20131107013758 4648

WCD4C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage : 600V
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R.M.S On-State Current ( IT(RMS)= 4 A )
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Low On-State Voltage (1.6V(Typ.) @ ITM)
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Isolation Voltage(VISO=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
J
Symbol
VDRM
Parameter
Condition
Repetitive Peak Off-State Voltage
Ratings
Units
600
V
Average On-State Current(180°
Ti =60 °C
1.35
Conduction Angle)
Tamb=25 °C
0.9
R.M.S On-State Current(180° Conduction
Ti =60 °C
Angle)
Tamb=25 °C
IT(AV)
A
4
IT(RMS)
A
1.35
1/2 Cycle, 60Hz, Sine
ITSM
Surge On-State Current
33
A
WaveNon-Repetitive
I2t
I2t for Fusing
t =10ms
4.5
A2s
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
0.5
W
0.2
W
1.2
A
1500
V
Operating Junction Temperature
-40~125 °C
°C
Storage Temperature
-40~150 °C
°C
PG(AV)
Forward Average Gate Power Dissipation
IFGM
Forward Peak Gate Current
VISO
Isolation Breakdown voltage(R.M..S)
TJ
TSTG
Tj=125 °C
A,C.1minute
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJC
Thermal Resistance Junction to Case(DC)
15
℃/W
RθJA
Thermal Resistance Junction to Ambient(DC)
100
℃/W
Rev.A Oct.2010
[email protected] Microelectronics Co., Ltd., All right reserved.
WCD4C60
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
IDRM
Repetitive Peak Off-State Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
VD=12V,RL=140
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
dv/dt
Units
Min
Typ
Max
-
-
10
μA
-
-
1
mA
-
1.6
1.8
V
-
-
15
mA
-
-
1.5
V
VAK=VDRM RGK=1KΩ
ITM=8A, tp=380㎲
VGT
Value
VD=12V,RL=3.3KΩ, RGK=1 KΩ
0.1
V
VD=67%VDRM, RGK=1 KΩ
200
-
-
V/㎲
Voltage
IH
Holding Current
IT=50mA, RGK=1 KΩ
-
-
20
mA
IL
Latching Current
IT=1mA, RGK=1 KΩ
6
-
-
mA
Rd
Dynamic resistance
Tj=125°C
-
-
100
mΩ
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement
2/5
Steady, keep you advance
WCD4C60
Fig . 1 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout)
Fig. 2Maximum average power dissipation
versus average on-state current
Fig. 3 Relative variation of gate trigger current
And holding current versus junction temperature
Fig. 4Surge peak on-state current versus
Number of cycles.
Fig.5
Fig.5Relative variation of dV/dt immunity
Versus gate-cathode resistance(typical values)
Fig.6 Relative Variation of dV/dt immunity
Versus gate-cathode resistance(typical values)
3/5
Steady, keep you advance
WCD4C60
Fig.7 On-state Characteristics (maximum values)
Fig.8 Thermal Resistance junction to ambient
Versus copper surface under tab (Epoxy printed
Circuit board FR4,copper thickness:35mm)
4/5
Steady, keep you advance
WCD4C60
TO
-252 Package Dimension
TO-252
Unit: mm
5/5
Steady, keep you advance