Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD606
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION

SOP-8
The UD606 can provide excellent RDS(ON) and low gate charge
by using advanced trench technology MOSFETs. The UD606 may
be used in H-bridge, inverters and other applications.
1
FEATURES

TO-252-5
* N-Channel: 40V/8A
RDS(ON) < 33mΩ @ VGS =10V, ID=8A
RDS(ON) < 55mΩ @ VGS= 4.5V, ID=6A
* P-Channel: -40V/-8A
RDS(ON) < 50mΩ @ VGS= -10V, ID=-8A
RDS(ON) < 70mΩ @ VGS= -4.5V, ID=-4A
* Super high dense cell design
* Reliable and rugged
SYMBOL

(3)
D1/D2
(5)
G2
(2)
G1
S1
(1)
N-Channel

S2
(4)
P-Channel
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UD606L-TN5-R
UD606G-TN5-R
UD606G-S08-R
Package
TO-252-5
SOP-8
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
S1
S1
Pin Assignment
2
3
4
5
6
7
8
G1 D1/D2 S2 G2 G1
S2
G2 D2 D2 D1 D1
Packing
Tape Reel
Tape Reel
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QW-R502-169.C
UD606

Power MOSFET
MARKING
TO-252-5
SOP-8
8
7
6
5
UTC
UD606G
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
3
4
Date Code
Lot Code
2 of 11
QW-R502-169.C
UD606

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
N-Channel:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
Power Dissipation
TC=25°C
TC=25°C
TO-252-5
SOP-8
SYMBOL
VDSS
VGSS
ID
IDM
PD
Junction Temperature
Storage Temperature
TJ
TSTG
RATINGS
40
±20
8
30
2
1.25
+175
-55 ~ +175
UNIT
V
V
A
A
W
W
°C
°C
RATINGS
-40
±20
-8
-30
2
1.25
2.5
UNIT
V
V
A
A
W
W
W
P-Channel:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
Power Dissipation
TC=25°C
TC=25°C
TO-252-5
SOP-8
SYMBOL
VDSS
VGSS
ID
IDM
PD
Power Dissipation
PD
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
N-Channel
Junction to Ambient
P-Channel
SYMBOL
TO-252-5
SOP-8
TO-252-5
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
MIN
TYP
50
70
40
68
MAX
60
100
50
100
UNIT
°C/W
°C/W
°C/W
°C/W
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UD606

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=32V, VGS=0V
VDS=0V, VGS=±20V
40
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=8A
VGS=4.5V, ID=6A
1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=20V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=20V, VGS=10V, RG=3Ω
ID=1A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=20V, VGS=10V, ID=8A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Diode Continuous Forward Current
IS
Reverse Recovery Time
tRR
IF=8A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
2.3
MAX UNIT
1
±100
V
uA
nA
3
33
55
V
mΩ
mΩ
580
100
87
pF
pF
pF
30
30
140
70
85
9
7
ns
ns
ns
ns
nC
nC
nC
0.76
22.9
18.3
1
8
V
A
ns
nC
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
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
-40
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-4A
-1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-20V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-20V, VGS=-10V,
RG=3Ω, RL=2.5Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=-20V, VGS=-10V, ID=-8A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Diode Continuous Forward Current
IS
Reverse Recovery Time
tRR
IF=-8A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5%.
3. Surface Mounted on 1in 2 pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
-1.8
35
55
MAX UNIT
-1
±100
V
uA
nA
-3
50
70
V
mΩ
mΩ
657
143
63
pF
pF
pF
8
12.2
24
12.5
14.1
2.2
4.1
ns
ns
ns
ns
nC
nC
nC
-0.75
23.2
18.2
-1
-8
V
A
ns
nC
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Power MOSFET
TYPICAL CHARACTERISTICS
N-CHANNEL
100
On-Resisitance vs. Gate-Source Voltage
1.0E+01
ID=8A
90
1.0E+00
80
60
1.0E-02
125℃
50
25℃
1.0E-03
40
25℃
1.0E-04
20
10
2
125℃
1.0E-01
70
30
Body-Diode Characteristics
6
4
8
Gate Source Voltage, VGS(V)
10
UNISONIC TECHNOLOGIES CO., LTD
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1.0E-05
0.0
0.6
0.8
0.2
0.4
1.0
Source Drain Voltage, VSD(V)
1.2
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TYPICAL CHARACTERISTICS(Cont.)
Power (W)
Drain Current, ID(A)

Power MOSFET
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
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
10
Normalized Maximum Transient Thermal Impedance
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,Single Pulse
1
D=TON/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=60℃/W
0.1
PD
Single Pulse
0.01
0.00001
0.0001
0.001
TON
T
0.01
0.1
1
10
100
Pulse Width (s)
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UD606

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
P-CHANNEL:
On-Resistance Characteristics
-10V
-6V
-5V
Drain Current, -ID(A)
25
-4.5V
VDS=-5V
20
VGS=-4V
15
10
-3.5V
20
15
10
125℃
25℃
5
5
0
Transient Characteristics
25
Drain Current, -ID(A)
30
-3V
0
1
2
3
4
Drain-Source Voltage, -VDS(V)
UNISONIC TECHNOLOGIES CO., LTD
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5
0
0
1
2
3
4
Gate-Source Voltage, -VGS(V)
5
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
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Single Pulse Power Rating Junction-toCase
Maximum Forward Biased Safe
Operating Area
100.0
200
TJ(mAX)=175℃ TA=25℃
10.0
160
10μs
RDS(ON)
Limited
TJ(mAX)=175℃
TA=25℃
120
100μs
1.0
DC
0.1
0.1
1
10
Drain-Source Voltage, -VDS(V)
1ms
100
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80
40
0
0.0001 0.001
0.01
0.1
Pulse Width (s)
1
0
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
TYPICAL CHARACTERISTICS(Cont.)
On-Resistance vs. Drain Current and
Gate Voltage
80
On-Resistance, RDS(ON)(mΩ)
Power MOSFET
70
VGS=-4.5V
60
50
40
VGS=-10V
30
20
0
4
8
12
16
Drain Current, -ID(A)
20
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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