20131114072631 6946

0B
WFP2N6
FP2N60
on N-C
hannel MOS
FET
Silic
Silico
N-Ch
MOSF
Features
■ 2A,600V, RDS(on)(Max 5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
G
D
suited for high efficiency switch mode power supply.
TO220
S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
2.0
A
Continuous Drain Current(@Tc=100℃)
1.3
A
8
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
140
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
6.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
54
W
0.43
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Parameter
Symbol
RQJC
Thermal Resistance, Junction-to-Case
RQCS
Thermal Resistance, Case-to-Sink
RQJA
Thermal Resistance, Junction-to-Ambient
Min
Value
Typ
Max
-
-
2.3
℃/W
0.5
-
-
℃/W
-
-
62.5
℃/W
Units
Rev. D Nov.2009
T02-2
[email protected] Microelectronics Co., Ltd., All right reserved.
0B
WFP2N6
FP2N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
VDS = 600 V, VGS = 0 V
-
-
10
μA
Drain cut−off current
IDSS
VDS = 480 V, Tc = 125°°C
-
-
100
μA
600
-
-
V
ID=250μA, Referenced to 25℃
-
0.5
-
V/℃
Drain−source breakdown voltage
V(BR)DSS
Break Voltage Temperature
Coefficient
ΔBVDSS/
ΔT J
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID =1A
-
4.5
5
Ω
Forward Transconductance
gfs
VDS = 50 V, ID =1A
-
2.25
-
S
Input capacitance
Ciss
VDS = 25 V,
-
190
230
Reverse transfer capacitance
Crss
VGS = 0 V,
-
1.8
2.1
Output capacitance
Coss
f = 1 MHz
-
ID = 250 μA, VGS = 0 V
15
20
Rise time
tr
VDD =300 V,
-
23
45
Turn−on time
ton
ID = 2 A
-
7
23
Fall time
tf
RG=25 Ω
-
24
46
Turn−off time
toff
-
22
43
-
9.0
12
-
1.7
-
-
4.5
-
Switching time
(Note4,5)
Total gate charge (gate−source
VDD = 320 V,
Qg
plus gate−drain)
pF
ns
VGS = 10 V,
nC
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 2 A
(Note4,5)
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
2
A
Pulse drain reverse current
IDRP
-
-
-
8
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR = 2 A, VGS = 0 V,
-
180
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
0.72
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤2.0A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
0B
WFP2N6
FP2N60
Fig. 1 On-State Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.2 Transfer Current Characteristics
Fig.4 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Fig.6 Gate Charge Characteristics
3/7
Steady, keep you advance
0B
WFP2N6
FP2N60
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
Steady, keep you advance
0B
WFP2N6
FP2N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
0B
WFP2N6
FP2N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Steady, keep you advance
0B
WFP2N6
FP2N60
220 Pa
ckage Dimension
TOO-220
Pac
t: mm
Uni
Unit:
7/7
Steady, keep you advance