UNISONIC TECHNOLOGIES CO., LTD UT60T03 Power MOSFET 30V, 45A N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT60T03 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. FEATURES * Very simple drive requirement * Very low gate charge * Fast switching SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT60T03L-TF3-T UT60T03G-TF3-T TO-220F UT60T03L-TF3-R UT60T03G-TF3-R TO-220F UT60T03L-TN3-R UT60T03G-TN3-R TO-252 UT60T03L-TQ2-R UT60T03G-TQ2-R TO-263 UT60T03L-TQ2-T UT60T03G-TQ2-T TO-263 UT60T03G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 G G G G G S 2 D D D D D S Pin Assignment 3 4 5 6 7 S S S S S S G D D D 8 D Packing Tube Tape Reel Tape Reel Tape Reel Tube Tape Reel 1 of 5 QW-R502-183.D UT60T03 Power MOSFET MARKING TO-220F / TO-252 / TO-262 DFN-8(5×6) PIN CONFIGURATION Source 1 8 Drain Gate 4 7 Drain Source 3 Source 3 6 Drain Source 2 Gate 4 5 Drain Source 1 Source 2 Top View Bottom View 5 Drain 6 Drain 7 Drain 8 Drain DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-183.D UT60T03 Power MOSFET ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) RATINGS UNIT 30 V ±20 V 45 A 120 A TO-220F 56 TO-252 44 Power Dissipation (TC=25°C) PD W TO-263 54 DFN-8(5×6) 21 Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +175 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2 .Pulse width limited by safe operating area. SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F TO-252 TO-263 DFN-8(5×6) TO-220F TO-252 TO-263 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 62 46 2.66 3.4 1.24 6 UNIT °C/W °C/W 3 of 7 QW-R502-183.D UT60T03 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Body Leakage Current IGSS Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance(Note 1) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT VGS=0 V, ID=250µA VDS=30V, VGS=0V VGS=±20 V Reference to 25°C, ID=1mA 30 V 1 µA ±100 nA V/°C 0.026 VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=15A 1 3 12 25 DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=20V, VGS=4.5V, Gate Source Charge QGS ID=20A (Note 1) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDS=15V, Turn-ON Rise Time tR RD=0.75Ω, ID=20A, Turn-OFF Delay Time tD(OFF) RG=3.3Ω (Note 1) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Forward On Voltage (Note 1) VSD IS=45A, VGS=0V Reverse Recovery Time tRR IS=20A, VGS=0V, dI/dt=100A/μs Reverse Recovery Charge QRR Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%. 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1135 200 135 mΩ pF 11.6 3.9 7 8.8 57.5 18.5 6.4 nC ns 1.3 23.3 16 V V ns nC 4 of 7 QW-R502-183.D UT60T03 TYPICAL CHARACTERISTICS Typical Output Characteristics 125 TC=25℃ Drain Current,ID (A) 100 Typical Output Characteristics 90 10V TC=150℃ 8.0V 6.0V 75 5.0V 50 60 6.0V 5.0V 30 VG=4.0V 25 0 0 0 1 2 3 Drain to Source Voltage,VDS (V) 4 0 On-Resistance vs. Gate Voltage 80 2 ID=20A TC=25℃ 60 40 20 Normalized On-Resistance vs. Junction Temperature 1.2 0.8 11 25 100 Junction Temperature,TJ (℃) 175 Reverse Drain Current, IS (A) Gate Threshold Voltage,VGS(th) (V) 5 9 7 Gate-to-Source Voltage,VGS (V) 5 1.6 0.4 -50 0 3 1 2 3 4 Drain to Source Voltage,VDS (V) ID=20A VG=10V Normalized, RDS(ON) On-Resistance,RDS(ON) (mΩ) 10V 8.0V Drain Current,ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-183.D UT60T03 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Normalized Thermal Response (RthJA) Capacitance (pF) Gate to Source Voltage,VGS (V) Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.01 Drain Current,ID (A) t T 0.02 Single Pulse 0.01 0.00001 1000 PDM 0.05 Duty factor=t/T Peak TJ=PDM×RthJA+TC 0.0001 0.001 Pulse Width,t (s) 0.01 0.1 1 Maximum Safe Operating Area 100 100μs 1ms 10 TC=25℃ Single Pulse 10ms 100ms DC 1 0.1 10 1 Drain-to-Source Voltage,VDS (V) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-183.D UT60T03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-183.D