Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3006
Power MOSFET
55A, 30V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET

DESCRIPTION
The UTC UT3006 is an N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON), cost-effectiveness and high switching speed.
This UTC UT3006 is suitable for DC/DC converters, etc.

FEATURES
* RDS(ON)<9mΩ @ VGS=10V, ID=30A
* High Switching Speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT3006L-TN3-R
UT3006G-TN3-R
TO-252
UT3006G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source

1
G
S
2
D
S
Pin Assignment
3 4 5 6 7
S S G D D D
8
D
Packing
Tape Reel
Tape Reel
MARKING
TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5×6)
1 of 4
QW-R502-636.C
UT3006

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
[email protected]
Drain Current
RATINGS
UNIT
30
V
±20
V
TC=25°C
55
A
ID
39
A
TC=100°C
160
A
Pulsed (Note 2)
IDM
TO-252
41
W
Power Dissipation (TC=25°C)
PD
DFN-8(5×6)
21
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
TO-252
DFN-8(5×6)
TO-252
DFN-8(5×6)
θJA
θJC
RATINGS
110
46
3
6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note)
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS=+20V
VDS=0V, VGS=-20V
30
VDS=VGS, ID=250µA
VGS=10V, ID=30A
VGS=4.5V, ID=20A
VDS=10V, ID=30A
1
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
VGS=4.5V, VDS=24V, ID=30A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Gate Resistance
RG
f=1.0MHz
Turn-ON Delay Time (Note)
tD(ON)
VDS=15V, ID=30A, RG=3.3Ω,
Rise Time
tR
VGS=10V, RD=0.5 Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=30A, VGS=0V
Body Diode Reverse Recovery Time (Note)
trr
IS=10A, VGS=0V,
dI/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
V
10
µA
+100 nA
-100 nA
3
9
16
42
V
mΩ
mΩ
S
700 1120
215
155
pF
pF
pF
13
2.5
9.5
1.9
8
85
20.5
10
21
nC
nC
nC
Ω
ns
ns
ns
ns
1.2
V
ns
µC
23
14
Note: Pulse test.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-636.C
UT3006

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on)
tr
td(off)
tf
Charge
Switching Time Waveform
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
Gate Charge Waveform
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QW-R502-636.C
UT3006
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-636.C