Reliability Report

AOS Semiconductor
Product Reliability Report
AOB12N65L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOB12N65L.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOB12N65L passes
AOS quality and reliability requirements. The released product will be categorized by the process
family and be routine monitored for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product Description:
The AOB12N65L have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts
can be adopted quickly into new and existing offline power supply designs.
Details refer to the datasheet.
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond
Mold Material
Moisture Level
AOB12N65L
Standard sub-micron
650V N-Channel MOSFET
TO263
Bare Cu
Solder Paste
Al wire
Epoxy resin with silica filler
Level 1
2
III. Reliability Stress Test Summary and Results
Test Item
Test Condition
Time Point
Total
Sample
Size
Number
of
Failures
Reference
Standard
HTGB
Temp = 150°C ,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
HTRB
Temp = 150°C ,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
MSL
Precondition
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
-
3234 pcs
0
JESD22-A113
96 hours
924 pcs
0
JESD22-A110
1000 hours
462 pcs
0
JESD22-A101
130°C , 85%RH,
33.3 psia,
Vds = 80% of Vdsmax
up to 42V
85°C , 85%RH,
Vds = 80% of Vdsmax
up to 100V
HAST
H3TRB
Autoclave
121°C , 29.7psia,
RH=100%
96 hours
924 pcs
0
JESD22-A102
Temperature
Cycle
-65°C to 150°C ,
air to air
250 / 500
cycles
924 pcs
0
JESD22-A104
HTSL
Temp = 150°C
1000 hrs
462 pcs
0
JESD22-A103
Power
Tj = 100°C
8572 cycles
462 pcs
0
AEC Q101
3.5min on/3.5min off
Cycling
Note: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 2.86
MTTF = 39912 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 2.86
9
MTTF = 10 / FIT = 39912 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
259
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
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