Down

WFP630
on N-Chann
el MOS
FET
Silic
ilico
nne
OSF
Features
■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 22nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
rip
General Desc
scrip
ripttion
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
G
D
suited for low voltage applications such as automotive, high
TO220
S
efficiency switching for DC/DC converters, and DC motor control.
ngs
Absolute Max
axiimum Rati
tin
Symbol
VDSS
ID
Parameter
Value
Units
200
V
Continuous Drain Current(@Tc=25℃)
9
A
Continuous Drain Current(@Tc=100℃)
5.7
A
36
A
Drain Source Voltage
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
7.2
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
72
W
0.57
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
al Ch
arac
stics
Therm
rmal
Cha
actteri
ris
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
1.74
℃/W
RQCS
Thermal Resistance, Case to Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Jun.2010
[email protected] Microelectronics Co., Ltd., All right reserved.
WFP630
arac
Elec
ecttrical Ch
Cha
actteristics (Tc = 25
25°°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
IDSS
VDS = 200 V, VGS = 0 V
-
-
10
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
200
-
-
V
Break Voltage Temperature
Coefficient
ΔBVDSS/
ID=250μA, Referenced to 25℃
-
0.2
-
V/℃
Gate−source breakdown voltage
Drain cut−off current
ΔTJ
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 4.5A
-
-
0.4
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 4.5A
-
7.05
-
S
Input capacitance
Ciss
VDS = 25 V,
-
500
720
Reverse transfer capacitance
Crss
VGS = 0 V,
-
22
29
Output capacitance
Coss
f = 1 MHz
-
85
110
Rise time
tr
VDD =100 V,
-
11
30
Turn−on time
ton
-
70
150
Fall time
tf
-
60
130
Turn−off time
toff
-
65
140
-
22
29
-
3.6
-
-
10
-
Switching time
Total gate charge (gate−source
plus gate−drain)
Qg
ID = 9 A
RG=12 Ω
(Note4,5)
VDD = 160 V,
pF
ns
VGS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 9 A
(Note4,5)
nC
s and Ch
arac
Sou
Sourrce−Drain Rating
ings
Cha
actteristics (Ta = 25
25°°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
36
A
Forward voltage (diode)
VDSF
IDR = 9 A, VGS = 0 V
-
1.4
1.5
V
Reverse recovery time
trr
IDR = 9A, VGS = 0 V,
-
140
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
1.1
2.2
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WFP630
Fig. 1 On-State Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.2 Transfer Characteristics
Fig.4 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Fig.6 Gate Charge Characteristics
3/7
Steady, keep you advance
WFP630
Fig.8 Capacitance Characteristics
Fig.9 Breakdown Voltage Variation
vs. Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current vs
Case Temperature
Fig.11 Transient Thermal Response Curve
4/7
Steady, keep you advance
WFP630
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
WFP630
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Steady, keep you advance
WFP630
20 Pa
cka
ge Dim
ension
TO-2
-22
Pac
kage
Dime
Unit: mm
7/7
Steady, keep you advance