Datasheet

AO4335
30V P-Channel MOSFET
General Description
Product Summary
The AO4335 uses advanced trench technology to provide excellent
RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device
is suitable for use as a load switch or in PWM applications.
VDS = -30V
ID = -10.5A
(VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
-RoHS Compliant
-AO4335 is Halogen Free
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
Bottom View
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Power Dissipation
Avalanche Current
A
B
TA=25°C
B
B
Maximum Junction-to-Lead
Rev.1.0: October 2014
C
IDM
-80
A
A
3.1
W
2.0
IAR
-20
A
EAR
60
mJ
-55 to 150
°C
Symbol
A
V
-8
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
±25
ID
PD
TA=70°C
Repetitive avalanche energy 0.3mH
Units
V
-10.5
TA=70°C
Pulsed Drain Current
-30
Maximum
t ≤ 10s
Steady State
Steady State
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RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID = -250µA, VGS = 0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±25V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-80
TJ = 55°C
-5
VGS = -20V, ID = -11A
Static Drain-Source On-Resistance
TJ=125°C
36
Maximum Body-Diode Continuous Current
22
-0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
A
27
IS
Rg
14
VGS = -5V, ID = -5A
VDS = -5V, ID = -10A
Output Capacitance
11
18
IS = -1A,VGS = 0V
Reverse Transfer Capacitance
V
15
Diode Forward Voltage
Crss
nA
-3
19
Forward Transconductance
VGS=0V, VDS=-15V, f=1MHz
µA
±100
15
gFS
Units
-2.3
VGS = -10V, ID = -10A
VSD
Coss
Max
V
VDS = -30V, VGS = 0V
IDSS
RDS(ON)
Typ
mΩ
S
-1
V
-3.5
A
1130
pF
240
pF
155
pF
1.4
2.8
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
18
28
nC
Qg(4.5V)
Total Gate Charge
9.5
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-10A
0.7
5.5
nC
Qgd
Gate Drain Charge
3.3
nC
tD(on)
Turn-On DelayTime
8.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
8.5
ns
18
ns
7
ns
IF=-10A, dI/dt=100A/µs
25
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
12
ns
nC
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2014
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS= -5V
-10V
-8V
60
-6V
-ID(A)
-ID (A)
60
40
40
125°C
-4.5V
20
20
VGS= -4V
25°C
0
0
0
1
2
3
4
5
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics
40
1.6
Normalized On
On-Resistance
VGS=-5V
35
30
RDS(ON) (mΩ)
2
25
20
VGS=-10V
15
10
VGS=-10V
ID=-10A
1.4
VGS=-20V
ID=-11A
1.2
1.0
VGS=-5V
ID=-5A
0.8
VGS=-20V
5
0.6
0
5
10
15
20
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
55
1E+01
ID=-11A
1E+00
45
125°C
35
-IS (A)
RDS(ON) (mΩ)
1E-01
25
125°C
1E-02
25°C
1E-03
1E-04
15
25°C
1E-05
5
2
4
6
8
10
12
14
16
18
20
1E-06
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.1.0: October 2014
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0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
1.0
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
VDS=-15V
ID=-10A
Ciss
1500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
Coss
500
Crss
0
0
5
10
15
0
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
30
1000
TJ(Max)=150°C
TA=25°C
RDS(ON) limited
100
10µs
10
100µs
1
1ms
10ms
100ms
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
-ID (Amps)
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
10s
DC
0.01
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
ZθJA Normalized Transient
Thermal Resistance
20
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
Rev.1.0: October 2014
0.001
T
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
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100
1000
Page 4 of 5
G a te C h arg e Te st C ircu it & W avefo rm
Vgs
Qg
-1 0V
-
-
VDC
+
VDC
Q gd
Qgs
V ds
+
DUT
V gs
Ig
C h arg e
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
td(on)
t d(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: October 2014
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5