Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT60T03
Power MOSFET
30V, 45A N-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
The UT60T03 can provide excellent RDS(ON) and low gate
charge by using UTC’s advanced trench technology.

FEATURES
* Very simple drive requirement
* Very low gate charge
* Fast switching

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT60T03L-TF3-T
UT60T03G-TF3-T
TO-220F
UT60T03L-TF3-R
UT60T03G-TF3-R
TO-220F
UT60T03L-TN3-R
UT60T03G-TN3-R
TO-252
UT60T03L-TQ2-R
UT60T03G-TQ2-R
TO-263
UT60T03L-TQ2-T
UT60T03G-TQ2-T
TO-263
UT60T03G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1
G
G
G
G
G
S
2
D
D
D
D
D
S
Pin Assignment
3 4 5 6 7
S S S S S S G D D D
8
D
Packing
Tube
Tape Reel
Tape Reel
Tape Reel
Tube
Tape Reel
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UT60T03

Power MOSFET
MARKING
TO-220F / TO-252 / TO-262

DFN-8(5×6)
PIN CONFIGURATION
Source 1
8 Drain
Gate
4
7 Drain
Source
3
Source 3
6 Drain
Source
2
Gate 4
5 Drain
Source
1
Source 2
Top View
Bottom
View
5
Drain
6
Drain
7
Drain
8
Drain
DFN-8(5×6)
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UT60T03

Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
RATINGS
UNIT
30
V
±20
V
45
A
120
A
TO-220F
56
TO-252
44
Power Dissipation (TC=25°C)
PD
W
TO-263
54
DFN-8(5×6)
21
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.

SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220F
TO-252
TO-263
DFN-8(5×6)
TO-220F
TO-252
TO-263
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
110
62
46
2.66
3.4
1.24
6
UNIT
°C/W
°C/W
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UT60T03

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
IDSS
Gate-Body Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-Resistance(Note 1)
RDS(ON)
TEST CONDITIONS
MIN
TYP MAX UNIT
VGS=0 V, ID=250µA
VDS=30V, VGS=0V
VGS=±20 V
Reference to 25°C, ID=1mA
30
V
1
µA
±100 nA
V/°C
0.026
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=15A
1
3
12
25
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=20V, VGS=4.5V,
Gate Source Charge
QGS
ID=20A (Note 1)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=15V,
Turn-ON Rise Time
tR
RD=0.75Ω, ID=20A,
Turn-OFF Delay Time
tD(OFF)
RG=3.3Ω (Note 1)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 1)
VSD
IS=45A, VGS=0V
Reverse Recovery Time
tRR
IS=20A, VGS=0V,
dI/dt=100A/μs
Reverse Recovery Charge
QRR
Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%.
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1135
200
135
mΩ
pF
11.6
3.9
7
8.8
57.5
18.5
6.4
nC
ns
1.3
23.3
16
V
V
ns
nC
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TYPICAL CHARACTERISTICS
Typical Output Characteristics
125
TC=25℃
Drain Current,ID (A)
100
Typical Output Characteristics
90
10V
TC=150℃
8.0V
6.0V
75
5.0V
50
60
6.0V
5.0V
30
VG=4.0V
25
0
0
0
1
2
3
Drain to Source Voltage,VDS (V)
4
0
On-Resistance vs. Gate Voltage
80
2
ID=20A
TC=25℃
60
40
20
Normalized On-Resistance vs.
Junction Temperature
1.2
0.8
11
25
100
Junction Temperature,TJ (℃)
175
Reverse Drain Current, IS (A)
Gate Threshold Voltage,VGS(th) (V)
5
9
7
Gate-to-Source Voltage,VGS (V)
5
1.6
0.4
-50
0
3
1
2
3
4
Drain to Source Voltage,VDS (V)
ID=20A
VG=10V
Normalized, RDS(ON)
On-Resistance,RDS(ON) (mΩ)
10V
8.0V
Drain Current,ID (A)

Power MOSFET
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UT60T03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Response (RthJA)
Capacitance (pF)
Gate to Source Voltage,VGS (V)

Effective Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
0.01
Drain Current,ID (A)
t
T
0.02
Single Pulse
0.01
0.00001
1000
PDM
0.05
Duty factor=t/T
Peak TJ=PDM×RthJA+TC
0.0001
0.001
Pulse Width,t (s)
0.01
0.1
1
Maximum Safe Operating Area
100
100μs
1ms
10
TC=25℃
Single Pulse
10ms
100ms
DC
1
0.1
10
1
Drain-to-Source Voltage,VDS (V)
100
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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