VS-ST110SPbF Series Datasheet

VS-ST110SPbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with
(Glass-metal seal over 1200 V)
TO-209AC (TO-94)
ceramic insulator
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IT(AV)
110 A
VDRM/VRRM
400 V, 1600 V
VTM
1.52 V
IGT
150 mA
TJ
-40 °C to 140 °C
Package
TO-209AC (TO-94)
Diode variation
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers




MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
110
A
90
°C
175
IT(RMS)
ITSM
I2t
50 Hz
2700
60 Hz
2830
50 Hz
36.4
60 Hz
33.2
VDRM/VRRM
400 to 1600
Typical
tq
TJ
A
kA2s
V
100
μs
-40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
VS-ST110S
20
Revision: 11-Mar-14
Document Number: 94393
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
175
No voltage
reapplied
100 % VRRM
reapplied
2270
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
°C
2700
t = 10 ms
I2t
A
90
t = 10 ms
t = 8.3 ms
No voltage
reapplied
2830
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM 
reapplied
36.4
33.2
25.8
t = 0.1 to 10 ms, no voltage reapplied
364
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.90
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
0.92
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
1.79
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
1.81
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.52
Maximum holding current
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
23.5
VT(TO)1
VTM
A
2380
Low level value of threshold voltage
Maximum on-state voltage
UNITS
110
DC at 85 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
VALUES
UNITS
Gate drive 20 V, 20 , tr  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
500
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
2.0
Typical turn-off time
tq
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs, 
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of 
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and 
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
20
mA
Revision: 11-Mar-14
Document Number: 94393
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VS-ST110SPbF Series
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
DC gate current required to trigger
IGT
TJ = TJ maximum, f = 50 Hz, d% = 50
1
TJ = TJ maximum, tp  5 ms
A
20
V
5.0
TJ = -40 °C
180
-
TJ = 25 °C
90
150
40
-
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
TJ = 25 °C
IGD
TJ = TJ maximum
DC gate voltage not to trigger
W
2.0
TJ = 125 °C
DC gate current not to trigger
UNITS
MAX.
5
TJ = -40 °C
VGT
TYP.
TJ = TJ maximum, tp  5 ms
TJ = 125 °C
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
VGD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
2.9
-
1.8
3.0
1.2
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction 
temperature range
TEST CONDITIONS
TJ
-40 to 125
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.195
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
°C
K/W
Non-lubricated threads
Mounting torque, ± 10 %
15.5 (137)
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
14 (120)
Nm
(lbf · in)
130
g
TO-209AC (TO-94)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.035
0.025
120°
0.041
0.042
90°
0.052
0.056
60°
0.076
0.079
30°
0.126
0.127
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 11-Mar-14
Document Number: 94393
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130
ST110S Series
RthJC (DC) = 0.195 K/W
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Angle
100
90
30°
60°
90°
120°
180°
80
0
20
40
60
80
100
120
ST110S Series
RthJC (DC) = 1.95 K/W
120
110
Conduction Period
30°
100
60°
90
90°
120°
180°
80
0
20
Average On-state Current (A)
W
K/
.1
=0
K/
W
K/
W
SA
R th
K/
W
e lt
-D
RMS Limit
W
K/
0.
6
2
0.
100
0.
4
0.
5
W
K/
120
3
0.
0.8
a
K/
W
1K
/W
80
60
R
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
140
40 60 80 100 120 140 160 180
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
160
DC
1.2
K/ W
Conduction Angle
40
ST110S Series
TJ = 125°C
20
0
0
20
40
60
80
100
120
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
220
=
1
0.
K/
W
W
K/
0.4
100 RMS Limit
80
Conduction Period
60
K/
W
0.5
K/
W
0.6
K/
W
0.8
K/ W
1K
/W
R
120
ta
el
-D
140
0.
3
A
160
W
K/
180
hS
R t
DC
180°
120°
90°
60°
30°
200
2
0.
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
1.2
K/ W
40
ST110S Series
TJ = 125°C
20
0
0
20 40
60 80 100 120 140 160 180
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94393
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2200
2000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
2400
Vishay Semiconductors
1800
1600
1400
1200
ST110S Series
1000
1
10
100
2800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
2400
Initial TJ = 125°C
No Voltage Reapplied
2200
Rated VRRM Reapplied
2600
2000
1800
1600
1400
1200
ST110S Series
1000
0.01
0.1
1
10
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
Tj = 25˚C
100
Tj = 125˚C
ST110S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z
thJC (K/W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.195 K/W
(DC Operation)
0.1
0.01
ST110S Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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Document Number: 94393
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VS-ST110SPbF Series
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Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
VGD
IGD
0.1
0.001
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(1)
0.1
(3) (4)
Frequency Limited by PG(AV)
Device: ST110S Series
0.01
(2)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
11
0
S
16
P
0
V
L
PbF
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part marking
4
-
0 = Converter grade
5
-
S = Compression bonding stud
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = Stud base 20UNF threads
8
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (for cathode and gate terminals)
9
-
10
-
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
11
-
None = Standard production
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95078
Revision: 11-Mar-14
Document Number: 94393
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST110S Series
DIMENSIONS in millimeters (inches)
Glass metal seal
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
2
C.S. 16 mm
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
215 ± 10
(8.46 ± 0.39)
Fast-on terminals
Red shrink
70 (2.75)
MIN.
White shrink
AMP. 280000-1
REF-250
Ø 23.5 (0.93) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95078
Revision: 23-Sep-08
For technical questions, contact: [email protected]
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1
Outline Dimensions
TO-209AC (TO-94) for ST110S Series
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Ceramic housing
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
Red shrink
70 (2.75)
MIN.
215 ± 10
(8.46 ± 0.39)
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
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Document Number: 95078
Revision: 23-Sep-08
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