ROHM RB162L-40

Data Sheet
Schottky Barrier Diode
RB162L-40
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
2.0
4.2
0.1±0.02
0.1
②
5.0±0.3
2
①
1.2±0.3
4
4.5±0.2
Features
1)Small power mold type. (PMDS)
2)High reliability.
2.0
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
Structure
Silicon epitaxial planer
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
①
②
Taping dimensions (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on glass epoxy board
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
Unit
V
V
A
A
C
C
40
40
1
20
150
40 to 150
Min.
Typ.
Max.
Unit
-
-
0.55
V
-
-
0.1
mA
1/4
Conditions
IF=1.0A
VR=40V
2011.12 - Rev.A
1000
10000
Ta=150°C
Ta=150°C
1000
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Data Sheet
RB162L-40
Ta=125°C
100
Ta=-25°C
Ta=25°C
10
Ta=125°C
100
10
Ta=75°C
1
0.1
Ta=25°C
Ta=75°C
0.01
Ta=-25°C
1
0.001
0
100
200
300
400
500
600
0
20
30
40
550
1000
f=1MHz
Osc.Lvl.=20mV
Ta=25°C
IF=1.0A
n=30pcs
545
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
10
540
535
530
525
520
515
510
AVE:517.1mV
505
1
500
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
5
220
Ta=25°C
VR=40V
n=30pcs
3
2
1
210
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(mA)
4
Ta=25°C
f=1MHz
n=20pcs
200
190
180
AVE:181.3pF
AVE:2.0mA
170
0
160
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
100
20
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RB162L-40
AVE:82.2A
90
80
70
1cyc
IFSM
60
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
15
10
AVE:8.667ns
5
8.3ms
0
50
trr DISPERSION MAP
IFSM DISPERSION MAP
200
1000
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
100
IFSM
150
100
50
0
10
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1.0
On glass-epoxy substrate
D.C.
D=1/2
0.8
Rth(j-a)
100
Rth(j-c)
10
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
t
Sin(θ＝180)
0.6
0.4
0.2
1
0.001
0.0
0.01
0.1
1
10
100
1000
0.0
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0.5
1.0
1.5
2.0
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.12 - Rev.A
Data Sheet
RB162L-40
0.2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
D=1/2
Sin(θ＝180)
T
1.5
VR=20V
Tj=150°C
D=1/2
1
Sin(θ＝180)
0.5
0
0
0
10
20
30
0
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
Io
0A
0V
2
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=t/T
DC
0.15
0.05
VR
t
D.C.
0.1
Io
0A
0V
2
VR
t
T
1.5
D=t/T
VR=20V
Tj=150°C
D=1/2
1
Sin(θ＝180)
0.5
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A