SSF6N80A6
800V N-Channel MOSFET
Main Product Characteristics
VDSS
800V
RDS(on)
2.2Ω (typ.)
ID
5.5A
TO-262
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
5.5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
3.2
IDM
Pulsed Drain Current②
22
Power Dissipation③
145
W
Linear Derating Factor
1.16
W/°C
VDS
Drain-Source Voltage
800
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=33.5mH
339
mJ
IAS
Avalanche Current @ L=33.5mH
4.5
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF6N80A6
800V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.86
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62.5
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
800
—
—
V
—
2.2
2.7
—
5.2
—
2
—
4
—
1.9
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
14
—
Qgs
Gate-to-Source charge
—
4.9
—
Qgd
Gate-to-Drain("Miller") charge
—
4.6
—
VGS = 10V
td(on)
Turn-on delay time
—
14
—
VGS=10V, VDS=415V,
tr
Rise time
—
27
—
td(off)
Turn-Off delay time
—
37
—
tf
Fall time
—
25
—
ID=5.5A
Ciss
Input capacitance
—
700
—
VGS = 0V
Coss
Output capacitance
—
76
—
Crss
Reverse transfer capacitance
—
3.9
—
Ω
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 2.5A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 800V,VGS = 0V
TJ = 125℃
nA
VGS =30V
VGS = -30V
ID = 5.5A,
nC
ns
pF
VDS=100V,
RL=75Ω,
RGEN=25Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
5.5
A
—
—
22
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.87
1.4
V
IS=5A, VGS=0V
trr
Reverse Recovery Time
—
1029
—
ns
TJ = 25°C, IF =5.5A,
Qrr
Reverse Recovery Charge
—
3835
—
nC
di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.1.0
SSF6N80A6
800V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.1.0
SSF6N80A6
800V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
www.goodark.com
Temperature
Page 4 of 7
Rev.1.0
SSF6N80A6
800V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
www.goodark.com
Page 5 of 7
Rev.1.0
SSF6N80A6
800V N-Channel MOSFET
Mechanical Data
TO-262 PACKAGE OUTLINE DIMENSION / Unit: mm
www.goodark.com
Page 6 of 7
Rev.1.0
SSF6N80A6
800V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF6N80A6
Package (Available)
TO-262
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-262
50
20
1000
4000
4
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 7 of 7
Rev.1.0