High gain amplifier transistor (25V, 2A) 2SD2153 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5 (1) 0.5 3.0 1.5 0.4 1.0 (1) Base (2) Collector (3) Emitter 0.4 ROHM : MPT3 EIAJ : SC-62 1.5 1.5 0.4 (3) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Symbol VCBO Limits Unit 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V 2 A(DC) 3 A(Pulse) IC Collector current Collector power dissipation Junction temperature Storage temperature 0.5 PC 2 Tj Tstg ∗1 W ∗2 150 °C −55 to +150 °C + + ∗1 Single pulse, Pw=10ms ∗2 Mounted on a 40 40 t0.7mm Ceramic substrate Packaging specifications and hFE Type 2SD2153 Package hFE Marking MPT3 UVW Code Basic ordering unit (pieces) T100 1000 DN ∗ ∗ Denotes hFE Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 25 6 − − − 820 − − Typ. − − − − − 0.12 − 110 22 Max. − − − 0.5 0.5 0.5 1800 − − Unit V V V μA μA V − MHz pF Conditions IC = 50μA IC = 1mA IE = 50μA VCB = 20V VEB = 5V IC/IB = 1A/20mA VCE/IC = 6V/0.5A VCE = 10V , IE = −10mA , f= 100MHz VCB = 10V , IE = 0A , f = 1MHz ∗ ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.12 - Rev.B 2SD2153 Data Sheet Electrical characteristics curves 10 3mA 2mA 1 1B=1mA 0 0 2 1 500m 50m 20m 10m 5m 2 1 Ta=100 C 25 C −25 C 200m 100m 2m 1m 0 1 500m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 200m 100m 50m IC/IB=50 40 30 10 5m 500m 100m 10m 5m 5 Ta=25°C f=1MHz Ic=0A 1000 500 200 100 50 20 50 100 ∗ This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data. 5m 10m 20m 50m 100m 200m 500m 1 2 1 1000 500 200 100 50 20 10 VCE=6V Ta=25 C 500 200 100 50 20 10 5 2 1 5 Ta=25°C f=1MHz Ic=0A 10 0.1 0.2 100m Fig.3 DC current gain ∗ This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data. 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IE (mA) Fig.5 Collector-emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Fig.4 Collector-emitter saturation voltage vs. collector current 10 20 10m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 5 100 10000 20m 1m 1m 2m 2 200 1m Ta=100 C 25 C −25 C 50m 1m 1m 2m 0.5 1 500 1.5 200m 2m 10 0.1 0.2 1 IC/IB=10 2m 2 −40 C 1k Fig.2 Ground emitter propagation characteristics 500m 5m 10m 20m 50m 100m 200m 500m 1 25 C 2k BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics 10m Ta=100 C 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 20m VCE=6V 5k TRANSITION FREQUENCY : fT(MHz) 4mA 10k ∗ This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data. 5 DC CURRENT GAIN : hFE 7mA 6mA 5mA Fig.6 Gain bandwith product vs. emitter current 10 Ic max (Pulse) COLLECTOR CURRENT : Ic (A) 10mA 9mA 8mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 PW=10ms PW=100ms 1 DC 0.1 0.01 Ta=25°C Single non repetitive pulse 0.5 1 2 5 10 0.001 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Emitter input capacitance vs. emitter-base voltage Fig.9 Safe operating area www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/2 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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