AO4449 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current F Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -40 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -4.6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -7 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 31 60 16 Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4449 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V -5 VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 On state drain current VGS=-10V, VDS=-5V -40 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VGS=-10V, ID=-7A Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -2 ±100 nA -3 V 34 38 VGS=-4.5V, ID=-5A 43 VDS=-5V, ID=-7A 15 -0.77 980 VGS=0V, VDS=-15V, f=1MHz 54 VGS=-10V, VDS=-15V, ID=-7A VGS=-10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω mΩ mΩ S -1 V -3.5 A 1225 pF 150 pF 115 VGS=0V, VDS=0V, f=1MHz µA A 27 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Units -1 TJ=55°C ID(ON) Coss Max V VDS=-30V, VGS=0V IDSS IS Typ pF 2.2 3.3 Ω 18.7 24 nC 9.6 nC 3.2 nC 4.8 nC 7.7 ns 6 ns 20 ns 7 trr Body Diode Reverse Recovery Time IF=-7A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/µs 13 ns 26 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Dec 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4449 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 -10V 35 -4.5V -6V VDS=-5V 25 30 20 -4V -ID(A) -ID (A) 25 20 15 -3.5V 15 10 10 125°C 5 VGS=-3V 5 25°C 0 0 0 1 2 3 4 5 0 1 60 Normalized On-Resistance RDS(ON) (mΩ) 3 4 5 2.00 50 VGS=-4.5V 40 30 VGS=-10V 20 1.80 VGS=-4.5V ID=-5A 1.60 1.40 VGS=-10V ID=-7A 1.20 1.00 0.80 10 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 1.0E+01 70 1.0E+00 ID=-7A 1.0E-01 60 125°C 50 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 40 125°C 1.0E-02 1.0E-03 1.0E-04 30 25°C 20 25°C 1.0E-05 1.0E-06 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4449 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 Ciss Capacitance (pF) -VGS (Volts) 1250 VDS=-15V ID=-7A 8 6 4 2 1000 750 500 0 0 4 8 12 16 Crss 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 0.1ms 10.0 1.0 Power (W) 1ms RDS(ON) limited 0.1s DC 10s TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Coss 250 100 100 90 80 70 60 50 40 30 20 10 0 0.0001 TJ(Max)=150°C TA=25°C 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000 www.aosmd.com