TSSS2600 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 • Peak wavelength: λp = 950 nm • • • • 94 8672 High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 25°, horizontal • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with detector TEST2600 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600) PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 2.6 ± 25 950 800 TSSS2600 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSSS2600 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage VR 5 V Forward current IF 100 mA mA PARAMETER TEST CONDITION UNIT Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 2.0 A PV 170 mW Power dissipation Junction temperature Operating temperature range Thermal resistance junction/ambient Rev. 1.7, 24-Aug-11 100 °C - 40 to + 100 °C Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C Leads not soldered RthJA 450 K/W Storage temperature range Soldering temperature Tj Tamb Document Number: 81042 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSS2600 www.vishay.com Vishay Semiconductors 125 IF - Forward Current (mA) PV - Power Dissipation (mW) 250 200 150 RthJA 100 50 100 0 75 RthJA 50 25 0 0 94 8029 20 40 60 80 100 0 Tamb - Ambient Temperature (°C) 94 7916 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.25 1.6 IF = 1.5 A, tp = 100 μs VF 2.2 IF = 100 mA TKVF - 1.3 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 2.6 V V mV/K 100 μA 3 mW/sr 30 1 UNIT pF IF = 1.5 A, tp = 100 μs Ie 25 IF = 100 mA, tp = 20 ms φe 20 mW IF = 100 mA TKφe - 0.8 %/K horizontal ϕ1 ± 25 deg mW/sr vertical ϕ2 ± 60 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 2 mm Rise time Fall time Virtual source diameter Rev. 1.7, 24-Aug-11 Document Number: 81042 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSS2600 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 4 1.6 1.2 Ie rel; Φe rel 10 2 10 1 0.8 0.4 10 0 10 -1 0 1 2 3 0 - 10 0 10 4 V F - Forward Voltage (V) 94 7996 50 Fig. 5 - Relative Radiant Intensity/Power vs. Ambient Temperature 100 Φe rel - Relative Radiant Power 1.25 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 10 0 94 7967 10 1 10 2 10 3 I F - Forward Current (mA) 0 900 10 4 Fig. 6 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 0° 100 10 1 1000 950 λ - Wavelength (nm) 94 7994 Fig. 3 - Radiant Intensity vs. Forward Current Φ e - Radiant Power (mW) 140 100 T amb - Ambient Temperature (°C) 94 7993 Fig. 2 - Pulse Forward Current vs. Forward Voltage I e - Radiant Intensity (mW/sr) IF = 20 mA 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I F - Forward Current (mA) 10 3 80° 0.1 1 13718 10 100 1000 I F - Forward Current (mA) Fig. 4 - Radiant Power vs. Forward Current Rev. 1.7, 24-Aug-11 0.6 94 7969 0.4 0.2 0 horizontal Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81042 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSS2600 www.vishay.com 0° Vishay Semiconductors 10° 20° ϕ - Angular Displacement I e rel - Relative Radiant Intensity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 vertical 94 7970 Fig. 2 - Relative Radiant Intensity vs. Angular Displacement 0.5 - 0.1 < 0.7 3.4 6.9 ± 0.3 ± 0.3 0.3 - 0.1 0.3 + 0.1 1.2 nom. PACKAGE DIMENSIONS in millimeters Area not plane ± 0.5 Emitter center 28.9 3.6 ± 0.15 0.65 C + 0.1 - 0.15 1.8 ± 0.15 2.2 ± 0.15 A 0.5 + 0.2 - 0.1 0.4 ± 0.15 0.4 + 0.15 R 0.3 0.6 x 45° 2.54 nom. 5 0.7 technical drawings according to DIN specifications 60° Drawing-No.: 6.544-5241.01-4 Issue: 3; 18.04.96 95 11488 Rev. 1.7, 24-Aug-11 Document Number: 81042 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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