CET CED16N10

CED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed
S
a
Maximum Power Dissipation @ TC = 25 C
Operating and Store Temperature Range
±20
Units
V
V
ID
13.3
IDM
53
A
43
W
PD
- Derate above 25 C
100
A
0.34
W/ C
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
3.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
Rev 1. 2010.Jan.
http://www.cetsemi.com
Details are subject to change without notice .
1
CED16N10/CEU16N10
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
100
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 100, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
VGS(th)
VGS = VDS, ID = 250µA
4
V
RDS(on)
VGS = 10V, ID = 6.5A
100
120
mΩ
gFS
VDS = 10V, ID = 6.5A
5
S
530
pF
100
pF
22
pF
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
2
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 50V, ID = 13.3A,
VGS = 10V, RGEN = 25Ω
15
40
ns
2.9
7
ns
32
70
ns
Turn-Off Fall Time
tf
7
15
ns
Total Gate Charge
Qg
12
16
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 80V, ID = 13.3A,
VGS = 10V
3
nC
4.1
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 13.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d. L=0.7mH, IAS=13.3A, VDD=25V, RG=25Ω, Starting TJ=25 C
2
13.3
A
1.5
V
CED16N10/CEU16N10
25
VGS=7V
VGS=10,9,8V
20
ID, Drain Current (A)
ID, Drain Current (A)
24
16
VGS=6V
12
8
4
0
0
2
4
6
8
0
10
1
2
3
-55 C
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
500
400
300
200
Coss
100
Crss
0
5
10
15
20
25
2.2
1.9
ID=6.5A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
25 C
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
5
VDS, Drain-to-Source Voltage (V)
600
1.2
10
TJ=125 C
700
1.3
15
VGS=5V
800
0
20
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=80V
ID=13.3A
6
4
2
0
0
2
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED16N10/CEU16N10
2
4
6
8
10
100ms
10
1ms
10ms
DC
10
10
12
1
0
TC=25 C
TJ=175 C
Single Pulse
-1
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
0.1
-1
PDM
0.05
0.02
0.01
t1
Single Pulse
10
-2
10
-2
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
3
10
4
2