AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It is ESD protected. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD486A is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 40V ID = 50 A (VGS = 10V) RDS(ON) < 9.8 mΩ (VGS = 10V) RDS(ON) < 13 mΩ (VGS = 4.5V) ESD PROTECTED UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Avalanche Current C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B A ±20 V Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. 100 IAR 30 A EAR 135 mJ 36 50 4.1 W 2.7 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C A ID IDM PD TC=100°C TA=25°C Power Dissipation Units V 50 TC=100°C Pulsed Drain Current Maximum 40 RθJA RθJC Typ 17.4 45 1.2 °C Max 30 60 3 Units °C/W °C/W °C/W www.aosmd.com AOD486A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V TJ=125°C gFS Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA ±100 µA 2 3 V 8.1 9.8 12.15 16 10.8 13 mΩ 1 V 50 A 1920 pF 100 VGS=4.5V, ID=5A IS V 5 1 VGS=10V, ID=20A Static Drain-Source On-Resistance Units 1 TJ=55°C IGSS Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ A 47 0.76 1600 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A mΩ S 320 pF 100 pF 3.4 Ω 22 nC 10.5 nC Qgs Gate Source Charge 4.2 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 12.5 ns 33 ns 16 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The package is limited to a maximum of 25A continuous current. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD486A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 80 -40°C VDS=5V 5V 25°C 80 4V 125°C 60 ID(A) ID (A) 60 40 40 VGS=3.5V 20 20 VGS=3V -40°C 125°C 25°C 0 0 0 1 2 3 4 2 5 2.5 3 3.5 14 1.6 Normalized On-Resistance 12 RDS(ON) (mΩ) 4.5 10 VGS=10V 8 6 0 5 10 15 20 25 5 5.5 500 150 60 VGS=4.5V 30 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 0.6 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 ID=20A 35 1.0E+00 30 125°C 1.0E-01 IS (A) RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25 1.0E-02 125°C 20 1.0E-03 -40°C 15 1.0E-04 25°C 10 25°C 1.0E-05 5 0.0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD486A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=20V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1600 1200 800 Coss Crss 2 400 0 0 4 8 12 16 20 0 24 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 100µs DC 1ms 1.0 TJ(Max)=175°C TC=25°C 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 500 150 60 TJ(Max)=175°C Tc=25°C 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 15 160 Power (W) ID (Amps) 100µ 10.0 0.1 10 200 RDS(ON) limited 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD486A 110 55 100 50 90 45 Power Dissipation (W) ID(A), Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 70 60 TA=150°C TA=25°C 50 40 30 20 10 40 35 30 25 20 15 10 5 0 0 0.000001 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 125 150 175 500 150 60 100 90 50 TA=25°C 80 70 40 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) 60 30 20 60 50 40 30 20 10 10 0 0 0 25 50 75 100 125 150 0.001 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 50 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com