Datasheet

AO3404A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3404A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = 30V
ID = 5.8A
RDS(ON) < 25mΩ
RDS(ON) < 35mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A,F
VGS
TA=25°C
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
Rev.5.0: June 2015
±20
V
ID
4.9
IDM
64
W
0.9
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
1.4
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
5.8
Pulsed Drain Current B
Power Dissipation
Maximum
30
RθJA
RθJL
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Typ
65
85
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
64
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=5.8A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
Gate resistance
2.1
100
nA
2.6
V
A
18.4
25
26.2
36
24.5
35
mΩ
mΩ
22
0.75
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
µA
5
VGS=4.5V, ID=4.8A
Output Capacitance
V
TJ=55°C
VGS=10V, ID=5.8A
Reverse Transfer Capacitance
Units
1
Zero Gate Voltage Drain Current
Crss
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
373
VGS=0V, VDS=15V, f=1MHz
S
1
V
2.5
A
448
pF
67
pF
41
pF
1.8
2.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7.1
11
nC
Qg(4.5V) Total Gate Charge
3.3
nC
1.4
nC
1.7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=5.8A
0.9
4.5
6.5
ns
VGS=10V, VDS=15V, RL=2.6Ω,
RGEN=3Ω
2.4
ns
14.8
ns
IF=5.8A, di/dt=100A/µs
10.5
Body Diode Reverse Recovery Charge IF=5.8A, di/dt=100A/µs
4.5
Body Diode Reverse Recovery Time
2.5
ns
12.6
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.5.0: June 2015
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Page 2 of 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
10V
VDS=5V
6V
50
VDS=5V
12
9
4.5V
ID (A)
ID (A)
40
30
20
125°C
6
125°C
VGS=3.5V
10
0
25°C
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Figure 1: On-Region Characteristics
2.5
3
373
67
41
VGS=10V
1.2
Id=5.8A
Normalized On-Resistance
1.8
38
3.5
4
4.5
VGS (Volts)
Figure 2: Transfer Characteristics
45
RDS(ON) (mΩ)
25°C
3
VGS=4.5V
31
24
17
VGS=10V
10
1.6
448
1.8
1.4
1.2
VGS=4.5V
Id=4.8A
1
0.8
0.6
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
100
125 12.6
150
10.5
4.5
Temperature (°C)
75
175
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=5.8A
1.0E+00
1.0E-01
40
125°C
IS (A)
RDS(ON) (mΩ)
50
30
125°C
1.0E-02
25°C
1.0E-03
20
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
25°C
10
2
4
6
8
1.0E-04
10
1.0E-05
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.5.0: June 2015
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
VDS=15V
ID=5.8A
500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
400
300
Coss
200
2
100
0
0
2
4
6
Crss
0
8
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
30
10µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
0.0
0.01
0.1
20
10
0.1s
DC
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
10.0
10s
1
10
0
0.001
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.5.0: June 2015
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Page 4 of 4