QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 zDimensions (Unit : mm) zStructure Silicon N-channel / P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions zApplication Power switching, DC / DC converter. Abbreviated symbol : M03 zEquivalent circuit zPackaging specifications Package (6) (5) (4) TR Code Type Taping Basic ordering unit (pieces) ∗2 3000 ∗2 QS6M3 ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP IS ISP PD ∗1 ∗1 ∗2 Tch Tstg Limits Tr1 : Nch Tr2 : Pch 30 −20 ±12 ±12 ±1.5 ±1.5 ±6.0 ±6.0 0.8 −0.75 6.0 −6.0 1.25 0.9 150 −55 to +150 (1) Unit V V A A A A W / TOTAL W / ELEMENT °C °C ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (Nch) Gate (2) Tr2 (Pch) Source (3) Tr2 (Pch) Gate (4) Tr2 (Pch) Drain (5) Tr1 (Nch) Source (6) Tr1 (Nch) Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol ∗ Rth (ch-a) Limits 100 139 Unit °C / W / TOTAL °C / W / ELEMENT ∗ Mounted on a ceramic board Rev.B 1/7 QS6M3 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − 30 − 0.5 − − − 1.0 − − − − − − − − − − Typ. Max. − − − − 170 180 260 − 80 25 15 7 18 15 15 1.6 0.5 0.9 ±10 − 1 1.5 230 245 360 − − − − − − − − − − − Unit µA V µA V Conditions S pF pF pF ns ns ns ns nC nC nC VGS=±12V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=1.5A, VGS=4.5V ID=1.5A, VGS=4.0V ID=1.0A, VGS=2.5V ID=1.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1A, VDD 15V VGS=4.5V RL=15Ω RG=10Ω VDD 15V RL=10Ω VGS=4.5V RG=10Ω ID=1.5A Unit V Conditions IS=3.2A, VGS=0V mΩ ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 ∗Pulsed Rev.B 2/7 QS6M3 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − ∗ Static drain-source on-state − RDS (on) resistance − Yfs ∗ 1.0 Forward transfer admittance − Input capacitance Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 155 170 310 − 270 40 35 10 12 45 20 3.0 0.8 0.85 ±10 − −1 −2.0 215 235 430 − − − − − − − − − − − Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID=1mA ID= −1.5A, VGS= −4.5V ID= −1.5A, VGS= −4.0V ID= −0.75A, VGS= −2.5V ID= −0.75A, VDS= −10V VDS= −10V VGS=0V f=1MHz ID= −0.75A, VDD −15V VGS= −4.5V RL=20Ω RG=10Ω VDD −15V RL=10Ω VGS= −4.5V RG=10Ω ID= −1.5A ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS= −0.75A, VGS=0V Rev.B 3/7 QS6M3 Transistors N-ch zElectrical characteristic curves 1000 Ciss Crss Coss 10 0.1 1 10 td (off) 10 td (on) tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : VDS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 1 0 0.5 10 1 1.5 10 0.8 ID=1.5A 0.7 ID=0.75A 0.6 2 Fig.3 Dynamic Input Characteristics VGS=0V Pulsed 0.5 0.4 0.3 0.2 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.5 10 1 VGS=4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.1 1 10 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0 GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.1 0.01 1 Ta=25°C Pulsed 0.9 Fig.4 Typical Transfer Characteristics 1 2 TOTAL GATE CHARGE : Qg (nC) 1.0 GATE-SOURCE VOLTAGE : VGS (V) 10 3 Fig.2 Switching Characteristics VDS=10V Pulsed 1 10 Ta=25°C VDD=15V 5 ID=1.5A RG=10Ω Pulsed 4 DRAIN CURRENT : ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 SOURCE CURRENT : Is (A) 1 0.01 tf 100 Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 6 Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 10 1 0.1 0.01 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 4/7 QS6M3 Transistors P-ch zElectrical characteristic curves 1000 Ciss 100 Coss Crss 0.1 1 10 tf 100 td (off) td (on) 10 tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) 5 4 3 2 1 0 0 0.5 500 Ta=25°C Pulsed 400 ID= −1.5A ID= −0.75A 300 200 100 0 0 2 4 6 8 1 1.5 2 2.5 3 3.5 Fig.3 Dynamic Input Characteristics 10 12 10 Ta=25°C VGS=0V Pulsed 1 0.1 0.01 0.0 0.5 1.0 1.5 2.0 GATE-SOURCE VOLTAGE : −VGS (V) GATE-SOURCE VOLTAGE : −VGS (V) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage 10000 1000 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 10 10000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 6 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics VDS= −10V Pulsed 1 10 Ta=25°C VDD= −15V ID= −1.5A RG=10Ω Pulsed 7 DRAIN CURRENT : −ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 REVERSE DRAIN CURRENT : −IS (A) 10 0.01 8 Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 10 10000 1000 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 10 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 5/7 QS6M3 Transistors N-ch zMeasurement circuit Pulse Width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Rev.B 6/7 QS6M3 Transistors P-ch zMeasurement circuit Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.3-1 Switching Time Measurement Circuit tf toff Fig.3-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Rev.B 7/7 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0