Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT5003
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UT5003 can provide excellent RDS (ON) and low gate
charge by using UTC’s advanced trench technology. This device
is suitable for use as a load switch or in PWM applications.

FEATURES
* N-Channel: 30V, 7A
RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A
RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A
* P-Channel: -30V, -5A
RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A
RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A
* Super high dense cell design
* Reliable and rugged
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

UT5003G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
Pin Assignment
1
2
3
4
5
6
7
8
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-167.B
UT5003

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
N-Channel:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
Power Dissipation
Junction Temperature
Storage Temperature
TC=25°C
TC=25°C
SYMBOL
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RATINGS
30
±20
7
20
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
°C
°C
P-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
TC=25°C
ID
-5
A
Pulsed Drain Current (Note3)
TC=25°C
IDM
-20
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
V
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient (Note3)

SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
BVDSS
IDSS
IGSS
TEST CONDITIONS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH) VDS=VGS, ID=250uA
VGS=10V, ID=7A
RDS(ON)
VGS=4.5V, ID=6A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDS=10V, VGS=10V, ID≒1A,
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF) RG=3Ω
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=0.5*BVDSS, VGS=10V, ID=7A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Diode Continuous Forward Current
IS
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MIN
TYP
1.5
20.5
30
MAX UNIT
1
±100
V
uA
nA
2.5
27.5
40
V
mΩ
mΩ
680
105
75
4.6
4
20
5
14
1.9
3.3
pF
pF
pF
7
6
30
8
ns
ns
ns
ns
nC
nC
nC
1
1.3
V
A
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UT5003

Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
-1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-10V, VGS=-10V,
ID≒1A, RG=3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=0.5*BVDSS, VGS=-10V,
Gate-Source Charge
QGS
ID=-5A
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Diode Continuous Forward Current
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤ 2%.
3. Surface Mounted on 1in 2 pad area, t ≤ 10sec.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
-1.5
37.5
62
MAX UNIT
-1
±100
V
uA
nA
-2.5
45
80
V
mΩ
mΩ
780
145
79
7.7
5.7
20
9.5
15.1
2.1
4.0
pF
pF
pF
11.5
8.5
30
14
ns
ns
ns
ns
nC
nC
nC
-1
-1.3
V
A
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UT5003
Power MOSFET
TYPICAL CHARACTERISTICS

N-CHANNEL:
On-Region Characteristics
10V
25
Drain Current,ID (A)
2.4
6.0V
5.0V
4.5V
20
Normalized Drain-Source OnResistance,RDS(ON)
30
4V
15
3.5V
10
5
VGS=3V
2.0
4V
1.8
4.5V
1.6
5.0V
1.4
6.0V
1.2
7.0V
10V
1.0
1
4
2
3
Drain Source Voltage,VDS (V)
5
0
6
12
18
24
30
Drain Current,ID (A)
On-Resistance,RDS(ON) (Ω)
Transfer Characteristics
30
100
25
TA=-55℃
20
Reverse Drain Current,IS (A)
VDS=10V
Drain Current,ID (A)
VGS=3.5V
2.2
0.8
0
Normalized Drain-Source OnResistance,RDS(ON)
0
On-Resistance Variation with Drain
Current and Gate Voltage
25℃
15
125℃
10
5
0
Body Diode Forward Voltage Variation with
Source Current and Temperature
VGS=0V
TA=125℃
10
1
25℃
-55℃
0.1
0.01
0.001
1
1.5
2.0
2.5
3.0
Gate-to-Source Voltage,VGS (V)
3.5
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0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Body Diode Forward Voltage,VSD (V)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate Charge Characteristics
10
VDS=5V
ID=7A
Capacitance Characteristics
1000
10V
8
f=1MHZ
VGS=V
900
800
15V
CISS
700
6
600
500
400
4
300
200
2
COSS
100
0
0
4
8
12
Gate Charge,QG (nC)
1ms
10ms
100ms
100μs
1s
10s
1
DC
VGS=10V
Single Pulse
RθJA=135℃/W
TA=25℃
0.01
0.1
1
Peak Transient Power,P(PK) (W)
50
10
5
10
15
20
25
30
Drain-to-Source Voltage,VDS (V)
RDS(ON) Limit
Drain Current,ID (A)
0
16
Maximum Safe Operating Area
100
0.1
CRSS
0
Single Pulse Maximum Power
Dissipation
Single Pulse
RθJA=135℃/W
TA=25℃
40
30
20
10
0
10
0.001
100
Drain-Source Voltage,VDS (V)
0.01
0.1
1
10
Time,t1 (sec)
100
1000
Drain Current,-ID (A)
Normalized Drain-Source OnResistance,RDS(ON)
P-CHANNEL
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QW-R502-167.B
UT5003
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
On-Resistance Variation with
Temperature
Normalized Drain-Source OnResistance,RDS(ON)
1.6
ID=-5A
1.4
1.2
1.0
0.8
0.6
-50
TA=125℃
0.05
2
100
25℃
TA=-55℃
20
Reverse Drain Current,-IS (A)
25
15
125℃
10
5
8
4
6
Gate-to-Source Voltage,-VGS (V)
10
Body Diode Forward Voltage Variation with
Source Current and Temperature
VGS=0V
TA=125℃
10
1
25℃
-55℃
0.1
0.01
0.001
0
3.5
4.5
5.5
2.5
Gate-to-Source Voltage,-VGS (V)
Gate Charge Characteristics
10
25℃
0
VDS=-10V
Drain Current,-ID (A)
0.1
-25 0 25 50 75 100 125 150
Junction TemperaturemTJ (℃)
30
ID=-5A
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Body Diode Forward Voltage,-VSD (V)
Capacitance Characteristics
1200
VDS=-5V
-10V
8
f=1MHZ
VGS=V
1000
Capacitance,C (pF)
Gate Source Voltage,-VGS (V)
0.15
Transfer Characteristics
0
1.5
On-Resistance Variation with Gateto-Source Voltage
0.2
ID=-5A
VGS=-10V
On-Resistance,RDS(ON) (Ω)

-15V
6
4
CISS
800
600
400
COSS
2
200
CRSS
0
0
0
5
10
15
Gate Charge,QG (nC)
20
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0
5
10
20
15
Drain-to-Source Voltage,-VDS (V)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Safe Operating Area
100
50
Drain Current,-ID
(A)
RDS(ON) Limit
100μs
1ms
10
10ms
100ms
1s
10s
1
0.1
DC
VGS=-10V
Single Pulse
RθJA=135℃/W
TA=25℃
0.01
0.1
1
Peak Transient Power,P(PK) (W)

Single Pulse Maximum Power
Dissipation
Single Pulse
RθJA=135℃/W
TA=25℃
40
30
20
10
0
10
100
0.01
0.1
1
10
Time,t1 (sec)
100
1000
Normalized Effective Transient
Thermal Resistance,r (t)
Drain-Source Voltage,-VDS (V)
0.001
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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