NTE2652 (PNP) & NTE2653 (NPN) Silicon Complementary Transistors High Current Driver Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Electrical Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current VCBO VCB = 40V, IE = 0 − − 1.0 µA Emitter Cutoff Current VEBO VEB = 4V, IC = 0 − − 1.0 µA 140 − 560 VCE = 2V, IC = 3A − 40 − fT VCE = 10V, IC = 50mA − 150 − MHz cob VCB = 10V, f = 1MHz − 25 − pF VCE(sat) IC = 2A, IB = 100mA − 0.19 0.5 V − 0.35 0.7 V − 0.94 1.2 V DC Current Gain Gain−Bandwidth Product Output Capacitance Collector to Emitter Saturation Voltage NTE2652 hFE VCE = 2V, IC = 100mA NTE2653 Base to Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 100mA Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 − − V Collector to Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 50 − − V Emitter to Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 − − V .343 (8.73) Max .492 (12.5) Min .024 (0.62) Max E C B .102 (2.6) Max .059 (1.5) Typ .018 (0.48) .118 (3.0) Max .236 (6.0)Dia Max .197 (5.0) .102 (2.6) Max