Datasheet

AOD3N80
800V,2.8A N-Channel MOSFET
General Description
Product Summary
The AOD3N80 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular ACDC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply
designs.
VDS
[email protected]
ID (at VGS=10V)
2.8A
RDS(ON) (at VGS=10V)
< 4.8Ω
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
D
Bottom View
D
D
G
G
S
S
S
G
AOD3N80
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
TC=100°C
C
Maximum
800
Units
V
±30
V
2.8
ID
1.8
A
IDM
9
Avalanche Current C
IAR
2.2
A
Repetitive avalanche energy C
EAR
72
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
dv/dt
145
5
83
mJ
V/ns
W
0.7
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev.1.0 May 2013
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
Typical
45
Maximum
55
Units
°C/W
1.2
0.5
1.5
°C/W
°C/W
RθJC
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Page 1 of 6
AOD3N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
800
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
900
V
ID=250µA, VGS=0V
0.78
V/ oC
VDS=800V, VGS=0V
1
VDS=640V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
3.3
4.2
4.5
nΑ
V
4.8
Ω
1
V
2.8
A
9
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
3.8
gFS
Forward Transconductance
VDS=40V, ID=1.5A
2.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.77
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
S
510
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=640V, ID=3A
µA
pF
39
pF
3.7
pF
2.9
Ω
10
nC
Qgs
Gate Source Charge
2.6
nC
Qgd
Gate Drain Charge
2.9
nC
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=400V, ID=3A,
RG=25Ω
34
ns
19
ns
IF=3A,dI/dt=100A/µs,VDS=100V
344
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
2.2
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.2A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 May 2013
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AOD3N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10
-55°C
VDS=40V
10V
4
6.5V
3
ID(A)
ID (A)
6V
2
125°C
1
5.5V
1
25°C
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
10
Normalized On-Resistance
3
8
RDS(ON) (Ω
Ω)
VGS=10V
6
4
2
2.5
VGS=10V
ID=1.5A
2
1.5
1
0.5
0
0
0
1.5
3
4.5
6
-100
7.5
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
ID=30A
1E+01
1.1
1E+00
40
125°C
1
IS (A)
BVDSS (Normalized)
10
125°
1E-01
25°C
1E-02
1E-03
0.9
25°
1E-04
0.8
1E-05
-100
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0 May 2013
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0
0.2
0.4
0.6
0.8
1
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD3N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=640V
ID=3A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Ciss
100
Coss
10
Crss
3
0
1
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0.1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000
100
TJ(Max)=150°C
TC=25°C
800
RDS(ON)
limited
Power (W)
10
ID (Amps)
1
10µs
100µs
1
1ms
DC
0.1
10ms
600
400
200
TJ(Max)=150°C
TC=25°C
0.01
0
1
10
100
1000
10000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0 May 2013
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Page 4 of 6
AOD3N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
2.5
80
Current rating ID(A)
Power Dissipation (W)
100
60
40
20
2
1.5
1
0.5
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
TA=25°C
Power (W)
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0 May 2013
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Page 5 of 6
AOD3N80
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 May 2013
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6