AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose applications. Features VDS (V) = 25V (VGS = 10V) ID = 60 A RDS(ON) < 4 mΩ (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View G G S G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG Maximum 25 Units V ±20 V VGS TC=25°C 60 TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C TA=25°C Maximum Junction-to-Case B 47 IDM 165 IAR 45 EAR 304 PD Alpha & Omega Semiconductor, Ltd. mJ W 37 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A 75 2.0 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ID RθJA RθJC W 1.3 -55 to 175 Typ 18 50 1 Max 25 60 2 °C Units °C/W °C/W °C/W www.aosmd.com AOD4128 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 25 V VDS=25V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 165 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 5.8 gFS Forward Transconductance VDS=5V, ID=20A 55 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG TJ=55°C VGS=10V, ID=20A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 1.6 VGS=10V, VDS=12.5V, ID=20A 5.0 100 nA 2.5 V 4 6 7 mΩ mΩ S 1 V 60 A 3578 4300 pF 731 950 pF 438 615 pF 2.5 4 Ω 61.8 80 nC 29.8 39 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 39 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 32 VGS=10V, VDS=12.5V, RL=0.63Ω, RGEN=3Ω uA A 3.4 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss 5 8.5 nC 12.9 nC 11.6 ns 17.7 ns 45 ns 20 ns 48 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Re1: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4128 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 165 60 150 VDS=5V 4.5V 10V 50 135 120 5V 40 4V 90 ID(A) ID(A) 105 75 125°C 30 3.5V 60 20 45 VGS=3V 30 25°C 10 -40°C 15 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 0 8.0 Normalized On-Resistance RDS(ON) (mΩ ) 2 3 VGS(Volts) Figure 2: Transfer Characteristics 4 1.8 7.0 VGS=4.5V 6.0 5.0 4.0 VGS=10V 3.0 2.0 ID=20A VGS=10V 1.6 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 25 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 1.0E+02 ID=20A 10 1.0E+01 125°C 1.0E+00 8 IS (A) RDS(ON) (mΩ ) 1 TC=100°C 25°C 1.0E-02 TA25°C =25°C 6 125°C 1.0E-01 1.0E-03 -40°C -55 to 175 4 1.0E-04 -40°C 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AOD4128 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 Ciss 4000 Capacitance (pF) VGS (Volts) 4500 VDS=12.5V ID=20A 8 6 4 2 3500 3000 2500 2000 Coss 1500 1000 500 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 1000 100 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 500 RDS(ON) limited 10us 100us 10 1ms DC 10ms 1 TJ(Max)=175°C TC=25°C 0.1 0.01 TJ(Max)=175°C TC=25°C 400 Power (W) ID (Amps) Crss 0 300 200 100 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, single pulse PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4128 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 150 Power Dissipation (W) ID(A), Peak Avalanche Current 200 TA=25°C 100 50 80 60 40 20 0 0 0.00001 0.0001 0 0.001 500 80 400 Power (W) Current rating ID(A) 100 60 40 20 50 75 100 125 150 175 300 200 100 0 0 25 50 75 100 125 150 175 0 1E-05 1E-04 0.001 0.01 TCASE (°C) Figure 14: Current De-rating (Note B) 10 Zθ JA Normalized Transient Thermal Resistance 25 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 0.0001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4128 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com