Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N7002T
Power MOSFET
300mA, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N7002T uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES

* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

2N7002TG-AN3-R
Pin Assignment: G: Gate D: Drain
Package
SOT-523
1
S
Pin Assignment
2
3
G
D
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-542.C
2N7002T

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤1MΩ)
Continuous
Gate Source Voltage
Non Repetitive(tp<50μs)
Continuous
Drain Current
Pulsed
Power Dissipation
Derated Above 25°C
Junction Temperature
Storage Temperature
SYMBOL
VDSS
VDGR
RATINGS
60
60
20
40
300
800
200
1.6
+ 150
-55 ~ +150
VGSS
ID
PD
TJ
TSTG
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
625 (Note1)
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSSF
IGSSR
VGS=0V, ID=10μA
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
60
ON CHARACTERISTICS (Note2)
Gate Threshold Voltage
VGS(TH)
1
Drain-Source On-Voltage
VDS (ON)
Static Drain-Source On-Resistance
RDS (ON)
VGS = VDS, ID=250μA
VGS = 10V, ID=300mA
VGS = 5.0V, ID=50mA
VGS=10V, ID=300mA
VGS =5.0V, ID=50mA
Gate-Source Leakage Current
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
MAX UNIT
1
100
-100
2.1
0.6
0.09
VDS=25V,VGS=0V, f=1.0MHz
VDD=30V, RL=150Ω, ID=200mA,
VGS =10V, RGEN =25Ω
VDD=30V, RL=25Ω, ID=200mA,
Turn-Off Time
tOFF
VGS=10V, RGEN =25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=300mA (Note )
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Maximum Continuous Drain-Source
Is
Diode Forward Current
Turn-On Time
TYP
20
11
4
tON
0.88
V
μA
nA
nA
2.5
3.75
1.5
13.5
7.5
V
Ω
Ω
50
25
5
pF
pF
pF
20
nS
20
nS
1.5
V
0.8
A
300
mA
V
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-542.C
2N7002T

Power MOSFET
TEST CIRCUIT AND WAVEFORM
VDD
RL
VIN
VOUT
D
VGS
RGEN
DUT
G
S
Fig. 1
tON
tOFF
tD(ON)
tR
tD(OFF)
tF
90%
90%
Output, VOUT
10%
10%
Inverted
90%
Input, VIN
50%
50%
10%
Pulse Width
Fig. 2 Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-542.C
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