SSFD4004
40V N-Channel MOSFET
Main Product Characteristics
VDSS
40V
RDS(on)
3.2mohm(typ.)
ID
145A
TO-252
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
145①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
100①
IDM
Pulsed Drain Current ②
580
Power Dissipation ③
153
W
Linear Derating Factor
1.02
W/°C
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH
281.3
mJ
IAS
Avalanche Current @ L=0.1mH
75
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.1.0
SSFD4004
40V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.98
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
40
—
—
V
—
3.2
4
—
6.17
—
1
—
3
—
1.11
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
52.3
—
Qgs
Gate-to-Source charge
—
20.3
—
Qgd
Gate-to-Drain("Miller") charge
—
23.1
—
VGS = 4.5V
td(on)
Turn-on delay time
—
15.9
—
VGS=10V, VDS =15V,
tr
Rise time
—
49.0
—
td(off)
Turn-Off delay time
—
61.6
—
tf
Fall time
—
25.6
—
ID =20A
Ciss
Input capacitance
—
6653
—
VGS = 0V
Coss
Output capacitance
—
632
—
Crss
Reverse transfer capacitance
—
603
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 40V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 20A,
nC
nS
pF
VDS=15V,
RL=0.75Ω,
RGEN=3Ω
VDS = 15V
ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
145①
A
—
—
580
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.72
1.2
V
IS=2.1A, VGS=0V
trr
Reverse Recovery Time
—
30.8
—
nS
TJ = 25°C, IF =20A, di/dt =
Qrr
Reverse Recovery Charge
—
31.1
—
nC
100A/μs
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Page 2 of 7
Rev.1.0
SSFD4004
40V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C.
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSFD4004
40V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Temperature
Page 4 of 7
Rev.1.0
SSFD4004
40V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSFD4004
40V N-Channel MOSFET
Mechanical Data
DPAK PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
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Dimension In Millimeters
Nom
Max
2.300
2.380
1.010
1.110
0.760
0.810
5.330
5.460
0.510
0.560
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
2.200
0.910
0.710
5.130
0.460
6.000
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
0
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
0
8 (REF)
8 (REF)
Page 6 of 7
Rev.1.0
SSFD4004
40V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSFD4004
Package (Available)
DPAK（TO-252）
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Option1：
Package
Type
Units/Tape Tapes/Inner
Box
TO-252
Option2：
Package
Type
2500
2
Units/Tape Tapes/Inner
Box
TO-252
2500
1
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner
Box
5000
Units/Inner
Box
2500
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
35000
25000
Rev.1.0