AT908

POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - Fax + 39 010 8681180
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
PHASE CONTROL THYRISTOR
AT908
Repetitive voltage up to
Mean on-state current
Surge current
800 V
6821 A
95 kA
FINAL SPECIFICATION
Sept. 13 - Issue: 5
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
140
800
V
V
RSM
Non-repetitive peak reverse voltage
140
900
V
V
DRM
Repetitive peak off-state voltage
140
800
V
I
RRM
Repetitive peak reverse current
V=VRRM
140
300
mA
I
DRM
Repetitive peak off-state current
V=VDRM
140
300
mA
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
6821
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
5553
A
I
TSM
CONDUCTING
Surge on-state current
sine wave, 10 ms
I² t
I² t
VR=50%VRRM
V
T
On-state voltage
On-state current =
V
T(TO)
Threshold voltage
140
0,85
V
T
On-state slope resistance
140
0,045
mohm
r
140
95,0
45125 x1E3
9000 A
25
1,26
kA
A²s
V
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM, gate 10V 5ohm
140
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
140
1000
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=5 µs
25
tq
Circuit commutated turn-off time, typical
dv/dt = 20 V/µs linear up to 75% VDRM
Q RR
Reverse recovery charge
di/dt=-20 A/µs, I= 4000 A
.
µs
500
140 .
µs
µC
I
RR
Peak reverse recovery current
VR= 50 V
I
H
Holding current, typical
VD=5V, gate open circuit
25
.
500
mA
A
I
L
Latching current, typical
VD=12V, tp=30µs
25
3000
mA
GATE
V
GT
Gate trigger voltage
VD=12V
25
3,5
V
I
GT
Gate trigger current
VD=12V
25
400
mA
VD=VDRM
140
V
GD
Non-trigger gate voltage, min.
0,4
V
V
FGM
Peak gate voltage (forward)
10
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
P
GM
Peak gate power dissipation
P
G
Average gate power dissipation
R
th(j-c)
Thermal impedance, DC
Junction to case, double side cooled
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T
F
j
Operating junction temperature
Mounting force
Mass
Pulse width 100 µs
10
V
150
W
3
W
MOUNTING
°C/kW
1,0
°C/kW
-30 / 140
80/ 100
3000
ORDERING INFORMATION : AT908 S 08
standard specification
6,0
VDRM&VRRM/100
Page 1 of 4
°C
kN
g
POSEICO
AT908 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
Sept. 13 - Issue: 5
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
160
140
120
100
80
60
30°
60°
90°
120°
180°
DC
40
0
2000
4000
6000
8000
10000
IF(AV) [A]
PF(AV) [W]
14000
DC
12000
120°
60°
10000
180°
90°
30°
8000
6000
4000
2000
0
0
2000
4000
6000
IF(AV) [A]
Page 2 of 4
8000
10000
POSEICO
AT908 PHASE CONTROL THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION
Sept. 13 - Issue: 5
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
160
140
120
100
80
60
60°
30°
90°
120°
180°
40
0
2000
4000
6000
8000
IF(AV) [A]
PF(AV) [W]
12000
120°
180°
90°
10000
60°
8000
30°
6000
4000
2000
0
0
2000
4000
IF(AV) [A]
Page 3 of 4
6000
8000
POSEICO
AT908 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
Sept. 13 - Issue: 5
SURGE CHARACTERISTIC
Tj = 140 °C
ON-STATE CHARACTERISTIC
Tj = 140 °C
25000
100
90
80
70
15000
ITSM [kA]
On-state Current [A]
20000
10000
60
50
40
30
5000
20
10
0
0
0,6
1,1
1,6
2,1
On-state Voltage [V]
1
10
100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
7
Wave
6
Square
Sine
°180
0,39
0,75
∆Rth [°K/kW]
°120
°90
°60
0,71
1,01
1,52
1,06
1,59
2,61
°30
2,54
4,04
Zth j-c [°C/kW]
5
4
3
2
1
0
0,0001
0,01
1
100
t[s]

ℎ −  =
 ∗ 1 − 
−


=1
i
Ai [°C/kW]
1
2,738
2
1,779
3
1,186
4
0,297
τi [s]
2,4
1,70
0,16
0,001
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Page 4 of 4