VS-ST083SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 85 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance • Compression bonding TO-209AC (TO-94) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-209AC (TO-94) Diode variation Single SCR IT(AV) 85 A VDRM/VRRM 400 V to 1200 V VTM 2.15 V • Induction heating ITSM at 50 Hz 2450 A • All types of force-commutated converters ITSM at 60 Hz 2560 A IGT 200 mA TC/Ths 85 °C TYPICAL APPLICATIONS • Inverters • Choppers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS I2t 85 A 85 °C A 50 Hz 2450 A 60 Hz 2560 A 50 Hz 30 60 Hz 27 VDRM/VRRM tq UNITS 135 TC IT(RMS) ITSM VALUES Range TJ kA2s 400 to 1200 V 10 to 20 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 VS-ST083S IDRM/IRRM MAX. AT TJ = TJ MAX. mA 30 Revision: 26-Mar-14 Document Number: 94334 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 100 μs 180° el 180° el UNITS 50 Hz 210 120 330 270 2540 400 Hz 200 120 350 210 1190 810 1000 Hz 150 80 320 190 630 400 2500 Hz 70 25 220 85 250 100 Recovery voltage Vr 50 50 50 50 50 Voltage before turn-on Vd VDRM VDRM 1930 A 50 V VDRM Rise of on-state current dI/dt 50 50 - - - - A/μs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 SYMBOL TEST CONDITIONS W/μF ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one half cycle, non-repetitive surge current IT(AV) IT(RMS) ITSM 180° conduction, half sine wave 135 2450 100 % VRRM reapplied 2060 t = 10 ms t = 8.3 ms No voltage reapplied 2560 Sinusoidal half wave, initial TJ = TJ maximum 30 27 21 I2t t = 0.1 ms to 10 ms, no voltage reapplied 300 VTM kA2s 19 ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.15 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.46 High level value of threshold voltage VT(TO)2 Maximum peak on-state voltage A 2160 100 % VRRM reapplied t = 10 ms t = 8.3 ms Maximum I2t for fusing °C No voltage reapplied t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms UNITS 85 DC at 77 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES (I > x IT(AV)), TJ = TJ maximum 1.52 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 2.32 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 2.34 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current SYMBOL dI/dt TEST CONDITIONS VALUES MIN. MAX. TJ = TJ max., VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 0.80 Typical delay time td TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source Maximum turn-off time tq TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/μs VR = 50 V, tp = 200 μs, dV/dt = 200 V/μs UNITS A/μs μs 10 20 Revision: 26-Mar-14 Document Number: 94334 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES UNITS 500 V/μs 30 mA VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TEST CONDITIONS 40 TJ = TJ maximum, f = 50 Hz, d% = 50 5 5 TJ = TJ maximum, tp 5 ms 20 5 200 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM/VRRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.195 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) See dimensions - link at the end of datasheet TO-209AC (TO-94) Maximum junction operating temperature range Mounting torque, ± 10 % Approximate weight 130 Case style °C K/W N·m (lbf · in) g RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.034 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 26-Mar-14 Document Number: 94334 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com Vishay Semiconductors 130 ST083S Series RthJC (DC) = 0.195 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 120 110 Ø Conduction angle 100 90 30° 60° 90° 120° ST083S Series RthJC (DC) = 0.195 K/W 120 110 Ø Conduction period 100 90 30° 60° 90° 120° 80 180° 0 10 20 30 40 50 60 70 90 80 0 20 Average On-State Current (A) DC 180 Maximum Average On-State Power Loss (W) ST083S Series TJ = 125 °C 20 0 W W K/ W R 40 0.5 120 K/ -Δ Conduction angle 140 K/ W W Ø 0.4 K/ K/ 80 2 3 1 100 0. 0. 160 0. RMS limit 60 140 = 120 120 SA 140 100 R th 160 80 Fig. 2 - Current Ratings Characteristics 180 180° 120° 90° 60° 30° 60 40 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-State Power Loss (W) 180° 70 80 100 0.8 80 1.2 60 K/W K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 25 Average On-State Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics 250 DC 180° 120° 90° 60° 30° 200 150 R RMS limit Ø 100 Conduction period ST083S Series TJ = 125 °C 50 0 Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 250 th 0.2 200 SA K/ W 0.3 0.4 150 0.5 100 K/W = 0. 1 K/ W -Δ R K/W K/W 0.8 K/W 1.2 K /W 50 0 0 20 40 60 80 100 120 Average On-State Current (A) 140 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 26-Mar-14 Document Number: 94334 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com At any rated load condition and with rated VRRM applied following surge Peak Half Sine Wave On-State Current (A) 2000 Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1800 1600 1400 1200 ST083S Series 1000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) ZthJC - Transient Thermal Impedance (K/W) 2200 Vishay Semiconductors 1 Steady state value RthJC = 0.195 K/W (DC operation) 0.1 ST083S Series 0.01 0.001 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic 160 Qrr - Maximum Reverse Recovery Charge (µC) 2600 Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained 2400 2200 Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 2000 1800 1600 1400 ST083S Series 1000 0.01 ITM = 500 A ST083S Series TJ = 125 °C 140 ITM = 300 A 120 ITM = 200 A 100 ITM = 100 A 80 60 ITM = 50 A 40 20 0.1 10 1 20 30 40 50 60 70 80 90 100 Pulse Train Duration (s) dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovered Charge Characteristics 120 10 000 TJ = 25 °C 1000 TJ = 125 °C ST083S Series Irr - Maximum Reverse Recovery Current (A) Peak Half Sine Wave On-State Current (A) Instantaneous On-State Current (A) 0.1 Square Wave Pulse Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current 1200 0.01 ITM = 500 A 110 ITM = 300 A 100 ITM = 200 A 90 80 ITM = 100 A 70 60 50 ITM = 50 A 40 ST083S Series TJ = 125 °C 30 20 10 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 10 20 30 40 50 60 70 80 90 100 Instantaneous On-State Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - On-State Voltage Drop Characteristics Fig. 10 - Reverse Recovery Current Characteristics Revision: 26-Mar-14 Document Number: 94334 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 1000 100 1500 1000 500 400 200 2000 2500 3000 100 50 Hz ST083S Series Sinusoidal pulse TC = 60 °C tp 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Vishay Semiconductors Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 1000 50 Hz 1000 1500 2000 2500 100 400 500 100 3000 ST083S Series Sinusoidal pulse TC = 85 °C tp 10 200 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 10 000 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 500 1000 50 Hz 1500 100 2000 2500 1000 400 200 100 ST083S Series Trapezoidal pulse TC = 60 °C dI/dt = 50 A/µs 3000 tp Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM ST083S Series Trapezoidal pulse TC = 85 °C dI/dt = 50 A/µs tp 1000 50 Hz 500 1500 100 400 200 100 1000 2000 2500 10 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 1000 400 50 Hz 1000 1500 200 500 2000 100 2500 3000 tp 100 ST083S Series Trapezoidal pulse TC = 60 °C dI/dt = 100 A/µs 10 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 ST083S Series Trapezoidal pulse TC = 85 °C dI/dt = 100 A/µs tp Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 1000 400 50 Hz 500 100 200 1500 100 1000 2000 2500 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Revision: 26-Mar-14 Document Number: 94334 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com Vishay Semiconductors 10 000 20 joules per pulse 0.5 1000 1 2 3 5 Peak On-State Current (A) Peak On-State Current (A) 10 000 10 0.3 0.2 0.1 100 ST083S Series Sinusoidal pulse tp ST083S Series Rectangular pulse dI/dt = 50 A/µs 4 1000 20 joules per pulse 7.5 2 1 0.5 0.3 0.2 100 0.1 tp 10 10 10 100 1000 10 10 000 100 1000 10 000 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (a) (b) TJ = 40 °C 1 TJ = 25 °C TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST083S Series 0.1 Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Revision: 26-Mar-14 Document Number: 94334 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST083SP Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 08 3 S 12 P F N 0 L P 1 2 3 4 5 6 7 8 9 10 11 12 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 1/2"-20UNF-2A threads M = Metric M12, contact factory for availability 8 - Reapplied dV/dt code (for tq test condition) dV/dt - tq combinations available - tq code dV/dt (V/µs) t (µs) 10 q 0 = Eyelet terminals (gate and aux. cathode leads) 10 20 up to 800V 1 = Fast-on terminals (gate and aux. cathode leads) tq (µs) 2 = Flag terminals (gate and aux. cathode leads) 20 only for 1000/1200 V 11 - Critical dV/dt: 9 200 FN FK FK None = 500 V/µs (standard value) L = 1000 V/µs (special selection) 12 - None = Standard production; P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95003 Revision: 26-Mar-14 Document Number: 94334 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AC (TO-94) for ST083S and ST103S Series DIMENSIONS in millimeters (inches) Ceramic housing 37 )M IN . 2.6 (0.10) MAX. 16.5 (0.65) MAX. (0. Ø 8.5 (0.33) 9 .5 Ø 4.3 (0.17) Flexible lead 20 (0.79) MIN. C.S. 16 mm2 (0.025 s.i.) C.S. 0.4 mm2 Red silicon rubber (0.0006 s.i.) Red cathode 157 (6.18) 170 (6.69) White gate Red shrink 70 (2.75) MIN. 215 ± 10 (8.46 ± 0.39) White shrink Ø 22.5 (0.88) MAX. 29 (1.14) MAX. 12.5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Document Number: 95003 Revision: 30-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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