2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead Free, Full RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Notes 2 and 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc • • Case: SOT523 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) Drain SOT523 D Gate G S Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number 2N7002T-7-F 2N7002T-13-F 2N7002TQ-7-F 2N7002TQ-13-F Notes: Qualification Commercial Commercial Automotive Automotive Case SOT523 SOT523 SOT523 SOT523 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 72 Date Code Key Year Code Month Code 2005 S Jan 1 2006 T Feb 2 2N7002T Document number: DS30301 Rev. 14 - 2 Mar 3 72 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YM 2007 U Apr 4 2008 V May 5 Jun 6 1 of 5 www.diodes.com 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O 2012 Z Nov N Dec D April 2012 © Diodes Incorporated 2N7002T Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VDGR Units V V ID Value 60 60 ±20 ±40 115 73 800 Symbol Pd RθJA Tj, TSTG Value 150 833 -55 to +150 Units mW °C/W °C Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS V mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-Off Delay Time Notes: @ TC = 25°C @ TC = 125°C @ Tj = 25°C @ Tj = 125°C Symbol Min Typ Max Unit Test Condition BVDSS 60 ⎯ V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ⎯ 1.0 500 ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 2.0 7.5 13.5 V ⎯ ⎯ A mS VDS = VGS, ID = 250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A RDS (ON) ⎯ ID(ON) gFS 0.5 80 ⎯ 2.0 4.4 1.0 ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2N7002T Document number: DS30301 Rev. 14 - 2 2 of 5 www.diodes.com April 2012 © Diodes Incorporated 2N7002T VGS = 10V 0.9 ID , DRAIN-SOURCE CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.0 VGS = 7.0V 0.8 0.7 VGS = 6.0V 0.6 VGS = 5.0V 0.5 VGS = 4.0V 0.4 0.3 VGS = 3.0V 0.2 0.1 0 0 VGS = 2.5V 1 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics VGS = 3.0V 3 VGS = 4.0V 2 VGS = 5.0V 1.5 1.0 0.5 0 -50 f = 1MHz 50 40 30 Ciss Coss 10 Crss 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 2N7002T Document number: DS30301 Rev. 14 - 2 2.0 1.5 1.0 0.5 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE (° C) Fig. 4 On-Resistance Variation with Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 60 VGS = 10V ID = 500mA 2.5 0 -50 -25 50 75 100 125 150 0 25 TJ, JUNCTION TEMPERATURE (° C) Fig. 3 Gate Threshold Variation with Temperature 0 VGS = 10V 3.0 2.0 0 VGS = 7.0V 1 ID = 250µA 20 VGS = 6.0V 0.6 0.2 0.4 1.0 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS(th), GATE THRESHOLD VOLTAGE (V) 4 0 5 2.5 C, CAPACITANCE (pF) 5 30 3 of 5 www.diodes.com 5.0 4.5 4.0 3.5 3.0 2.5 ID = 50mA 2.0 1.5 1.0 0.5 0 0 10 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage April 2012 © Diodes Incorporated 2N7002T Package Outline Dimensions A SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G H K M N J L D Suggested Pad Layout Y Z C X 2N7002T Document number: DS30301 Rev. 14 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 4 of 5 www.diodes.com April 2012 © Diodes Incorporated 2N7002T IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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