AOSMD AOWF15S60

AOW15S60/AOWF15S60
600V 15A α MOS TM Power Transistor
General Description
Product Summary
The AOW15S60 & AOWF15S60 have been fabricated
using the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700V
IDM
63A
RDS(ON),max
0.29Ω
Qg,typ
16nC
Eoss @ 400V
3.6µJ
100% UIS Tested
100% Rg Tested
TO-262
Top View
TO-262F
Top View
Bottom View
G
D
S
S
D
D
Bottom View
G
G
S
D
G
AOWF15S60
AOW15S60
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOW15S60
Parameter
Symbol
Drain-Source Voltage
VDS
600
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOWF15S60
±30
15
ID
Units
V
V
15*
10
10*
A
Pulsed Drain Current C
IDM
63
Avalanche Current C
IAR
2.4
A
Repetitive avalanche energy C
EAR
86
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
PD
173
27.8
W
1.67
0.22
W/ oC
100
20
-55 to 150
dv/dt
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
V/ns
°C
300
°C
AOW15S60
AOWF15S60
65
65
°C/W
0.5
0.6
-4.5
°C/W
°C/W
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev 0: Aug 2011
mJ
208
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Units
Page 1 of 6
AOW15S60/AOWF15S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
-
±100
3.2
3.8
nΑ
V
VGS=10V, ID=7.5A, TJ=25°C
-
0.254
0.29
Ω
VGS=10V, ID=7.5A, TJ=150°C
-
0.68
0.78
Ω
IS=7.5A,VGS=0V, TJ=25°C
-
0.83
-
V
Maximum Body-Diode Continuous Current
-
-
15
A
Maximum Body-Diode Pulsed CurrentC
-
-
63
A
-
717
-
pF
-
58
-
pF
-
41.2
-
pF
-
125.2
-
pF
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
2.5
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
-
1.3
-
pF
VGS=0V, VDS=0V, f=1MHz
-
13.4
-
Ω
-
15.6
-
nC
-
3.5
-
nC
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=7.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
6.0
-
tD(on)
Turn-On DelayTime
-
24.5
-
ns
tr
Turn-On Rise Time
-
22
-
ns
-
84
-
ns
-
24
-
ns
IF=7.5A,dI/dt=100A/µs,VDS=400V
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=400V, ID=7.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
282
-
ns
Irm
IF=7.5A,dI/dt=100A/µs,VDS=400V
-
26
-
Qrr
Body Diode Reverse Recovery Charge IF=7.5A,dI/dt=100A/µs,VDS=400V
-
4.5
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.4A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2011
www.aosmd.com
Page 2 of 6
AOW15S60/AOWF15S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
10V
20
7V
5.5V
10
6V
15
6V
ID (A)
ID (A)
20
15
10V
7V
25
5.5V
10
5V
5V
5
5
VGS=4.5V
VGS=4.5V
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
100
1.0
VDS=20V
0.8
10
RDS(ON) (Ω )
125°C
ID(A)
-55°C
1
25°C
0.1
VGS=10V
0.6
0.4
0.2
0.0
0.01
2
4
6
8
0
10
10
15
20
25
30
35
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=7.5A
BVDSS (Normalized)
Normalized On-Resistance
5
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev 0: Aug 2011
www.aosmd.com
0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 6
AOW15S60/AOWF15S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
VDS=480V
ID=7.5A
12
25°C
1.0E-01
9
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
5
10
15
20
25
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
8
1000
Eoss(uJ)
Capacitance (pF)
Ciss
Coss
100
Crss
10
6
Eoss
4
2
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
0
600
100
200
300
400
VDS (Volts)
Figure 10: Coss stroed Energy
500
100
100
10µs
RDS(ON)
limited
10µs
100µs
1ms
1
DC
10ms
10
ID (Amps)
10
ID (Amps)
600
RDS(ON)
limited
100µs
1ms
1
10ms
0.1s
1s
10s
DC
0.1
0.1
TJ(Max)=150°C
TC=25°C
0.01
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOW15S60 (Note F)
Rev 0: Aug 2011
www.aosmd.com
0.1
1
10
VDS (Volts)
100
1000
Figure 12: Maximum Forward Biased Safe
Operating Area for AOWF15S60(Note F)
Page 4 of 6
AOW15S60/AOWF15S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
20
Current rating ID(A)
EAS(mJ)
160
120
80
40
0
15
10
5
0
25
50
75
100
125
TCASE (°C)
Figure 13: Avalanche energy
150
175
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOW15S60 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOWF15S60 (Note F)
Rev 0: Aug 2011
www.aosmd.com
Page 5 of 6
AOW15S60/AOWF15S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 0: Aug 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6