resistor, 22Ω, 0805, 5% TY-OHM R6 Chip Resistor, 46.4 kΩ, 0805,1% TY-OHM SH3 Build up Terminal KSC C8 P1 5 Winding Pin5 NC Pin3 Pin2 SH1 P2 ♦ NC Pin5 Pin1 Pin3 Pin5 Pin4 SH2 P1 P1 Start Wire Insulation Thick/ Wide Finish Turns Type Size*QTY Layer P1 2 3 51 2UEW 0.27Φ*1 2 0.025*11W Layer SH1 NC 5 15 2UEW 0.15Φ*3 1 0.025*11W S1 7 10 5 TEX-E 0.55Φ*2 1 0.025*11W 2 P2 4 5 11 2UEW 0.20Φ*3 1 0.025*11W 2 P1 3 1 30 2UEW 0.27Φ*1 1 0.025*11W 2 SH2 5 NC 15 0.15Φ*3 1 0.025*11W 2 SH3 CORE 5 2 2UEW Copper wire 0.2Φ*1 1 0.025*11W 2 2 Note:1,Core and Bobbin:EE16 2,SH1,SH2,SH3 are shielding; P1 & P2 are primary and S1 is secondary ♦ Item Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000Vac 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 0.54mH+/-7% 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-5 and 7-10 shorted 25µH Typical Performance Characteristics Standby Power Vs Input Voltage Chip Resistor, 9.1kΩ, 0805, 1% TY-OHM R8 Chip Resistor, 1.37Ω,1206 , 1% TY-OHM R10 Chip Resistor, 200Ω, 0805,5% TY-OHM R11 Chip Resistor, 1.5kΩ, 0805, 5% TY-OHM R12 Chip Resistor, 3.3kΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10.7kΩ, 0805, 1% TY-OHM R14 Chip Resistor, 10kΩ, 0805, 1% TY-OHM R16 Chip Resistor, 10Ω, 0805, 5% TY-OHM R17 Chip Resistor, 2.2kΩ, 0805, 5% TY-OHM T1 Transformer, Lp=0.54mH, EE16 U1 IC, ACT510,SOT23-6 Active U2 OPOT PC817C,CTR=200~300% Infineon IC3 TL431A TO-92 Infineon 150.00 100.00 50.00 0.00 85 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po 85.00% Efficiency R7 Standy Power m(W) TY-OHM 80.00% 115V 75.00% 230V 70.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY EVALUATION KITS ACT510_5V2A_Rev1.1 -8For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/3A UNIVERSAL ADAPTOR LOW PROFILE Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 <100mW 5V 15W CCM&QR flyback Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Mini size W*L*H=38mm*38mm*22mm Tiny SOT23-6 package. Schematic Picture 3 -9For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 10µF/400V, 10 × 14mm KSC C2 Capacitor, Electrolytic, 10µF/400V, 10 × 14mm POE C3 Capacitor, Electrolytic, 680µF/16V, 8 × 11mm KSC C4 Capacitor, Electrolytic,6.8µF/35V, SMD 0805 KSC C5 Capacitor, Ceramic, 100PF/50V,0603,SMD POE C6 Capacitor, Ceramic,1000pF/100V,0603,SMD POE C7 Capacitor, Ceramic,470µF/10V,1812,SMD POE C0 Capacitor, Ceramic,100nF/100V,0603,SMD C13 Capacitor, Ceramic,1000pF/500V,0805,SMD ♦ Build up Terminal D3 Dgate L1 Q1 PCB1 Good-Ark RS1M SMD Good-Ark Diode, Schottky, 60V/30A, SBR3060, DO-220 Good-Ark Diode L4148 SMD Good-Ark Axial Inductor, 1.5mH, 5*7, DIP Mosfet Transisor, 04N65, TO-220 PCB, L*W*T =38x38x1mm, Cem-1, Rev:A R1 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R2 Chip Resistor,1M Ω, SMD 1206, 5% TY-OHM R3 Chip Resistor, 4.7Ω, 0805, 5% TY-OHM R3B Chip Resistor, 22Ω, 0805, 5% TY-OHM R4 Chip Resistor,60.4kΩ, 0603, 1% TY-OHM R5 Chip Resistor,10.2kΩ, 0603, 1% TY-OHM R6 Chip Resistor, 10 Ω, 0603, 5% TY-OHM R7 Chip Resistor, 1kΩ,0603, 5% TY-OHM R8 Chip Resistor, 1KΩ, 0603, 5% TY-OHM R0 Chip Resistor, 3kΩ, 0603, 5% TY-OHM R9 Chip Resistor, 1.0Ω, 1206, 1% TY-OHM R10,R11 Chip Resistor, 10kΩ, 0603, 1% TY-OHM R12 Chip Resistor, 100Ω, 0805,5% TY-OHM R13 Chip Resistor,750kΩ, 0805,5% TY-OHM Chip Resistor,360Ω, 0603, 5% TY-OHM R14 L1 RM6 lm=0.8mH CY1 Y capacitance, 1000pF/400V,Y1 IC3 Opto-coupler, PC817C CTR=200 SMD IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 Size*QTY 32 2UEW 0.18Φ*1 SH1 3 NC 15 2UEW S1 B A 7 2UEW P2 4 3 17 P3 F 1 32 ♦ Jintong TY-OHM Turns F Layer Layer 1 0.025*11W 2 0.12Φ*3 1 0.025*11W 0.45Φ*2 1 0.025*11W 2 2UEW 0.15Φ*2 1 0.025*11W 2 2UEW 0.18Φ*1 1 0.025*11W 2 Type Electrical specifications Item ST Fusible, 2A/250V Finish 2 Thick/ Wide Note:1,Core and Bobbin:RM6 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 SoKa F1 Start Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 0.8mH±%7 3 P1 Leakage Inductance Inductance between pins 3 with pins4and AB shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) D1,D2 MB6S 1.5A/400V Insulation P1 120 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po ST 85.00% Efficiency BD POE Wire Winding SEC Sharp ST 80.00% 115V 230V 75.00% 70.00% 65.00% 60.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY EVALUATION KITS ACT512_5V3A_Rev1.1 -10For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT511 5V/3A UNIVERSAL ADAPTOR STANBY POWER 30mW Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT511 <30mW 5V 15W QR flyback Key Features • Optimized advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line and inductance compensation, provide high accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot. Normal size Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. W*L*H=29mm*53.5mm*26mm Tiny SOT23-6 package. Schematic Picture 4 -11For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials 1 REF C1,C2 C11 DESCRIPTION Capacitor, Electrolytic, 15µF/400V, 12x16mm Capacitor, Ceramic, 3.3µF/25V, 0805,SMD POE C4 Capacitor, Electrolytic,2.2µF/35V, 5x11mm POE C5 Capacitor, Ceramic,1000PF/50V, 0805,SMD POE C6.C7 Capacitor, Electrolytic, 820µF/6.3V, 8x8mm KSC C8 Capacitor, Ceramic, 0.33µF/25V, 0805,SMD POE 10 2 S1 SH1 SH2 4 P2 7 10 S1 7 P1 5 SH3 ♦ Build up Terminal C9 Capacitor, Ceramic, 1000pF/25V, 0805,SMD POE Pin5 NC Pin3 Pin2 SH1 P2 Winding NC Pin5 Pin1 Pin3 Pin5 Pin4 SH2 P1 P1 POE Capacitor, Ceramic, 1000pF/500V, 0805,SMD SH3 Co re wi th a c o p p e r wi re c o n n e c t e d to p i n 5 3 RUBYCON C3 Core P1 MFTR Start Wire Insulation Thick/ Wide Finish Turns Type Size*QTY Layer P1 2 3 70 2UEW 0.2Φ*1 2 0.025*11W Layer 17 2UEW 0.15Φ*3 1 0.025*11W 2 C10 Capacitor, Electrolytic,4.7µF/35V, 5x11mm POE SH1 NC 5 CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT S1 7 10 7 TEX-E 0.65Φ*1 1 0.025*11W P2 4 5 18 2UEW 0.15Φ*3 1 0.025*11W 2 P1 3 1 36 2UEW 0.2Φ*1 1 0.025*11W 2 SH2 5 NC 17 1 0.025*11W 2 CORE 5 2 2UEW Copper wire 0.15Φ*3 SH3 0.2Φ*1 1 0.025*11W 2 BD1 Z1 D2 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT Zener diode 1/2W 6.8V，SMD PANJIT Fast Recovery Rectifier, RS1G,200V/1.0A, RMA D3 Diode, Schottky, 40V/30A, SBR3040, TO220 D4 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA D5 Diode, Ultra Fast, LL4148, SMD L1 Axial Inductor, 1.5mH, 5*7,Dip PANJIT 2 Note:1,Core and Bobbin:EE19 2,SH1,SH2,SH3 are shielding; P1 & P2 are primary and S1 is secondary Diodes PANJIT Good-Ark ♦ SoKa Item TY-OHM 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000Vac 2 P1 Inductance Inductance between pins 1 and 2 at 1Vac & 1kHz 0.68mH+/-7% 3 P1 Leakage Inductance Inductance between pins 1 and 2 with pins 4-5 and 7-10 shorted 25uH F1 Fusible, 1A/250V LF2 CM Filter,500µH,0.55*2/6T,R5 Q1 Mosfet Transistor, 4N65,TO-262 Q2 Transistor, NPN, 400V,1.0A, D13002, TO-92 Huawei Q3 Transistor, NPN,40V,0.5A,2N3904, TO-92 Huawei PCB1 PCB, L*W*T=53x29x1.6mm,Cem-1,Rev:A SoKa ST Jintong F1 Fuse,1A/250V TY-OHM R1 Chip Resistor, 30MΩ 1206, 5% TY-OHM R2 Chip Resistor, 2MΩ, 1206, 5% TY-OHM Electrical specifications Description Condition Limits Typical Performance Characteristics Standby Power Vs Input Voltage R3 Carbon Resistor, 750kΩ, 0805, 5% TY-OHM R4 Chip Resistor, 100Ω, 0805, 5% TY-OHM R5 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R6 Chip Resistor, 57.6kΩ, 0805,1% TY-OHM R7 Chip Resistor, 11.8kΩ, 0805, 1% TY-OHM R8 Chip Resistor, 0.953Ω,1206 , 5% TY-OHM R9 Chip Resistor, 22Ω,1206 , 5% TY-OHM Chip Resistor, 1.5KΩ, 0805,5% TY-OHM R12 Chip Resistor, 3kΩ,0805 , 5% TY-OHM R13 Chip Resistor, 10.7kΩ, 0805, 1% TY-OHM R14 Chip Resistor, 10.5kΩ, 0805, 1% TY-OHM R16 Chip Resistor, 10Ω, 0805, 5% TY-OHM R17 Chip Resistor, 12KΩ,0805 , 5% TY-OHM R18 Chip Resistor, 100KΩ, 0805, 5% TY-OHM R19 Chip Resistor, 20KΩ,0805 , 5% TY-OHM T1 Transformer, Lp=0.68mH, EE19 U1 IC, ACT511,SOT23-6 Standy Power (mW) 40 30 20 10 0 90 U2 OPOT PC817C IC3 TL431 TO-92 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po 85.00% Efficiency R10,R11 115 80.00% 70.00% 65.00% 60.00% 25% Po Active-Semi. 115V 230V 75.00% 50% Po 75% Po 100% Po Output Power Sharp ST EFFICIENCY EVALUATION KITS ACT511_5V3A_30mW Rev1.0 -12For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/4A UNIVERSAL ADAPTOR Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 <100mW 5V 20W CCM&QR flyback Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Normal size W*L*H=44mm*84mm*24mm Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Schematic Picture 5 -13For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C2 Capacitor, Electrolytic, 47µF/400V, 18 × 20mm KSC C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,4.7µF/50V,5*11mm KSC C5 Capacitor, Electrolytic,1500µF/16V, 10*16mm POE C6 Capacitor, Electrolytic,1000µF/16V, 8*16mm POE C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE SH1 REF ♦ Build up Terminal Diode,1N4007 Good-Ark D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D6 RS1M SMD Good-Ark D8 Diode, Schottky,60V/30A, SBR3060, DO-220 Good-Ark Diode L4148 SMD Good-Ark Dgate LF1 L2 Q1 PCB1 Finish Turns Size*QTY 11 12 30 2UEW 0.27Φ*1 SH1 1 10 17 2UEW S1 B A 5 TEX-E P2 12 2 30 P3 3 1 SH2 CORE 1 ♦ DM Inductor, 3µH, R5 SoKa Item Mosfet Transisor, 04N65, TO-220 Layer Thick/ Wide Layer 1 0.025*11W 2 0.15Φ*3 1 0.025*11W 0.55Φ*2 1 0.025*11W 2 2UEW 0.27Φ*1 1 0.025*11W 2 13 2UEW 0.27Φ*2 1 0.025*11W 2 3 wire 0.25Φ*1 1 Type Note:1,Core and Bobbin:RM8 2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 SoKa Electrical specifications Description Condition Limits AUK 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 11and 2at 1Vac & 1kHz 1.2mH±%7 3 P1 Leakage Inductance Inductance between pins 11 and 2 with pins3-1 and A-B 75µH Jintong F1 Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM R2 metal Resistor,100K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,54.9kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 11.8KΩ, 0805, 1% TY-OHM Chip Resistor, 1MΩ, 5% TY-OHM R9 metal Resistor, 1Ω, 1W, 1% TY-OHM R10 Chip Resistor, 510Ω, 1/4W, 5% TY-OHM R12 Chip Resistor, 1.2KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,10KΩ, 0805,5% TY-OHM R15 Chip Resistor,10.7kΩ, 0805,1% TY-OHM R16 Chip Resistor,10.5KΩ, 0805, 1% TY-OHM Chip Resistor,51Ω, 0805, 5% TY-OHM R7,R8 Start CM Inductor, 30mH, UU10.5 PCB, L*W*T =84x44x1.6mm, Cem-1, Rev:A Insulation P1 Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) D1,D2,D3.D4 Wire Winding 150 100 50 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Rgate T1 Efficiency Efficiency Vs Po RM8 lm=1.2mH CX1 X capacitance, 0.1µF/400V,X1 NTC Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 SEC IC2 Opto-coupler, PC817C CTR=200 dip-4 Sharp IC3 Voltage Regulator, TL431A, Vref=2.5V TO-92 80.00% 115V 230V 70.00% 60.00% 50.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY ST EVALUATION KITS ACT512_5V4A_Rev1.0 -14For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 5V/4A UNIVERSAL ADAPTOR Input Voltage 90-264VAC Device ACT512 Standby Power <100mW 5V Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Output Voltage Output Power Topology 20W CCM,QR flyback, Synchronous Rectification Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Mini size W*L*H=43mm*50mm*23mm Tiny SOT23-6 package. Schematic Picture 6 -15For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials 1 REF DESCRIPTION IC1 IC, ACT512, SOT23-6 C1 Capacitor, Electrolytic, 47µF/400V, 18 × 20mm A P3 MFTR 7 S1 P1 Active-Semi 8 B NC KSC 9 C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,4.7µF/50V,5*11mm KSC P2 C5 Capacitor, Electrolytic,1500µF/16V, 10*16mm C6 Capacitor, Electrolytic,1000µF/16V, 8*16mm POE C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C10 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD GBL10 2A600V DIP Good-Ark D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D6 RS1M SMD Good-Ark Q2 Mosfet Transisor, 30A40V, IPD160N04L,TO-252 Diode L4148 SMD Good-Ark SoKa Q1 Mosfet Transisor, 4N65, 4A650V,TO-220 AUK PCB, L*W*T =51x43x1.6mm, Cem-1, Rev:A Wire Insulation Winding Start Finish Turns Size*QTY P1 8 7 30 2UEW 0.27Φ*1 SH1 12 11 17 2UEW S1 B A 5 TEX-E P2 9 12 13 P3 7 1 30 Layer Thick/ Wide Layer 1 0.025*11W 2 0.15Φ*3 1 0.025*11W 0.55Φ*2 1 0.025*11W 2 2UEW 0.27Φ*2 1 0.025*11W 2 2UEW 0.27Φ*1 1 0.025*11W 2 Type Note:1,Core and Bobbin:RM8 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 infineon CM Inductor, 20mH, UU9.8 Build up Terminal POE LF1 PCB1 ♦ POE BD1 Dgate 12 ♦ Electrical specifications Item Jintong Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac TY-OHM 2 P1 Inductance Inductance between pins 8 and 1 at 1Vac & 1kHz 1.2mH±%7 metal Resistor,100K Ω,DIP,1W,5% TY-OHM 3 P1 Leakage Inductance Inductance between pins 8 and 1 with pins9-12and A -B 75µH R3 Chip Resistor, 100Ω, 1206, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,54.9kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 9.1KΩ, 0805, 1% TY-OHM Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% R2 R7,R8 Chip Resistor, 1MΩ, 5% TY-OHM Chip Resistor, 2Ω, 1206, 1% TY-OHM R10 Chip Resistor, 510Ω, 0805, 5% TY-OHM R12 Chip Resistor, 1.2KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 3Ω, 0805, 5% TY-OHM R9,R9B Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) F1 150 100 50 0 90 Chip Resistor,1.3KΩ, 0805,5% TY-OHM R15 Chip Resistor,11.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,10.5KΩ, 0805, 1% TY-OHM R17 Chip Resistor,270KΩ, 0805, 1% TY-OHM R18 Chip Resistor,13KΩ, 0805, 1% TY-OHM R19 Chip Resistor,9.1KΩ, 0805, 1% TY-OHM 90.00% R20 Chip Resistor,17.8KΩ, 0805, 1% TY-OHM 88.00% R21 Chip Resistor,10Ω, 0805, 5% TY-OHM T1 CX1 Efficiency Vs Po TY-OHM RM8 lm=1.2mH Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 IC3 Opto-coupler, PC817C CTR=200 SM IC2 Voltage Regulator, TL431A, Vref=2.5V TO-92 86.00% 115V 84.00% 230V 82.00% 80.00% 25% Po X capacitance,0.22µF/400V,X1,L*W*H=17.5*5.6*12mm NTC 264 STANDBY POWER Efficiency Chip Resistor,300Ω, 0805, 5% 230 Input Voltage (VAC) R14 Rgate 115 50% Po 75% Po 100% Po Output Power EFFICIENCY SEC Sharp ST EVALUATION KITS ACT512_5V4A_Rev2.0 -16For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT511 12V/1A UNIVERSAL ADAPTOR Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT511 <100mW 12V 12W QR flyback Key Features • Optimized advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line and inductance compensation, provide high accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot. Mini size W*L*H=42mm*62mm*24mm Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Schematic Picture 7 -17For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT511 SOT23-6 C1 Capacitor, Electrolytic, 22µF/400V, 16 × 14mm KSC C3 Capacitor, Ceramic,1000pF/1KV POE C4 Capacitor, Electrolytic, 4.7µF/35V, 5 × 11mm KSC Capacitor, Electrolytic, 680µF/25V, 10 × 11.5mm KSC C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE C5,C6 Cfb Capacitor, Ceramic,100pF/50V,0805,SMD BD BDKBP210G D5,D6 Active-Semi D8 Diode, Schottky, 100V/10A, SB5100, DO-201 Good-Ark L1 CM Inductor, 40mH, UU9.8 Q1 Diode ,1N4148 Mosfet Transisor, 4N60, TO-220 SoKa SoKa Wire Winding Start Finish Turns P2 4 3 45 Type 2UEW Insulation Size*QTY Layer Thick/ Wide 1 0.025*11W NC 1 2UEW 1 0.025*11W 2 S1 B A 14T TEX-E Φ0.3*2 1 0.025*11W 2 P3 2 1 14T 2UEW Φ0.3*2 1 0.025*11W 2 P1 3 5 45 2UEW 1 0.025*11W 2 SH2 NC 1 0.9 1 0.025*11W 2 SH3 CORE 1 3 2UEW Copper wire Φ0.16*1 Coper 10mm Φ0.2*1 1 0.025*11W 2 0.9T Note:1,Core and Bobbin:EE19 2,SH1,SH2,SH3 are shielding; P1 & P2 are primary and S1 is secondary ST Jintong ♦ Fusible, 2A/250V TY-OHM Item Chip Resistor, 3.3kΩ, 0805, 5% TY-OHM 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac R1,R13 Chip Resistor, 22Ω, 0805, 5% TY-OHM 2 P1 Inductance Chip Resistor, 330Ω, 1206, 5% TY-OHM Inductance between pins 4and 5 at 1Vac & 1kHz 0.76mH±%7 Rgate R2 Carbon Resistor, 100kΩ, 2W, 5% TY-OHM 3 P1 Leakage Inductance Inductance between pins 4 and 5 with pins2-1 and A-B shorted 75µH F1 R12 PCB, L*W*T =65х43х1.6mm, Cem-1, Rev:A R3 Chip Resistor, 100Ω, 1206, 5% TY-OHM R4 Chip Resistor, 4.7Ω, 1206, 5% TY-OHM R5 Chip Resistor, 53.6kΩ, 1206, 1% TY-OHM R6 Chip Resistor,11kΩ, 0805, 1% TY-OHM R7,R8 Chip Resistor, 1MΩ, 1206, 5% TY-OHM R9 Chip Resistor,1.05Ω,1W, 1% TY-OHM R10 Chip Resistor, 510Ω, 0805, 5% TY-OHM R14 Chip Resistor,10kΩ, 0805, 5% TY-OHM R15 Chip Resistor, 24.3kΩ, 0805, 1% TY-OHM R16 Chip Resistor, 6.19kΩ, 0805, 1% TY-OHM T1 Transformer, LP =0.76mH, EE19 Electrical specifications Description 150 100 50 0 TY-OHM TVS Varistor, 10471 TY-OHM CX1, X capacitance, 0.22µF/400V,X1 CY1 Y capacitance,1000pF/400V,Y1 Voltage Regulator, TL431A, Vref=2.5V 230 264 Input Voltage (VAC) STANDBY POWER 90.00% E fficien cy Thermistor, SC053 U3 115 Efficiency Vs Po NTC Opto-coupler, PC817C CTR=200 Limits Standby Power Vs Input Voltage 90 U2 Condition Typical Performance Characteristics Standy Power (W) PCB1 Layer 2 Φ0.16*1 Coper 10mm SH1 Good-Ark Good-Ark Build up Terminal POE Diode, Ultra Fast, RS1M,1000V/1.0A, SMB Dgate ♦ SEC Sharp 80.00% 70.00% 230V 50.00% 40.00% 25% Po ST 115V 60.00% 50% Po 75% Po 100% Po Output Power EFFICIENCY EVALUATION KITS ACT511_12V1A_Rev1.1 -18For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 12V/2A UNIVERSAL ADAPTOR Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 <100mW 12V 24W CCM&QR flyback Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Normal size Tiny SOT23-6 package. W*L*H=49mm*69mm*21mm Schematic Picture 8 -19For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials 1 REF IC1 DESCRIPTION IC, ACT512, SOT23-6 MFTR 6 P1 3 S1 P3 Active-Semi 4 C1 Capacitor, Electrolytic, 47µF/400V, 18 × 20mm 7 KSC C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,4.7µF/35V,5*11mm KSC C5 Capacitor, Electrolytic, 820µF/16V, 10*16mm POE C6 Capacitor, Electrolytic,680µF/16V, 8*16mm POE C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE BD1 GBL10 2A/600V 4Pin DIP NC 5 P2 2 ♦ Build up Terminal D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark Good-Ark D6 RS1M SMD Good-Ark D8 Diode, Schottky, 100V/20A, SBR20100, DO-220 Good-Ark Diode L4148 SMD Good-Ark Dgate LF1 CM Inductor, 50mH, UU10.5 SoKa LF2 Axial Inductor, 0.55*5T, 5*7,Dip 200uH SoKa Start Finish Turns P1 1 3 35 2UEW SH1 NC 2 0.9 S1 7 6 9 P2 5 2 P3 3 CORE ♦ Q1 Mosfet Transisor, 04N65, TO-220 PCB1 PCB, L*W*T =49x68x1.6mm, Cem-1, Rev:A Layer 2 0.025*11W copper 10mm 1 0.025*11W 2UEW 0.55Φ*2 1 0.025*11W 2 10 2UEW 0.3Φ*3 1 0.025*11W 2 4 21 2UEW 0.25Φ*2 1 0.025*11W 2 2 3 wire 0.25Φ*1 1 Type Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac Jintong 2 P1 Inductance Inductance between pins 4and 1at 1Vac & 1kHz 0.8mH±%7 3 P1 Leakage Inductance Inductance between pins 5 with pins2and 6-7 shorted 75µH ST Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM R2 metal Resistor,100K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,46.4kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 9.51KΩ, 0805, 1% TY-OHM Chip Resistor, 1MΩ, 5% TY-OHM Layer 2 Electrical specifications SoKa F1 R7,R8 Size*QTY 0.3Φ*2 Description Typical Performance Characteristics Standby Power Vs Input Voltage S tan d y P o wer (W ) DM Inductor, 3µH, R5 Insulation Thick/ Wide Note:1,Core and Bobbin:EF25 2,SH1,SH2 and SH3 are shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 Item L2 Wire Winding 140 120 100 80 60 40 20 0 R9 metal Resistor, 0.87Ω, 1W, 1% TY-OHM R10 Chip Resistor, 510Ω, 1/4W, 5% TY-OHM Input Voltage (VAC) R12 Chip Resistor, 3.3KΩ, 0805, 5% TY-OHM STANDBY POWER R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,33KΩ, 0805,5% TY-OHM R15 Chip Resistor,24.3kΩ, 0805,1% TY-OHM R16 Chip Resistor,6.19KΩ, 0805, 1% TY-OHM Chip Resistor,330Ω, 0805, 5% TY-OHM 90 115 230 264 Efficiency Vs Po 90.00% Rgate T1 EF25 lm=0.8mH E ffic ie n c y 80.00% ST 70.00% 115V 60.00% 230V 50.00% CX1 X capacitance, 0.1µF/400V,X1 NTC Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 IC2 Opto-coupler, PC817C CTR=200 dip-4 IC3 Voltage Regulator, TL431A, Vref=2.5V TO-92 40.00% 25% Po 50% Po 75% Po 100% Po Output Power SEC EFFICIENCY Sharp ST EVALUATION KITS ACT512_12V2A_Rev1.1 -20For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 15V3A UNIVERSAL ADAPTOR Input Voltage Device Standby Power Output Voltage Output Power Topology 90-264VAC ACT512 <150mW 15V 45W CCM&QR flyback Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Normal size Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. W*L*H=44mm*84mm*24mm Tiny SOT23-6 package. Schematic Picture 9 -21For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials REF DESCRIPTION MFTR IC1 IC, ACT512, SOT23-6 Active-Semi C1 Capacitor, Electrolytic, 100µF/400V, 18 × 20mm KSC C3 Capacitor, Ceramic,1000pF/1KV,DIP POE C4 Capacitor, Electrolytic,6.8µF/35V,5*11mm KSC C5 Capacitor, Electrolytic, 820µF/25V, 10*16mm POE C6 Capacitor, Electrolytic,680µF/25V, 8*16mm POE ♦ Build up Terminal Wire Insulation C8 Capacitor, Ceramic, 0.1µF/50V,0805,SMD POE Winding Start Finish Turns Size*QTY Layer Thick/ Wide C9 Capacitor, Ceramic,1000pF/100V,0805,SMD POE P1 11 10 21 2UEW 0.40Φ*1 1 0.025*11W SH1 1 NC 26 2UEW 0.15Φ*2 1 0.025*11W Cfb Capacitor, Ceramic,100pF/50V,0805,SMD POE S1 8 5 8 2UEW 0.50Φ*2 1 0.025*11W 2 P2 3 1 7 2UEW 0.25Φ*2 1 0.025*11W 2 P3 10 2 21 2UEW 0.40Φ*1 1 0.025*11W 2 BD1 GBL10 2A/600V 4Pin DIP Good-Ark D5 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Good-Ark D6 RS1M SMD Good-Ark D8 Diode, Schottky, 100V/20A, SBR20100, DO-220 Good-Ark Diode L4148 SMD Good-Ark Dgate CM Inductor, 50mH, UU10.5 SoKa LF2 Axial Inductor, 0.55*5T, 5*7,Dip 200uH SoKa L2 DM Inductor, 3µH, R5 Q1 Mosfet Transisor, 07N65, TO-220 PCB1 PCB, L*W*T =49x68x1.6mm, Cem-1, Rev:A Layer 2 Note:1,Core and Bobbin:RM8 2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 ♦ Electrical specifications Item LF1 Type Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac SoKa 2 P1 Inductance Inductance between pins 11and 2at 1Vac & 1kHz 0.40mH±%7 ST 3 P1 Leakage Inductance Inductance between pins 11 with pins1and 5-8,3-1 shorted 40µH Jintong F1 Fusible, 2A/250V TY-OHM R1 Chip Resistor,22 Ω, SMD 0805, 5% TY-OHM R2 metal Resistor,100K Ω,DIP,1W,5% TY-OHM R3 Chip Resistor, 100Ω, 0805, 5% TY-OHM R4 Chip Resistor,4.7Ω, 0805, 5% TY-OHM R5 Chip Resistor,54.9kΩ, 0805, 1% TY-OHM R6 Chip Resistor, 11.8KΩ, 0805, 1% TY-OHM Chip Resistor, 1MΩ, 5% TY-OHM R9 metal Resistor, 0.45Ω, 1W, 1% TY-OHM R10 Chip Resistor, 510Ω, 1/4W, 5% TY-OHM R12 Chip Resistor, 3.3KΩ, 0805, 5% TY-OHM R13 Chip Resistor, 10Ω, 0805, 5% TY-OHM R14 Chip Resistor,33KΩ, 0805,5% TY-OHM 90.00% 85.00% Typical Performance Characteristics R15 Chip Resistor,32.4kΩ, 0805,1% TY-OHM R16 Chip Resistor,6.34KΩ, 0805, 1% TY-OHM Chip Resistor,240Ω, 0805, 5% TY-OHM Rgate T1 Rm8 lm=0.4mH CX1 X capacitance, 0.1µF/400V,X1 Thermistor, SC053 TY-OHM TVS Varistor, 10471 TY-OHM CY1 Y capacitance, 1000pF/400V,Y1 IC2 Opto-coupler, PC817C CTR=200 dip-4 IC3 Voltage Regulator, TL431A, Vref=2.5V TO-92 150 100 50 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po ST NTC 200 E fficiency R7,R8 S tand y P ower (m W ) Standby Power Vs Input Voltage 80.00% 115V 75.00% 230V 70.00% 25% Po 50% Po 75% Po 100% Po Output Power SEC EFFICIENCY Sharp ST EVALUATION KITS ACT512_15V3A_Rev1.0 -22For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 7.5W DVB MULTIPLE_OUTPUT UNIVERSAL ADAPTOR Input Voltage Device Standby Power 90-264VAC ACT512 <300mW 3.3，5，12，-24V Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Output Voltage Output Power Topology 7.5W CCM&QR flyback Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Normal size W*L*H=32mm*94mm*19mm Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Schematic Picture 10 -23For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials C8 X capacitance, 0.1µF/400V,X1 Capacitor, Electrolytic, 10µF/400V, 10x16mm Capacitor, Ceramic, 1000pF/1kV, dip Capacitor, Electrolytic,10µF/35V, 5x11mm Capacitor, Ceramic,1000PF/50V, 0805,SMD Capacitor, Electrolytic,200µF/25V, 8x11mm Capacitor, Electrolytic,100µF/25V, 8x11mm Capacitor, Electrolytic,470µF/10V, 8x11mm MFTR POE RUBYCON POE POE POE POE POE C9 Capacitor, Electrolytic,330µF/10V, 8x11mm POE C10 Capacitor, Electrolytic,470µF/6.3V, 8x11mm POE C11 C12 Capacitor, Electrolytic,220µF/6.3V, 8x11mm Capacitor, Electrolytic,100µF/25V, 8x11mm C13 Capacitor, Ceramic,0.1µF/50V, 0805,SMD C14 CY1 D1-D4 D5,D6 Dgate D7 D8,D9 D10 L1 L2 L3 L4 Q1 PCB1 Wire Insulation Finish Turns POE POE P1 4 3 86 SH1 2 NC POE S1 6 S2 8 S3 9 F 21 2UEW 0.22Φ*1 0.025*11W 2 S4 7 10 29 2UEW 0.12Φ*1 1 0.025*11W 2 P3 5 2 37 2UEW 0.15Φ*1 1 0.025*11W 2 P2 3 1 42 2UEW 0.15Φ*1 1 0.025*11W 2 Diode, Schottky, 100V/2A, SB2100, DO-47 Good-Ark Diode, Schottky, 40V/3A, SB340, DO-47 Fast Recovery Rectifier, HER103,200V/1.0A, dip Axial Inductor, 4*7, 1.5mH Axial Inductor, 4*7, f0.55*1/6T Axial Inductor, 4*7, f0.55*1/6T Axial Inductor, 4*7, f0.55*1/6T Good-Ark PANJIT SoKa SoKa SoKa SoKa ♦ Jintong Fuse,1A/250V U1 IC, ACT512,SOT23-6 U2 OPOT PC817C Infineon U3 TL431 TO-92 Infineon R1 Chip Resistor, 1.5Ω, 1206, 1% TY-OHM R2 Carbon Resistor, 100KΩ, 1W, 5%,DIP TY-OHM R3 NC R4 Chip Resistor, 330Ω, 0805, 5% TY-OHM TY-OHM ActiveSemi. Chip Resistor, 1MΩ,0805, 5% TY-OHM R7 Chip Resistor, 10Ω, 1/4W,5%, DIP TY-OHM R8 Chip Resistor, 22Ω, 0805, 5% TY-OHM R9 Chip Resistor, 54.9KΩ,0805 , 1% TY-OHM R10 Chip Resistor, 11.7KΩ,0805, 1% TY-OHM R11 Chip Resistor, 30KΩ, 0805,5% TY-OHM R12 NC R13 Chip Resistor, 10Ω, 1/4W, 5%,DIP TY-OHM R14 Chip Resistor, 2.2KΩ, 1/4W, 5%,DIP TY-OHM R15 Chip Resistor, 5.6KΩ, 1/4W, 5%,DIP TY-OHM R16 Chip Resistor, 220Ω, 0805, 1% TY-OHM R17 Chip Resistor, 2KΩ,0805, 1% TY-OHM R18 Chip Resistor, 3KΩ, 0805, 5% TY-OHM R19 Chip Resistor, 3.09KΩ, 0805, 1% TY-OHM T1 Transformer, Lp=1.55mH, EEL16 Type Size*QTY Layer Thick/Wide 2UEW 0.15Φ*1 2 0.025*11W 2 27 2UEW 0.15Φ*2 1 0.025*11W 2 7 10 2UEW 0.4Φ*1 0.025*11W 2 6 5 2UEW 0.4Φ*1 1 Layer 0.025*11W Note:1,Core and Bobbin:EEL16 2,SH1 is shielding; P1,P2 & P3 are primary and S1-S4 are secondary Infineon F1 R5.R6 Terminal Start KSC UXT Good-Ark Good-Ark Good-Ark Mosfet Transistor, 1N60,TO-251 Build up Winding Capacitor, Electrolytic, 47µF/25V,6.3x11mm Safety Y1,Capacitor,1000pF/400V,Dip Diode, Rectifier ,1000V1A, 1N4007, DO-41 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Diode,Ultra Fast, LN4148,SMD PCB, L*W*T=125x55x1.6mm,Cem-1,Rev:A ♦ POE Electrical specifications Item Description 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 4and 1 at 1Vac & 1kHz 1.55mH±%7 3 P1 Leakage Inductance Inductance between pins 4 and 5 with pins and 7-12 shorted 75µH Condition Limits Typical Performance Characteristics Standby Power Vs Input Voltage Standy Power (mW) Cx1 C1.C2 C3 C4 C5 C6 C7 DESCRIPTION 120 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Vin Efficiency(%) REF 86.00% 84.00% 82.00% 80.00% 78.00% 90 118 146 174 202 230 258 Input Voltage(VAC) EFFICIENCY EVALUATION KITS ACT512_7.5W DVB_Rev1.0 -24For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions ACT512 24W DVB MULTIPLE_OUTPUT UNIVERSAL ADAPTOR Input Voltage Device Standby Power 90-264VAC ACT512 <300mW 3.3，5，12，-24V Key Features • Optimized CCM and advanced Quasi-Resonant operation. • • • • • • • Output Voltage Output Power Topology 24W CCM&QR flyback Demo Board Picture Advanced burst mode operation enables low standby power of 100mW and can lower than 50mW with external circuit. Frequency jetting and Quasi-Resonant technology to decrease EMI. Patented frequency foldback and ActiveQRTM technology increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with good margin. Integrated patented line compensation, provide accurate OCP/OLP protection. Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot. Normal size W*L*H=56mm*127mm*30mm Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Tiny SOT23-6 package. Schematic Picture 11 -25For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Transformer Bill of Materials MFTR C2 C3 C4 C6 C7,C10 C8,C9 Capacitor, Electrolytic, 68µF/400V, 16x24mm Capacitor, Ceramic, 1000pF/1kV, dip Capacitor, Electrolytic,10µF/35V, 5x11mm Capacitor, Ceramic,1000PF/50V, dip Capacitor, Ceramic,1000PF/100V, dip Capacitor, Electrolytic, 470µF/25V, 10x21mm ActiveSemi. RUBYCON POE POE POE KSC KSC C11,C13 Capacitor, Electrolytic, 1000µF/10V, 10x15mm KSC C12,C14 Capacitor, Electrolytic, 470µF/10V, 8x12mm KSC C15 Capacitor, Electrolytic, 220µF/35V, 6x14mm KSC U1 C16 CY1 IC, ACT512,SOT23-6 Capacitor, Ceramic, 0.33µF/35V, dip Safety Y1,Capacitor,1000pF/400V,Dip POE UXT D1-D4 Diode, Rectifier ,1000V1A, 1N4007, DO-41 Good-Ark D5,D6 Dgate D8 D9,D11 D12 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 Diode,Ultra Fast, LN4148,SMD Fast Recovery Rectifier, SB5100,100V/5.0A, dip Diode, Schottky, 45V/10A, S10U45S, TO220 Fast Recovery Rectifier, HER103,200V/1.0A, dip Good-Ark Good-Ark PANJIT Diodes PANJIT LF1 L2 L3 L4 Q3 PCB1 F1 CM Inductor, UU10.5 >30mH Axial Inductor, 6*8, f0.55*1/6T Axial Inductor, 6*8, f0.55*1/6T Axial Inductor, 6*8, f0.55*1/6T Mosfet Transistor, 4N60,TO-220 PCB, L*W*T=125x55x1.6mm,Cem-1,Rev:A Fuse,1A/250V X capacitance, 0.1µF/400V,X1 POE OPOT PC817C Sharp U3 TL431 TO-92 TY-OHM R3 Carbon Resistor, 100KΩ, 1W, 5% TY-OHM R4 Chip Resistor, 100Ω, 0805, 5% TY-OHM R7 Chip Resistor, 22Ω,1/4W, 5% TY-OHM R8 Chip Resistor, 330Ω, 0805,5% TY-OHM R9 Chip Resistor, 47KΩ, 1/4W, 5% TY-OHM R10 Chip Resistor, 9.1KΩ,1/4W , 5% TY-OHM R11 Chip Resistor, 10Ω, 1/4W,5% TY-OHM R12 Chip Resistor, 0.91Ω, 1206, 1% TY-OHM R13,R14 Chip Resistor, 22Ω, 1/4W, 5% TY-OHM R15 Chip Resistor, 1Ω, 1/2W, 5% TY-OHM R16 Chip Resistor, 300Ω, 1/4W, 1% TY-OHM R17 Chip Resistor, 5KΩ, 1/4W, 5% TY-OHM R18 Chip Resistor, 33KΩ, 1/4W, 5% TY-OHM R19 Chip Resistor, 2.2KΩ, 1/2W, 1% TY-OHM R20 Chip Resistor, 5.6KΩ, 1/2W, 1% TY-OHM R22 Chip Resistor, 3.09KΩ, 0805, 1% TY-OHM R23 Chip Resistor, 820Ω, 0805, 5% TY-OHM Chip Resistor, 4KΩ, 0805, 5% TY-OHM R24 T1 Wire Finish Turns P1 3 2 49 5 NC 27 4 TY-OHM TVS Varistor, 10471 TY-OHM Layer Thick/Wide 2UEW 0.30Φ*1 1 0.025*11W 2 2UEW 0.15Φ*2 1 0.025*11W 2 2UEW 0.5Φ*2 1 0.025*11W 2 2UEW 0.5Φ*2 1 0.025*11W 1 0.025*11W 6 7 8 6 2 S3 10 9 8 2UEW 0.5Φ*1 S4 12 11 18 2UEW 0.30Φ*1 P2 4 5 14 2UEW 0.30Φ*2 P3 2 1 49 2UEW 0.30Φ*1 Layer 2 0.025*11W 2 1 0.025*11W 2 1 0.025*11W 2 Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000Vac 2 P1 Inductance Inductance between pins 1 and 3 at 1Vac & 1kHz 0.8mH±7% 3 P1 Leakage Inductance Inductance between pins 1 and 3 with pins 4-5,7-12 and 9-10 shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage 300.00 200.00 100.00 0.00 85 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Input Volatge 80.00% 75.00% 70.00% 0 Thermistor, SC053 Insulation Size*QTY S2 ♦ Transformer, Lp=0.8mH, EEL22 NTC Type S1 Item ST Chip Resistor, 1.0MΩ, 1206, 5% Terminal Start Note:1,Core and Bobbin:EEL22 2,SH1 is shielding; P1,P2 & P3 are primary and S1-S4 are secondary SoKa SoKa SoKa Infineon Jintong TY-OHM U2 Build up Winding SH1 SoKa Cx1 R1,R2,R5,R6 ♦ Standy Power (mW) DESCRIPTION Efficiency REF 115 230 264 Input Voltage(VAC) EFFICIENCY EVALUATION KITS ACT512_24W DVB_Rev1.0 -26For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected].