Datasheet

AOD4T60/AOI4T60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4T60 & AOI4T60 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
VDS @ Tj,max
700V
IDM
16A
RDS(ON),max
< 2.1Ω
Qg,typ
9nC
Eoss @ 400V
1.6µJ
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
TO251A
IPAK
Top View
Bottom View
D
Bottom View
D
D
G
S
G
S
G
AOD4T60
D
G
S
Gate-Source Voltage
VGS
TC=25°C
TC=100°C
S
AOI4T60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Continuous Drain
CurrentB
G
D
S
Maximum
600
Units
V
±30
V
4
ID
2.5
A
Pulsed Drain Current C
IDM
Avalanche Current C,K
IAR
4
A
Repetitive avalanche energy C,K
EAR
8
mJ
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
145
50
5
83
mJ
V/ns
0.7
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
dv/dt
PD
TJ, TSTG
TL
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-CaseD,F
RθJC
Rev.1.0 September 2013
16
W
Typical
40
Maximum
50
Units
°C/W
1.25
0.5
1.5
°C/W
°C/W
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Page 1 of 6
AOD4T60/AOI4T60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V, ID=250µA
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.6
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
±100
3
µA
4.2
5
nΑ
V
2.1
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1A
1.75
gFS
Forward Transconductance
VDS=40V, ID=2A
2.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79
S
IS
Maximum Body-Diode Continuous Current
4
A
ISM
Maximum Body-Diode Pulsed Current C
16
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related I
Crss
Effective output capacitance, time
related J
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
460
pF
22
pF
19
pF
31
pF
VGS=0V, VDS=100V, f=1MHz
3.5
pF
f=1MHz
5.7
Ω
VGS=10V, VDS=480V, ID=4A
3.5
nC
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
9
15
nC
Qgd
Gate Drain Charge
2.4
nC
tD(on)
Turn-On DelayTime
20
ns
27
ns
25
ns
17
ns
ns
µC
VGS=10V, VDS=300V, ID=4A,
RG=25Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=4A,dI/dt=100A/µs,VDS=100V
384
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
3.9
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.2A, VDD=150V, RG=10Ω, Starting TJ=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
K. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 September 2013
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Page 2 of 6
AOD4T60/AOI4T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7.5
100
VDS=40V
6
10V
-55°C
10
4.5
ID(A)
ID (A)
7.5V
7V
3
1
6.5V
125°C
1.5
VGS=6V
25°C
0
0.1
0
5
10
15
20
25
VDS (Volts)
Fig 1: On-Region Characteristics
30
2
5
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
3
4
RDS(ON) (Ω )
4
VGS=10V
3
2
1
2.5
VGS=10V
ID=1A
2
1.5
1
0.5
0
0
0
1.5
-100
3
4.5
6
7.5
9
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
1E+02
ID=30A
40
1E+00
1
IS (A)
BVDSS (Normalized)
1E+01
1.1
125°C
125°C
1E-01
25°C
1E-02
0.9
25°C
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0 September 2013
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0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1
Page 3 of 6
AOD4T60/AOI4T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=480V
ID=4A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
100
Coss
10
Crss
3
1
0
0
3
6
9
12
0.1
15
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
3.5
3
10
ID (Amps)
Eoss(uJ)
2.5
2
Eoss
10µs
RDS(ON)
limited
100µs
1
1.5
1ms
DC
1
10ms
0.1
TJ(Max)=150°C
TC=25°C
0.5
0.01
0
0
100
200
300
400
VDS (Volts)
Figure 9: Coss stored Energy
500
1
600
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
1000
50
150
5
75
Current rating ID(A)
Power Dissipation (W)
90
10
60
45
30
4
3
2
1
15
0
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Power De-rating (Note B)
Rev.1.0 September 2013
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0
25
75
100
125
TCASE (°C)
Figure 12: Current De-rating (Note B)
Page 4 of 6
AOD4T60/AOI4T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
500
TJ(Max)=150°C
TC=25°C
600
400
200
TJ(Max)=150°C
TA=25°C
400
Power (W)
Power (W)
800
300
200
100
0
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-toCase (Note F)
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
10
100
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
Rev.1.0 September 2013
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
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100
1000
Page 5 of 6
AOD4T60/AOI4T60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 September 2013
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6